 | 2009 |
|---|
| 8 |       | Ru Huang,
HanMing Wu,
JinFeng Kang,
DeYuan Xiao,
XueLong Shi,
Xia An,
Yu Tian,
RunSheng Wang,
LiangLiang Zhang,
Xing Zhang,
Yangyuan Wang:
Challenges of 22 nm and beyond CMOS technology.
Science in China Series F: Information Sciences 52(9): 1491-1533 (2009) |
| 2008 |
|---|
| 7 | | Yangyuan Wang,
Xing Zhang,
Xiaoyan Liu,
Ru Huang:
Novel devices and process for 32 nm CMOS technology and beyond.
Science in China Series F: Information Sciences 51(6): 743-755 (2008) |
| 2007 |
|---|
| 6 | | Teng Lin,
Jianhua Feng,
Yangyuan Wang:
A New Test Data Compression Scheme for Multi-scan Designs.
ISVLSI 2007: 179-185 |
| 2006 |
|---|
| 5 | | Jin He,
Xing Zhang,
Ganggang Zhang,
Mansun Chan,
Yangyuan Wang:
A Complete Carrier-Based Non-Charge-Sheet Analytic Theory for Nano-Scale Undoped Surrounding-Gate MOSFETs.
ISQED 2006: 115-120 |
| 4 | | Jin He,
Xing Zhang,
Ganggang Zhang,
Yangyuan Wang:
A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs.
ISQED 2006: 127-132 |
| 2003 |
|---|
| 3 | | Ru Huang,
Jinyan Wang,
Jin He,
Min Yu,
Xing Zhang,
Yangyuan Wang:
Hot carrier degradation behavior in SOI dynamic-threshold-voltage nMOSFET's (n-DTMOSFET) measured by gated-diode configuration.
Microelectronics Reliability 43(5): 707-711 (2003) |
| 2002 |
|---|
| 2 | | Jin He,
Xing Zhang,
Ru Huang,
Yangyuan Wang:
Application of forward gated-diode R-G current method in extracting F-N stress-induced interface traps in SOI NMOSFETs.
Microelectronics Reliability 42(1): 145-148 (2002) |
| 2001 |
|---|
| 1 | | Jin He,
Xing Zhang,
Ru Huang,
Yangyuan Wang:
Extraction of the lateral distribution of interface traps in MOSFETs by a novel combined gated-diode technique.
Microelectronics Reliability 41(12): 1953-1957 (2001) |
