 | 2009 |
| 11 |  | Ryosuke Inagaki,
Norio Sadachika,
Mitiko Miura-Mattausch,
Yasuaki Inoue:
A PN Junction-Current Model for Advanced MOSFET Technologies.
IEICE Transactions 92-A(4): 983-989 (2009) |
| 10 |  | Masataka Miyake,
Daisuke Hori,
Norio Sadachika,
Uwe Feldmann,
Mitiko Miura-Mattausch,
Hans Jürgen Mattausch,
Takahiro Iizuka,
Kazuya Matsuzawa,
Yasuyuki Sahara,
Teruhiko Hoshida,
Toshiro Tsukada:
Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation.
IEICE Transactions 92-C(5): 608-615 (2009) |
| 9 |  | Masataka Miyake,
Daisuke Hori,
Norio Sadachika,
Uwe Feldmann,
Mitiko Miura-Mattausch,
Hans Jürgen Mattausch,
Tatsuya Ohguro,
Takahiro Iizuka,
Masahiko Taguchi,
Shunsuke Miyamoto:
Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors.
IEICE Transactions 92-C(6): 777-784 (2009) |
| 2008 |
| 8 |  | Norio Sadachika,
Takahiro Murakami,
Hideki Oka,
Ryou Tanabe,
Hans Jürgen Mattausch,
Mitiko Miura-Mattausch:
Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization.
IEICE Transactions 91-C(8): 1379-1381 (2008) |
| 7 |  | Tatsuya Ezaki,
Dondee Navarro,
Youichi Takeda,
Norio Sadachika,
G. Suzuki,
Mitiko Miura-Mattausch,
Hans Jürgen Mattausch,
Tatsuya Ohguro,
Takahiro Iizuka,
Masahiko Taguchi,
Shigetaka Kumashiro,
Shunsuke Miyamoto:
Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations.
Mathematics and Computers in Simulation 79(4): 1096-1106 (2008) |
| 2007 |
| 6 |  | Yoshioki Isobe,
Kiyohito Hara,
Dondee Navarro,
Youichi Takeda,
Tatsuya Ezaki,
Mitiko Miura-Mattausch:
Shot Noise Modeling in Metal-Oxide-Semiconductor Field Effect Transistors under Sub-Threshold Condition.
IEICE Transactions 90-C(4): 885-894 (2007) |
| 2005 |
| 5 |  | Masahiro Murakawa,
Mitiko Miura-Mattausch,
Tetsuya Higuchi:
Towards automatic parameter extraction for surface-potential-based MOSFET models with the genetic algorithm.
ASP-DAC 2005: 204-207 |
| 4 |  | Shizunori Matsumoto,
Hiroaki Ueno,
Satoshi Hosokawa,
Toshihiko Kitamura,
Mitiko Miura-Mattausch,
Hans Jürgen Mattausch,
Tatsuya Ohguro,
Shigetaka Kumashiro,
Tetsuya Yamaguchi,
Kyoji Yamashita,
Noriaki Nakayama:
1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation.
IEICE Transactions 88-C(2): 247-254 (2005) |
| 3 |  | Dondee Navarro,
Takeshi Mizoguchi,
Masami Suetake,
Kazuya Hisamitsu,
Hiroaki Ueno,
Mitiko Miura-Mattausch,
Hans Jürgen Mattausch,
Shigetaka Kumashiro,
Tetsuya Yamaguchi,
Kyoji Yamashita,
Noriaki Nakayama:
A Compact Model of the Pinch-off Region of 100 nm MOSFETs Based on the Surface-Potential.
IEICE Transactions 88-C(5): 1079-1086 (2005) |
| 2004 |
| 2 |  | Mitiko Miura-Mattausch:
MOSFET modeling for RF-CMOS design.
ASP-DAC 2004: 482-490 |
| 1994 |
| 1 |  | Mitiko Miura-Mattausch:
Analytical MOSFET model for quarter micron technologies.
IEEE Trans. on CAD of Integrated Circuits and Systems 13(5): 610-615 (1994) |