| 2009 | ||
|---|---|---|
| 13 | Shunsuke Okumura, Yusuke Iguchi, Shusuke Yoshimoto, Hidehiro Fujiwara, Hiroki Noguchi, Koji Nii, Hiroshi Kawaguchi, Masahiko Yoshimoto: A 0.56-V 128kb 10T SRAM using column line assist (CLA) scheme. ISQED 2009: 659-663 | |
| 2008 | ||
| 12 | Hidehiro Fujiwara, Koji Nii, Hiroki Noguchi, Junichi Miyakoshi, Yuichiro Murachi, Yasuhiro Morita, Hiroshi Kawaguchi, Masahiko Yoshimoto: Novel Video Memory Reduces 45% of Bitline Power Using Majority Logic and Data-Bit Reordering. IEEE Trans. VLSI Syst. 16(6): 620-627 (2008) | |
| 11 | Hiroki Noguchi, Yusuke Iguchi, Hidehiro Fujiwara, Shunsuke Okumura, Yasuhiro Morita, Koji Nii, Hiroshi Kawaguchi, Masahiko Yoshimoto: A 10T Non-precharge Two-Port SRAM Reducing Readout Power for Video Processing. IEICE Transactions 91-C(4): 543-552 (2008) | |
| 10 | Masako Fujii, Koji Nii, Hiroshi Makino, Shigeki Ohbayashi, Motoshige Igarashi, Takeshi Kawamura, Miho Yokota, Nobuhiro Tsuda, Tomoaki Yoshizawa, Toshikazu Tsutsui, Naohiko Takeshita, Naofumi Murata, Tomohiro Tanaka, Takanari Fujiwara, Kyoko Asahina, Masakazu Okada, Kazuo Tomita, Masahiko Takeuchi, Shigehisa Yamamoto, Hiromitsu Sugimoto, Hirofumi Shinohara: A Large-Scale, Flip-Flop RAM Imitating a Logic LSI for Fast Development of Process Technology. IEICE Transactions 91-C(8): 1338-1347 (2008) | |
| 9 | Hirofumi Shinohara, Koji Nii, Hidetoshi Onodera: Analytical Model of Static Noise Margin in CMOS SRAM for Variation Consideration. IEICE Transactions 91-C(9): 1488-1500 (2008) | |
| 2007 | ||
| 8 | Hiroki Noguchi, Yusuke Iguchi, Hidehiro Fujiwara, Yasuhiro Morita, Koji Nii, Hiroshi Kawaguchi, Masahiko Yoshimoto: A 10T Non-Precharge Two-Port SRAM for 74% Power Reduction in Video Processing. ISVLSI 2007: 107-112 | |
| 7 | Yasuhiro Morita, Hidehiro Fujiwara, Hiroki Noguchi, Yusuke Iguchi, Koji Nii, Hiroshi Kawaguchi, Masahiko Yoshimoto: Area Comparison between 6T and 8T SRAM Cells in Dual-Vdd Scheme and DVS Scheme. IEICE Transactions 90-A(12): 2695-2702 (2007) | |
| 6 | Yasuhiro Morita, Hidehiro Fujiwara, Hiroki Noguchi, Yusuke Iguchi, Koji Nii, Hiroshi Kawaguchi, Masahiko Yoshimoto: Area Optimization in 6T and 8T SRAM Cells Considering Vth Variation in Future Processes. IEICE Transactions 90-C(10): 1949-1956 (2007) | |
| 2006 | ||
| 5 | Hidehiro Fujiwara, Koji Nii, Junichi Miyakoshi, Yuichiro Murachi, Yasuhiro Morita, Hiroshi Kawaguchi, Masahiko Yoshimoto: A two-port SRAM for real-time video processor saving 53% of bitline power with majority logic and data-bit reordering. ISLPED 2006: 61-66 | |
| 4 | Yasuhiro Morita, Hidehiro Fujiwara, Hiroki Noguchi, Kentaro Kawakami, Junichi Miyakoshi, Shinji Mikami, Koji Nii, Hiroshi Kawaguchi, Masahiko Yoshimoto: A 0.3-V Operating, Vth-Variation-Tolerant SRAM under DVS Environment for Memory-Rich SoC in 90-nm Technology Era and Beyond. IEICE Transactions 89-A(12): 3634-3641 (2006) | |
| 2005 | ||
| 3 | Yasumasa Tsukamoto, Koji Nii, Susumu Imaoka, Yuji Oda, Shigeki Ohbayashi, Tomoaki Yoshizawa, Hiroshi Makino, Koichiro Ishibashi, Hirofumi Shinohara: Worst-case analysis to obtain stable read/write DC margin of high density 6T-SRAM-array with local Vth variability. ICCAD 2005: 398-405 | |
| 2 | Niichi Itoh, Yasumasa Tsukamoto, Takeshi Shibagaki, Koji Nii, Hidehiro Takata, Hiroshi Makino: A 32×24-bit multiplier-accumulator with advanced rectangular styled Wallace-tree structure. ISCAS (1) 2005: 73-76 | |
| 1998 | ||
| 1 | Koji Nii, Hiroshi Makino, Yoshiki Tujihashi, Chikayoshi Morishima, Yasushi Hayakawa, Hiroyuki Nunogami, Takahiko Arakawa, Hisanori Hamano: A low power SRAM using auto-backgate-controlled MT-CMOS. ISLPED 1998: 293-298 | |