A. Bravaix

	2007
10		C. R. Parthasarathy, A. Bravaix, C. Guérin, M. Denais, V. Huard: Design-In Reliability for 90-65nm CMOS Nodes Submitted to Hot-Carriers and NBTI Degradation. PATMOS 2007: 191-200
	2006
9		C. R. Parthasarathy, M. Denais, V. Huard, G. Ribes, D. Roy, C. Guérin, F. Perrier, E. Vincent, A. Bravaix: Designing in reliability in advanced CMOS technologies. Microelectronics Reliability 46(9-11): 1464-1471 (2006)
	2005
8		V. Huard, M. Denais, F. Perrier, N. Revil, C. R. Parthasarathy, A. Bravaix, E. Vincent: A thorough investigation of MOSFETs NBTI degradation. Microelectronics Reliability 45(1): 83-98 (2005)
7		D. Goguenheim, A. Bravaix, S. Gomri, J. M. Moragues, C. Monserie, N. Legrand, P. Boivin: Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies. Microelectronics Reliability 45(3-4): 487-492 (2005)
6		C. Trapes, D. Goguenheim, A. Bravaix: Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides. Microelectronics Reliability 45(5-6): 883-886 (2005)
5		Yannick Rey-Tauriac, J. Badoc, B. Reynard, R. A. Bianchi, D. Lachenal, A. Bravaix: Hot-carrier reliability of 20V MOS transistors in 0.13 mum CMOS technology. Microelectronics Reliability 45(9-11): 1349-1354 (2005)
4		A. Bravaix, D. Goguenheim, M. Denais, V. Huard, C. R. Parthasarathy, F. Perrier, N. Revil, E. Vincent: Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. Microelectronics Reliability 45(9-11): 1370-1375 (2005)
	2004
3		A. Bravaix, D. Goguenheim, N. Revil, E. Vincent: Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides. Microelectronics Reliability 44(1): 65-77 (2004)
	2003
2		A. Bravaix, C. Trapes, D. Goguenheim, N. Revil, E. Vincent: Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies. Microelectronics Reliability 43(8): 1241-1246 (2003)
	2001
1		A. Bravaix, D. Goguenheim, N. Revil, E. Vincent: Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETs. Microelectronics Reliability 41(9-10): 1313-1318 (2001)

Coauthor Index

1	J. Badoc	[5]
2	R. A. Bianchi	[5]
3	P. Boivin	[7]
4	M. Denais	[4] [8] [9] [10]
5	D. Goguenheim	[1] [2] [3] [4] [6] [7]
6	S. Gomri	[7]
7	C. Guérin	[9] [10]
8	V. Huard	[4] [8] [9] [10]
9	D. Lachenal	[5]
10	N. Legrand	[7]
11	C. Monserie	[7]
12	J. M. Moragues	[7]
13	C. R. Parthasarathy	[4] [8] [9] [10]
14	F. Perrier	[4] [8] [9]
15	N. Revil	[1] [2] [3] [4] [8]
16	Yannick Rey-Tauriac	[5]
17	B. Reynard	[5]
18	G. Ribes	[9]
19	D. Roy	[9]
20	C. Trapes	[2] [6]
21	E. Vincent	[1] [2] [3] [4] [8] [9]

Colors in the list of coauthors