William R. Bandy

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1998

2 Raymond S. Winton, William R. Bandy: A simple, continuous, analytical charge/capacitance model for the short-channel MOSFET. IEEE Trans. on CAD of Integrated Circuits and Systems 17(7): 631-638 (1998)

1996

1 William R. Bandy, Raymond S. Winton: A new approach for modeling the MOSFET using a simple, continuous analytical expression for drain conductance which includes velocity-saturation in a fundamental way. IEEE Trans. on CAD of Integrated Circuits and Systems 15(5): 475-483 (1996)

	1998
2		Raymond S. Winton, William R. Bandy: A simple, continuous, analytical charge/capacitance model for the short-channel MOSFET. IEEE Trans. on CAD of Integrated Circuits and Systems 17(7): 631-638 (1998)
	1996
1		William R. Bandy, Raymond S. Winton: A new approach for modeling the MOSFET using a simple, continuous analytical expression for drain conductance which includes velocity-saturation in a fundamental way. IEEE Trans. on CAD of Integrated Circuits and Systems 15(5): 475-483 (1996)

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