| 2008 | ||
|---|---|---|
| 1 | Tatsuya Ezaki, Dondee Navarro, Youichi Takeda, Norio Sadachika, G. Suzuki, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shigetaka Kumashiro, Shunsuke Miyamoto: Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations. Mathematics and Computers in Simulation 79(4): 1096-1106 (2008) | |