V. V. Afanasev

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2005

2 Y. G. Fedorenko, L. Truong, V. V. Afanasev, A. Stesmans, Z. Zhang, Stephen A. Campbell: Impact of nitrogen incorporation on interface states in (100)Si/HfO₂. Microelectronics Reliability 45(5-6): 802-805 (2005)

1 L. Truong, Y. G. Fedorenko, V. V. Afanasev, A. Stesmans: Admittance spectroscopy of traps at the interfaces of (100)Si with Al₂O₃, ZrO₂, and HfO₂. Microelectronics Reliability 45(5-6): 823-826 (2005)

	2005
2		Y. G. Fedorenko, L. Truong, V. V. Afanasev, A. Stesmans, Z. Zhang, Stephen A. Campbell: Impact of nitrogen incorporation on interface states in (100)Si/HfO₂. Microelectronics Reliability 45(5-6): 802-805 (2005)
1		L. Truong, Y. G. Fedorenko, V. V. Afanasev, A. Stesmans: Admittance spectroscopy of traps at the interfaces of (100)Si with Al₂O₃, ZrO₂, and HfO₂. Microelectronics Reliability 45(5-6): 823-826 (2005)

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