| 2008 | ||
|---|---|---|
| 2 | Simone Raoux, Geoffrey W. Burr, Matthew J. Breitwisch, Charles T. Rettner, Yi-Chou Chen, Robert M. Shelby, Martin Salinga, Daniel Krebs, Shih-Hung Chen, Hsiang-Lan Lung, Chung Hon Lam: Phase-change random access memory: A scalable technology. IBM Journal of Research and Development 52(4-5): 465-480 (2008) | |
| 1 | Siegfried F. Karg, G. Ingmar Meijer, J. Georg Bednorz, Charles T. Rettner, Alejandro G. Schrott, Eric A. Joseph, Chung Hon Lam, Markus Janousch, Urs Staub, Fabio LaMattina, Santos F. Alvarado, Daniel Widmer, Richard Stutz, Ute Drechsler, Daniele Caimi: Transition-metal-oxide-based resistance-change memories. IBM Journal of Research and Development 52(4-5): 481-492 (2008) | |