E. Vincent

	2008
16		Pierre Leveau, E. Vincent, G. Richard, Laurent Daudet: Instrument-Specific Harmonic Atoms for Mid-Level Music Representation. IEEE Transactions on Audio, Speech & Language Processing 16(1): 116-128 (2008)
	2006
15		C. R. Parthasarathy, M. Denais, V. Huard, G. Ribes, D. Roy, C. Guérin, F. Perrier, E. Vincent, A. Bravaix: Designing in reliability in advanced CMOS technologies. Microelectronics Reliability 46(9-11): 1464-1471 (2006)
	2005
14		V. Huard, M. Denais, F. Perrier, N. Revil, C. R. Parthasarathy, A. Bravaix, E. Vincent: A thorough investigation of MOSFETs NBTI degradation. Microelectronics Reliability 45(1): 83-98 (2005)
13		A. Bravaix, D. Goguenheim, M. Denais, V. Huard, C. R. Parthasarathy, F. Perrier, N. Revil, E. Vincent: Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. Microelectronics Reliability 45(9-11): 1370-1375 (2005)
	2004
12		A. Bravaix, D. Goguenheim, N. Revil, E. Vincent: Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides. Microelectronics Reliability 44(1): 65-77 (2004)
	2003
11		G. Ghibaudo, E. Vincent: Guest Editorial. Microelectronics Reliability 43(8): 1173 (2003)
10		F. Monsieur, E. Vincent, V. Huard, S. Bruyère, D. Roy, Thomas Skotnicki, G. Pananakakis, G. Ghibaudo: On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. Microelectronics Reliability 43(8): 1199-1202 (2003)
9		C. Besset, S. Bruyère, S. Blonkowski, S. Crémer, E. Vincent: MIM capacitance variation under electrical stress. Microelectronics Reliability 43(8): 1237-1240 (2003)
8		A. Bravaix, C. Trapes, D. Goguenheim, N. Revil, E. Vincent: Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies. Microelectronics Reliability 43(8): 1241-1246 (2003)
	2002
7		D. Roy, S. Bruyère, E. Vincent, F. Monsieur: Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement. Microelectronics Reliability 42(9-11): 1497-1500 (2002)
6		F. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo: Gate oxide Reliability assessment optimization. Microelectronics Reliability 42(9-11): 1505-1508 (2002)
	2001
5		S. Bruyère, D. Roy, E. Robilliart, E. Vincent, G. Ghibaudo: Body effect induced wear-out acceleration in ultra-thin oxides. Microelectronics Reliability 41(7): 1031-1034 (2001)
4		F. Monsieur, E. Vincent, G. Pananakakis, G. Ghibaudo: Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides. Microelectronics Reliability 41(7): 1035-1039 (2001)
3		F. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo: Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. Microelectronics Reliability 41(9-10): 1295-1300 (2001)
2		A. Bravaix, D. Goguenheim, N. Revil, E. Vincent: Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETs. Microelectronics Reliability 41(9-10): 1313-1318 (2001)
1		S. Bruyère, F. Monsieur, D. Roy, E. Vincent, G. Ghibaudo: Failures in ultrathin oxides: Stored energy or carrier energy driven? Microelectronics Reliability 41(9-10): 1367-1372 (2001)

Coauthor Index

1	C. Besset	[9]
2	S. Blonkowski	[9]
3	A. Bravaix	[2] [8] [12] [13] [14] [15]
4	S. Bruyère	[1] [3] [5] [6] [7] [9] [10]
5	S. Crémer	[9]
6	Laurent Daudet	[16]
7	M. Denais	[13] [14] [15]
8	G. Ghibaudo	[1] [3] [4] [5] [6] [10] [11]
9	D. Goguenheim	[2] [8] [12] [13]
10	C. Guérin	[15]
11	V. Huard	[10] [13] [14] [15]
12	Pierre Leveau	[16]
13	F. Monsieur	[1] [3] [4] [6] [7] [10]
14	G. Pananakakis	[3] [4] [6] [10]
15	C. R. Parthasarathy	[13] [14] [15]
16	F. Perrier	[13] [14] [15]
17	N. Revil	[2] [8] [12] [13] [14]
18	G. Ribes	[15]
19	G. Richard	[16]
20	E. Robilliart	[5]
21	D. Roy	[1] [3] [5] [6] [7] [10] [15]
22	Thomas Skotnicki	[10]
23	C. Trapes	[8]

Colors in the list of coauthors