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 | 2002 | |
|---|---|---|
| 1 |      | Yongseok Ahn, Sanghyun Lee, Gwanhyeob Koh, Taeyoung Chung, Kinam Kim: The abnormality in gate oxide failure induced by stress-enhanced diffusion of polycrystalline silicon. Microelectronics Reliability 42(3): 349-354 (2002) |
| 1 | Yongseok Ahn | [1] |
| 2 | Taeyoung Chung | [1] |
| 3 | Kinam Kim | [1] |
| 4 | Sanghyun Lee | [1] |