Joachim C. Reiner

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2005

4 Peter Jacob, Uwe Thiemann, Joachim C. Reiner: Electrostatic discharge directly to the chip surface, caused by automatic post-wafer processing. Microelectronics Reliability 45(7-8): 1174-1180 (2005)

2003

3 Joachim C. Reiner: Pre-breakdown leakage current fluctuations of thin gate oxide. Microelectronics Reliability 43(9-11): 1507-1512 (2003)

2002

2 Joachim C. Reiner, Philippe Gasser, Urs Sennhauser: Novel FIB-based sample preparation technique for TEM analysis of ultra-thin gate oxide breakdown. Microelectronics Reliability 42(9-11): 1753-1757 (2002)

2001

1 Joachim C. Reiner, Thomas Keller: Relevance of contact reliability in HBM-ESD test equipment. Microelectronics Reliability 41(9-10): 1397-1401 (2001)

	2005
4		Peter Jacob, Uwe Thiemann, Joachim C. Reiner: Electrostatic discharge directly to the chip surface, caused by automatic post-wafer processing. Microelectronics Reliability 45(7-8): 1174-1180 (2005)
	2003
3		Joachim C. Reiner: Pre-breakdown leakage current fluctuations of thin gate oxide. Microelectronics Reliability 43(9-11): 1507-1512 (2003)
	2002
2		Joachim C. Reiner, Philippe Gasser, Urs Sennhauser: Novel FIB-based sample preparation technique for TEM analysis of ultra-thin gate oxide breakdown. Microelectronics Reliability 42(9-11): 1753-1757 (2002)
	2001
1		Joachim C. Reiner, Thomas Keller: Relevance of contact reliability in HBM-ESD test equipment. Microelectronics Reliability 41(9-10): 1397-1401 (2001)

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