Microelectronics Journal, Volume 39

Volume 39, Number 1, January 2008

• Ahra Lee, Hyoungho Ko, Dong-Il Cho, Gunn Hwang:
  Non-ideal behavior of a driving resonator loop in a vibratory capacitive microgyroscope. 1-6
  
• O. Saad, M. Baira, R. Ajjel, Hichem Maaref, B. Salem, G. Brémond, M. Gendry:
  Capacitance-voltage analysis of InAs quantum dots grown on InAlAs/InP(0 0 1). 7-11
  
• Peiqing Luo, Zhibin Zhou, Youjie Li, Shuquan Lin, Xiaoming Dou, Rongqiang Cui:
  Effects of deposition pressure on the microstructural and optoelectrical properties of B-doped hydrogenated nanocrystalline silicon (nc-Si: H) thin films grown by hot-wire chemical vapor deposition. 12-19
  
• X. H. Wang, X. L. Wang, C. Feng, C. B. Yang, B. Z. Wang, J. X. Ran, H. L. Xiao, C. M. Wang, J. X. Wang:
  Hydrogen sensors based on AlGaN/AlN/GaN HEMT. 20-23
  
• Yink Khai Teh, Faisal Mohd-Yasin, Florence Choong, Mamun Bin Ibne Reaz:
  Design of adaptive supply voltage for sub-threshold logic based on sub-1 V bandgap reference circuit. 24-29
  
• Mustafa Gök, Metin Mete Özbilen:
  Multi-functional floating-point MAF designs with dot product support. 30-43
  
• Yuehua Wu, Grigory Panaitov, Yi Zhang, Norbert Klein:
  Design and fabrication of in-plane resonant microcantilevers. 44-48
  
• Hongming Zhou, Guiguang Xiong:
  Exciton enhancement effect on the third harmonic generation in ZnS/CdSe quantum dot quantum well. 49-52
  
• Shuqi Zheng:
  Investigation of the degradation of smooth SiGe epitaxial layer on Si substrate. 53-56
  
• Jong-Seok Lee, Ey-Goo Kang, Man Young Sung:
  Shielding region effects on a trench gate IGBT. 57-62
  
• A. Aissat, S. Nacer, M. Bensebti, J. P. Vilcot:
  Investigation on the emission wavelength of GaInNAs/GaAs strained compressive quantum wells on GaAs substrates. 63-66
  
• Chih Chin Yang, Yan Kuin Su:
  Well-defined electrical properties of high-strain resonant interband tunneling structure. 67-69
  
• Shuti Li, Guanghan Fan, Huiqing Sun, Shuwen Zheng:
  The influence of thermal annealing to the characteristics of AlGaInP/GaInP multiple quantum wells light-emitting diode wafers. 70-73
  
• Fengchun Jiang, Congxin Xia, Shuyi Wei:
  Exciton states in wurtzite and zinc-blende InGaN/GaN coupled quantum dots. 74-79
  
• H. Benmaza, B. Akkal, Hamza Abid, J. M. Bluet, Macho Anani, Z. Bensaad:
  Barrier height inhomogeneities in a Ni/SiC-6H Schottky n-type diode. 80-84
  
• Shiguang Shang, Changchun Zhu, Weihua Liu:
  Enhanced field emission from printed CNTs by high-temperature sintering and plasma bombarding in hydrogen. 85-89
  
• Chih Chin Yang, Yan Kuin Su:
  High performance aluminum arsenic intraband resonant microwave devices. 90-93
  
• Ho Seob Kim, Seungjoon Ahn, Dae Wook Kim, Tae-Sik Oh, Seong Joon Ahn:
  Efficient electron beam condensing for low-energy microcolumn lithography. 94-98
  
• A. Hocini, T. Boumaza, M. Bouchemat, F. Royer, D. Jamon, J. J. Rousseau:
  Birefringence in magneto-optical rib waveguides made by SiO₂/TiO₂ doped with gamma-Fe₂O₃. 99-102
  
• Jordi Sacristán-Riquelme, Fredy Segura-Quijano, M. Teresa Osés:
  Simple and efficient inductive telemetry system with data and power transmission. 103-111
  
• Sang Hyun Park, Mikko Karppinen, Quan Le, Bin Young Yoon:
  Burst-mode optical transmitter with DC-coupled burst-enable signal for 2.5-Gb/s GPON system. 112-116
  
• Chua-Chin Wang, Chi-Chun Huang, Ching-Li Lee, Chien-Chih Hung, Li-Pin Lin:
  A single-chip CMOS IF-band converter design for DVB-T receivers. 117-129
  
• Chua-Chin Wang, Tzung-Je Lee, U. Fat Chio, Yu-Tzu Hsiao, Jia-Jin Chen:
  A 570-kbps ASK demodulator without external capacitors for low-frequency wireless bio-implants. 130-136
  
• Ramon Tortosa Navas, José Manuel de la Rosa, Francisco V. Fernández, Ángel Rodríguez-Vázquez:
  Clock jitter error in multi-bit continuous-time sigma-delta modulators with non-return-to-zero feedback waveform. 137-151
  
• Gustavo A. Ruiz, Mercedes Granda:
  Efficient implementation of 3X for radix-8 encoding. 152-159
  

Volume 39, Number 2, February 2008

• A. M. Ionescu, L. Diaz Olavarrieta:
  Editorial. 161-164
  
• I. Takesue, J. Haruyama, N. Kobayashi, S. Chiashi, S. Maruyama, Toshiki Sugai, Hisanori Shinohara:
  High-T_c superconductivity in entirely end-bonded multi-walled carbon nanotubes. 165-170
  
• Hiroshi Mizuta, Shunri Oda:
  Bottom-up approach to silicon nanoelectronics. 171-176
  
• Konstantin K. Likharev:
  CMOL: Second life for silicon. 177-183
  
• S. Dennler, M. C. Fromen, M. J. Casanove, G. M. Pastor, J. Morillo, J. Hafner:
  Towards atomic-scale design: A theoretical investigation of magnetic nanoparticles and ultrathin films. 184-189
  
• Mustapha Hamdi, Antoine Ferreira, Gaurav Sharma, Constantinos Mavroidis:
  Prototyping bio-nanorobots using molecular dynamics simulation and virtual reality. 190-201
  
• Valery A. Petrenko:
  Landscape phage as a molecular recognition interface for detection devices. 202-207
  
• Amitesh Maiti:
  Multiscale modeling with carbon nanotubes. 208-221
  
• J. Mizubayashi, J. Haruyama, I. Takesue, T. Okazaki, Hisanori Shinohara, Y. Harada, Y. Awano:
  Atom-like behaviors and orbital-related Tomonaga-Luttinger liquids in carbon nano-peapod quantum dots. 222-227
  
• H. C. Chiamori, J. W. Brown, E. V. Adhiprakasha, E. T. Hantsoo, J. B. Straalsund, N. A. Melosh, B. L. Pruitt:
  Suspension of nanoparticles in SU-8: Processing and characterization of nanocomposite polymers. 228-236
  
• A. Medvid', A. Mychko, P. Onufrievs:
  Self-organization of a 2D lattice on a surface of Ge single crystal after irradiation with Nd: YAG laser. 237-240
  
• Héctor Pettenghi, Maria J. Avedillo, José M. Quintana:
  Using multi-threshold threshold gates in RTD-based logic design: A case study. 241-247
  

• D. C. Kulkarni, S. P. Patil, Vijaya Puri:
  Properties of Ni_xZn_(1-x)Fe₂O₄ thick films at microwave frequencies. 248-252
  
• A. A. M. Farag, A. Ashery, F. S. Terra:
  Fabrication and electrical characterization of n-InSb on porous Si heterojunctions prepared by liquid phase epitaxy. 253-260
  
• Ali Jahanian, Morteza Saheb Zamani:
  Using metro-on-chip in physical design flow for congestion and routability improvement. 261-274
  
• Koushik K. Das, Ching-Te Chuang, Richard B. Brown:
  Reducing parasitic BJT effects in partially depleted SOI digital logic circuits. 275-285
  
• Matthias Völker, Johann Hauer, Josef Sauerer:
  Prospect of the future of switched-current circuits with regard to future CMOS technologies. 286-292
  
• Ebrahim Farshidi, Sayed Masoud Sayedi:
  A 1.2 V current-mode true RMS-DC converter based on the floating gate MOS translinear principle. 293-298
  

• J. Lee, M. Mayer, Y. Zhou, S. J. Hong:
  Erratum to "Iterative optimization of tail breaking force of 1 mil wire thermosonic ball bonding processes and the influence of plasma cleaning": [Microelectronics Journal 38 (2007) 842-847]. 299
  

Volume 39, Numbers 3-4, March - April 2008

• Mohamed Henini, Isaac Hernández-Calderón:
  Preface. 301
  
• M. Geller, F. Hopfer, Dieter Bimberg:
  Nanostructures for nanoelectronics: No potential for room temperature applications? 302-306
  
• R. A. Rupani, S. Ghosh, X. Su, P. Bhattacharya:
  Low frequency noise spectroscopy in InAs/GaAs resonant tunneling quantum dot infrared photodetectors. 307-313
  
• S. J. Chorley, C. G. Smith, F. Perez-Martinez, J. Prance, P. Atkinson, D. A. Ritchie, G. A. C. Jones:
  Single electron transport in a free-standing quantum dot. 314-317
  
• Marek Korkusinski, P. Hawrylak, M. Zielinski, W. Sheng, Gerhard Klimeck:
  Building semiconductor nanostructures atom by atom. 318-326
  
• H. Kobayashi, H. Kumano, M. Endo, M. Jo, I. Suemune, H. Sasakura, S. Adachi, S. Muto:
  Highly circular-polarized single photon generation from a single quantum dot at zero magnetic field. 327-330
  
• P. O. Holtz, E. S. Moskalenko, M. Larsson, K. F. Karlsson, W. V. Schoenfeld, P. M. Petroff:
  Effects of external fields on the excitonic emission from single InAs/GaAs quantum dots. 331-334
  
• R. Tsu:
  Revisiting tunneling via Si-quantum dots. 335-343
  
• I. Suemune, T. Akazaki, K. Tanaka, M. Jo, K. Uesugi, M. Endo, H. Kumano, E. Hanamura:
  Role of Cooper pairs for the generation of entangled photon pairs from single quantum dots. 344-347
  
• Z. Barticevic, M. Pacheco, C. A. Duque, L. E. Oliveira:
  Magnetoexciton states and diamagnetic shifts in GaAs-Ga_1-xAl_xAs quantum dots/ultrathin quantum wells under growth-direction magnetic fields. 348-350
  
• V. A. Elyukhin:
  On way to ideal quantum dots. 351-353
  
• R. Franco, J. Silva-Valencia, M. S. Figueira:
  Linear conductance through parallel coupled quantum dots. 354-358
  
• V. Mlinar, F. M. Peeters:
  Tuning of the optical properties of [11k] grown InAs quantum dots by the capping layer. 359-361
  
• Nathan Bickel, Patrick LiKamWa:
  Etched quantum dots for all-optical and electro-optical switches. 362-364
  
• M. D. Blumenthal, B. Kaestner, L. Li, S. Giblin, T. J. B. M. Janssen, M. Pepper, D. Anderson, G. Jones, D. A. Ritchie:
  Electron pumping through quantum dots defined in parallel etched quantum wires. 365-368
  
• Jong Chang Yi:
  Miniband properties of superlattice quantum dot arrays fabricated by the edge-defined nanowires. 369-374
  
• Karel Král:
  Non-delta-function electronic spectral densities in individual quantum dots. 375-377
  
• I. D. Mikhailov, L. F. García, J. H. Marín:
  Vertically coupled quantum dots charged by exciton. 378-382
  
• S. T. Perez-Merchancano, R. Franco, J. Silva-Valencia:
  Impurity states in a spherical GaAs-Ga_1-x Al_xAs quantum dots: Effects of hydrostatic pressure. 383-386
  
• Y. Valenzuela, R. Franco, J. Silva-Valencia:
  Lateral Fano resonance and Kondo effect in the strong coupling regime of a quantum dot embedded in a quantum wire. 387-389
  
• N. Porras-Montenegro, C. A. Perdomo-Leiva, E. Reyes-Gómez, H. S. Brandi, L. E. Oliveira:
  Effect of the Dresselhaus spin splitting on the effective Landé g-factor in GaAs-(Ga, Al)As quantum wells under in-plane or growth-direction magnetic fields. 390-393
  
• P. Pereyra, Arturo Robledo-Martinez, M. Morales-Luna:
  The effect of complex and negative indices in the transmission of electromagnetic waves through superlattices. 394-397
  
• L. E. Oliveira, M. de Dios-Leyva, C. A. Duque:
  Direct and indirect exciton states in GaAs-(Ga, Al)As double quantum wells under crossed electric and magnetic fields. 398-401
  
• F. J. Culchac, N. Porras-Montenegro, J. C. Granada, A. Latgé:
  Energy spectrum in a concentric double quantum ring of GaAs-(Ga, Al)As under applied magnetic fields. 402-406
  
• C. A. Duque, M. de Dios-Leyva, L. E. Oliveira:
  Exciton diamagnetic shift in GaAs/Ga_1-xAl_xAs quantum wells under in-plane magnetic fields. 407-410
  
• L. Smrcka, N. A. Goncharuk, P. Svoboda, P. Vasek, Yu. Krupko, W. Wegscheider:
  Electron magnetotransport in GaAs/AlGaAs superlattices with weak and strong inter-well coupling. 411-413
  
• X. A. Pichardo, V. M. González-Robles, S. J. Vlaev:
  Mean lifetimes of quasi-bound electronic states in rectangular GaAs/AlGaAs barriers. 414-417
  
• T. Kryshtab, J. A. Andraca, L. V. Borkovska, N. O. Korsunska, Ye. F. Venger, Yu. G. Sadofyev:
  Effect of CdTe monolayer insertion on CdZnTe/ZnTe quantum well characteristics. 418-422
  
• I. Rodríguez-Vargas, O. Y. Sánchez-Barbosa, D. A. Contreras-Solorio, S. J. Vlaev:
  Miniband structure of parabolic GaAs/Al_xGa_1-xAs superlattices. 423-426
  
• J. C. Salcedo-Reyes:
  Kinematic study of refraction properties of an opal-based photonic crystal. 427-430
  
• E. Tangarife, S. Y. López, M. de Dios-Leyva, L. E. Oliveira, C. A. Duque:
  Effects of hydrostatic pressure and crossed electric and magnetic fields on shallow-donor states in GaAs/Ga_1-xAl_xAs quantum wells. 431-434
  
• D. A. Contreras-Solorio, J. Madrigal-Melchor, S. Jelev-Vlaev, A. Enciso, H. Hernández-Cocoletzi:
  Study of the electronic fundamental transition of zincblende InN/InGaN quantum wells. 435-437
  
• I. Rodríguez-Vargas, M. E. Mora-Ramos, C. A. Duque:
  Influence of the hydrostatic pressure onto the electronic and transport properties of n-type double delta-doped GaAs quantum wells. 438-441
  
• S. Jelev-Vlaev, J. Madrigal-Melchor, V. M. González-Robles, D. A. Contreras-Solorio:
  Quasi-bound electronic states in parabolic GaAs/AlGaAs quantum wells and barriers. 442-446
  
• M. R. López, G. González de la Cruz:
  Dependence of the photoluminescence energy and carrier lifetime of the carrier density in nitride quantum well. 447-449
  
• S. M. Ramos-Arteaga, N. Porras-Montenegro, G. J. Vázquez, M. del Castillo-Mussot:
  Effects of geometry, applied hydrostatic pressure and magnetic field on the electron-hole transition energy in a GaAs-Ga_1-xAl_xAs pillbox immersed in a system of Ga_1-yAl_yAs. 450-454
  
• A. Chaves, J. Costa e Silva, J. A. K. Freire, G. A. Farias:
  The role of surface roughness on the electron confinement in semiconductor quantum rings. 455-458
  
• E. Moncada, F. Segovia, J. C. Granada:
  Effect of eccentricity and boundary conditions on the edge superconducting states in mesoscopic rings. 459-462
  
• P. C. M. Machado, F. A. P. Osório, A. N. Borges:
  Polaronic effects on the collective excitation energies in a quantum wire. 463-465
  
• Pablo Villamil, Carlos Cabra, N. Porras-Montenegro:
  Polaron effects on the energy of a hydrogenic donor impurity in GaAs-(Ga, Al)As quantum-well wires. 466-471
  
• Pedro Alfaro, Miguel Cruz, Chumin Wang:
  Vibrational states in low-dimensional structures: An application to silicon quantum wires. 472-474
  
• M. Rangus, M. Remskar, A. Mrzel:
  Preparation of vertically aligned bundles of Mo₆S_9-xI_x (4.5x<6) nanowires. 475-477
  
• Detlev Grützmacher, Li Zhang, Lixin Dong, Dominik J. Bell, Bradley J. Nelson, A. Prinz, Elisabeth Ruh:
  Ultra flexible SiGe/Si/Cr nanosprings. 478-481
  
• J. Torres, H. M. Martinez, J. E. Alfonso, L. D. López C:
  Optoelectronic study in porous silicon thin films. 482-484
  
• M. Brehm, T. Suzuki, Z. Zhong, T. Fromherz, J. Stangl, G. Hesser, S. Birner, F. Schäffler, G. Bauer:
  Bandstructure and photoluminescence of SiGe islands with controlled Ge concentration. 485-488
  
• G. García Salgado, R. Hernández, J. Martínez, T. Díaz, H. Juárez, E. Rosendo, R. Galeazzi, A. García, G. Juárez:
  Fabrication, characterization, and analysis of photodetectors metal-porous silicon with different geometry and thickness of the porous silicon layer. 489-493
  
• M. M. Rodriguez, J. M. Rivas, A. Díaz Cano, T. V. Torchynska, J. Palacios Gomez, G. G. Gasga, S. Jiménez Sandoval, M. Mynbaeva:
  Comparative investigation of optical and structural properties of porous SiC. 494-498
  
• Danilo R. Huanca, Francisco Javier Ramirez Fernandez, Walter J. Salcedo:
  Porous silicon optical cavity structure applied to high sensitivity organic solvent sensor. 499-506
  
• A. I. Diaz Cano, T. V. Torchynska, J. E. Urbina-Alvarez, G. R. Paredes Rubio, S. Jiménez Sandoval, Y. V. Vorobiev:
  Porous SiC layers on Si nanowire surface. 507-511
  
• Andreas Fissel, Apurba Laha, E. Bugiel, D. Kühne, M. Czernohorsky, Rytis Dargis, H. Jörg Osten:
  Silicon in functional epitaxial oxides: A new group of nanostructures. 512-517
  
• S. Novikov, J. Sinkkonen, T. Nikitin, L. Khriachtchev, M. Räsänen, E. Haimi:
  Free-standing SiO₂ films containing Si nanocrystals directly suitable for transmission electron microscopy. 518-522
  
• David Guzmán, Miguel Cruz, Chumin Wang:
  Electronic and optical properties of ordered porous germanium. 523-525
  
• Mi Jung, Seok Lee, Young Tae Byun, Young Min Jhon, Sun Ho Kim, Deok-Ha Woo, Sun-il Mho:
  Characteristics and fabrication of nanohole array on InP semiconductor substrate using nanoporous alumina. 526-528
  
• R. Segura, M. Flores, S. Hevia, P. Häberle:
  Synthesis, characterization and spectroscopy of carbon based nanoscale materials. 529-533
  
• J. Milton Pereira Jr., P. Vasilopoulos, F. M. Peeters:
  Resonant tunneling in graphene microstructures. 534-536
  
• L. Rosales, P. Orellana, Z. Barticevic, M. Pacheco:
  Transport properties of graphene nanoribbon heterostructures. 537-540
  
• T. H. Ghong, T. J. Kim, S. Y. Lee, Y. D. Kim, J. J. Kim, H. Makino, T. Yao:
  Vacuum UV spectroscopic ellipsometry study on Ga_1-xCr_xN(0<=x<=0.1) alloy films. 541-543
  
• O. Arnache, A. Hoffmann, D. Giratá:
  Effect of Fe doping on structural and magnetic properties of La_2/3Ca_1/3Mn_1-yFe_yO₃ (y=0-0.03) thin films. 544-547
  
• L. C. Moreno, D. Cadavid, J. E. Rodríguez:
  Thermoelectric power factor of LSCoO compounds. 548-550
  
• A. Martínez, J. Morales, P. Salas, C. Angeles-Chávez, L. A. Díaz-Torres, E. De la Rosa:
  Synthesis and photoluminescence of Y₂O₃: Yb³⁺-Er³⁺ nanofibers. 551-555
  
• O. Morán, E. Baca, F. A. Pérez:
  Depression of the superconducting critical temperature and finite-size scaling relation in YBa₂Cu₃O_7-delta/La_2/3Ca_1/3MnO₃ bilayers. 556-559
  
• B. Aguilar, O. Navarro, M. Avignon:
  Spin polarization in ordered and disordered double-perovskites. 560-562
  
• Miguel Grizalez, M. Jairo Arbey Rodríguez, Jesús Heiras, P. Prieto:
  Tb_0.5Bi_0.5MnO₃: New material. A DFT study. 563-565
  
• Min Kai Lee, E. V. Charnaya, Cheng Tien:
  Self-diffusion slowdown in liquid indium and gallium metals under nanoconfinement. 566-569
  
• Y. W. Jung, J. J. Yoon, J. S. Byun, Y. D. Kim:
  Dielectric function analysis of ZnSe and CdSe using parametric semiconductor model. 570-572
  
• F. A. P. Osório, R. B. de Almeida, A. N. Borges, P. C. M. Machado:
  Magnetopolaron effects on the donor states in InP. 573-575
  
• S. T. Pérez-Merchancano, G. E. Marques, L. E. Bolivar-Marinez:
  Optical transitions in new trends organic materials. 576-578
  
• G. Elizabeth Escorcia-Salas, J. Sierra-Ortega, Jairo Arbey Rodríguez M.:
  Influence of Zr concentration on crystalline structure and its electronic properties in the new Zr_xAl_1-xN compound in wurtzite phase: An ab initio study. 579-581
  
• A. E. Martínez-Cantón, Miguel García-Rocha, N. Garro, Isaac Hernández-Calderón, A. Cantarero, R. Ortega-Martínez:
  Study of the recombination around the excitonic region of MBE ZnSe: Cl thin films. 582-585
  
• C. Morales, H. Juárez, T. Díaz, Y. Matsumoto, E. Rosendo, G. Garcia, M. Rubin, F. Mora, M. Pacio, A. García:
  Low temperature SnO₂ films deposited by APCVD. 586-588
  
• L. V. Borkovska, N. Korsunska, V. Kladko, M. Slobodyan, O. Yefanov, Ye. F. Venger, T. Kryshtab, Yu. G. Sadofyev, I. Kazakov:
  A new type of structural defects in CdZnSe/ZnSe heterostructures. 589-593
  
• Adrián Alfaro-Martínez, Isaac Hernández-Calderón:
  Single-peak excitonic emission of CdSe ultra-thin quantum wells finished with fractional monolayers. 594-596
  
• M. F. O'Dwyer, R. A. Lewis, C. Zhang:
  Thermionic refrigeration in low-dimensional structures. 597-600
  
• A. G. U. Perera, G. Ariyawansa, P. V. V. Jayaweera, S. G. Matsik, M. Buchanan, H. C. Liu:
  Semiconductor terahertz detectors and absorption enhancement using plasmons. 601-606
  
• V. Semet, Vu Thien Binh, R. Tsu:
  Shaping electron field emission by ultrathin multilayered structure cathodes. 607-616
  
• Tim LaFave, Raphael Tsu:
  Capacitance: A property of nanoscale materials based on spatial symmetry of discrete electrons. 617-623
  
• N. V. Demarina, A. Lisauskas, H. G. Roskos:
  Electron ensemble coherence and terahertz radiation amplification in a cascade superlattice structure. 624-627
  
• M. Orlita, N. A. Goncharuk, R. Grill, L. Smrcka:
  Electron dynamics in superlattices subject to crossed magnetic and electric fields. 628-630
  
• Samson Mil'shtein, A. Churi, J. Palma:
  Bipolar transistor with quantum well base. 631-634
  
• H. Paredes Gutiérrez, S. T. Pérez-Merchancano, G. E. Marques:
  Spin effect on the resonant tunneling characteristics of a double-barrier heterostructures under longitudinal stresses. 635-637
  
• Lukasz Piskorski, Robert P. Sarzala, Wlodzimierz Nakwaski:
  Computer simulation of an operation of the GaInP/AlGaInP QW VCSELs: Excitation of various transverse LP_ij modes. 638-640
  
• Krzysztof Gutowski, Robert P. Sarzala, Wlodzimierz Nakwaski:
  Threshold analysis of highly detuned long-wavelength GaAs-based GaInNAsSb/GaNAsQWVCSELs. 641-643
  
• D. A. May-Arrioja, Patrick LiKamWa:
  Reconfigurable 1×4 InP-based optical switch. 644-647
  
• J. C. Martínez-Orozco, I. Rodríguez-Vargas, M. E. Mora-Ramos, C. A. Duque:
  Energy states in GaAs delta-doped field effect transistors under hydrostatic pressure. 648-650
  
• H. Juárez, T. Díaz, M. Pacio, C. Pacheco, E. Rosendo, G. García Salgado, M. Rubin, G. Romero, A. García, C. Morales:
  Analog switch device using a MOS structure. 651-655
  
• M. F. O'Dwyer, T. E. Humphrey, R. A. Lewis, C. Zhang:
  Electronic and thermal transport in hot carrier solar cells with low-dimensional contacts. 656-659
  
• D. A. May-Arrioja, Patrick LiKamWa, I. Shubin, P. K. L. Yu:
  Integrated InGaAsP MQW Mach-Zehnder modulator. 660-663
  
• V. Ovchinnikov:
  Formation and characterization of surface metal nanostructures with tunable optical properties. 664-668
  
• Samson Mil'shtein, Peter Ersland:
  Progress of quantum electronics and the future of wireless technologies. 669-673
  
• F. Perez-Martinez, K. D. Petersson, I. Farrer, D. Anderson, G. A. C. Jones, D. A. Ritchie, C. G. Smith:
  Realization of a GaAs/AlGaAs-based quantum cellular automata cell. 674-677
  
• J. Plaza Castillo, A. Torres-Jácome, O. Malik, N. Torres López:
  Very shallow boron junctions in Si by implantation and SOD diffusion obtained by RTP. 678-681
  
• Alberto Pretel, John H. Reina, William R. Aguirre-Contreras:
  Excitonic dynamics of a quantum dot coupled to a laser-driven semiconductor microcavity. 682-684
  
• I. A. Sukhoivanov, I. V. Guryev, J. A. Andrade Lucio, E. Alvarado Mendez, M. Trejo-Duran, M. Torres-Cisneros:
  Photonic density of states maps for design of photonic crystal devices. 685-689
  
• S. O. Yakushev, Oleksiy V. Shulika, S. I. Petrov, Igor A. Sukhoivanov:
  Chirp compression with single chirped mirrors and its assembly. 690-695
  
• John H. Reina, Adel Bririd:
  Path integral approach to dissipation in solid-state qubits. 696-698
  
• Gerardo A. Paz-Silva, John H. Reina:
  Characterizing total correlations in multipartite systems. 699-701
  

Volume 39, Number 5, May 2008

• Marco Pifferi, Fabio Ducati, Hans Brekelmans, Lorenzo Tripodi, Kostas Doris, Mattia Borgarino:
  A broadband RF 65 nm CMOS front-end for cable TV reception. 703-710
  
• Yan Sun, Ganhua Feng, George Georgiou, Edip Niver, Karen Noe, Ken Chin:
  Center embossed diaphragm design guidelines and Fabry-Perot diaphragm fiber optic sensor. 711-716
  
• Insoo Byun, Jooran Yang, Sekwang Park:
  Fabrication of a new micro bio chip and flow cell cytometry system using Bio-MEMS technology. 717-722
  
• Yanlong Meng, Wenfa Xie, Ning Zhang, Shufen Chen, Jiang Li, Wei Hu, Yi Zhao, Jingying Hou, Shiyong Liu:
  Effective hole-injection layer for non-doped inverted top-emitting organic light-emitting devices. 723-726
  
• Madnarski Sutikno, Uda Hashim, Zul Azhar Zahid Jamal:
  A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation. 727-731
  
• P. H. Yannakopoulos, A. P. Skountzos, M. Vesely:
  Influence of ionizing radiation in electronic and optoelectronic properties of III-V semiconductor compounds. 732-736
  
• G. E. Zardas, P. H. Yannakopoulos, Chrys I. Symeonides, Marián Veselý, P. C. Euthymiou:
  A study of electron transition in the energy gap of SI-GaAs with photoconductivity spectra and under alpha-particle irradiation. 737-739
  
• F. Diaz, Volodymyr Grimalsky, M. Tecpoyotl-Torres, J. Escobedo-Alatorre, S. Koshevaya:
  Excitation of hypersound in n-GaN films. 740-743
  
• Ching-Liang Dai, Pin-Hsu Kao, Yao-Wei Tai, Chyan-Chyi Wu:
  Micro FET pressure sensor manufactured using CMOS-MEMS technique. 744-749
  
• Jinghong Chen:
  A circuit-compatible analytical device model for ballistic nanowire transistors. 750-755
  
• M. Shavezipur, A. Khajepour, S. M. Hashemi:
  A novel linearly tunable butterfly-shape MEMS capacitor. 756-762
  
• Wei Fen Jiang, Long Yu Li, Shun Hua Xiao, Yong Fen Dong, Xin Jian Li:
  Study on the vacuum breakdown in field emission of a nest array of multi-walled carbon nanotube/silicon nanoporous pillar array. 763-767
  
• Antonela Dima, Francesco Della Corte, C. J. Williams, K. G. Watkins, G. Dearden, N. O'Hare, Maurizio Casalino, Ivo Rendina, Mihai O. Dima:
  Silicon nano-particles in SiO₂ sol-gel film for nano-crystal memory device applications. 768-770
  
• Jijun Xiong, Jian Wang, Wendong Zhang, Chenyang Xue, Binzhen Zhang, Jie Hu:
  Piezoresistive effect in GaAs/In_xGa_1-xAs/AlAs resonant tunneling diodes for application in micromechanical sensors. 771-776
  
• Lunchun Guo, Xiaoliang Wang, Cuimei Wang, Hongling Xiao, Junxue Ran, Weijun Luo, Xiaoyan Wang, Baozhu Wang, Cebao Fang, Guoxin Hu:
  The influence of 1 nm AlN interlayer on properties of the Al_0.3Ga_0.7N/AlN/GaN HEMT structure. 777-781
  
• Wenhui Lu, Hang Song, Yixin Jin, Haifeng Zhao, Zhiming Li, Hong Jiang, Guoqing Miao:
  Improved field emission characteristic of carbon nanotubes by an Ag micro-particle intermediation layer. 782-785
  
• Guozhu Wei, Sheng Wang, Guangyu Yi:
  Stark effect of electrons in semiconducting rectangular quantum boxes. 786-791
  
• S. Youssef, R. Al Asmar, J. Podlecki, M. Abdallah, D. Zaouk, A. Foucaran:
  Preliminary study on pyroelectric lithium tantalite by a novel electrostatic spray pyrolysis technique. 792-796
  
• Khizar-ul-Haq, M. A. Khan, U. S. Qurashi, Abdul Majid:
  Interaction of alpha radiation with iron-doped n-type silicon. 797-801
  
• Jing-Quan Liu, Hua-Bin Fang, Zheng-Yi Xu, Xin-Hui Mao, Xiu-Cheng Shen, Di Chen, Hang Liao, Bing-Chu Cai:
  A MEMS-based piezoelectric power generator array for vibration energy harvesting. 802-806
  
• Huizhao Zhuang, Shiying Zhang, Chengshan Xue, Baoli Li, Jiabing Shen, Dexiao Wang:
  Effect of ammoniating temperature on structural and morphologic properties of nanostructured GaN. 807-811
  
• C. Senthilpari, Ajay Kumar Singh, K. Diwakar:
  Design of a low-power, high performance, 8×8 bit multiplier using a Shannon-based adder cell. 812-821
  
• V. Girish, Jayadeva, Saeid Nooshabadi:
  Design methodology for configurable analog to digital conversion using support vector machines. 822-827
  
• R. Habchi, C. Salame, R. El Bitar, P. Mialhe:
  Switching times variation of MOSFET devices with temperature and high-field stress. 828-831
  
• Chua-Chin Wang, Chi-Chun Huang, Sheng-Lun Tseng:
  A low-power ADPLL using feedback DCO quarterly disabled in time domain. 832-840
  
• Ole Hirsch, Paul Alexander, Lynn F. Gladden:
  Techniques for cancellation of interfering multiple reflections in terahertz time-domain measurements. 841-848
  

Volume 39, Number 6, June 2008

• Vitezslav Benda:
  Power semiconductor devices and integrated circuits. 849-850
  
• V. Papez, B. Kojecký, D. Sámal:
  Reliability of reverse properties of power semiconductor devices: : Influence of surface dielectric layer and its experimental verification. 851-856
  
• S. Milady, D. Silber, Franz-Josef Niedernostheide, Hans Peter Felsl:
  Different types of avalanche-induced moving current filaments under the influence of doping inhomogeneities. 857-867
  
• Birk Heinze, Josef Lutz, Hans Peter Felsl, Hans-Joachim Schulze:
  Ruggedness analysis of 3.3 kV high voltage diodes considering various buffer structures and edge terminations. 868-877
  
• J. Vobecký, P. Hazdra:
  Dynamic avalanche in diodes with local lifetime control by means of palladium. 878-883
  
• J. Kozísek, Z. Machacek, V. Benda:
  Monitoring of carrier lifetime distribution in high power semiconductor device technology. 884-889
  
• V. Enea, D. Kroell, M. Messina, C. Ronsisvalle:
  Theoretical study about the RBSOA of a monolithic ESBT^® (emitter-switched bipolar transistor) versus the saturation level before the switching-off. 890-898
  
• Noel Y. A. Shammas, Ruchira Withanage, Dinesh Chamund:
  Optimisation of the number of IGBT devices in a series-parallel string. 899-907
  
• In-Hwan Ji, Min-Woo Ha, Young-Hwan Choi, Seung-Chul Lee, Chong-Man Yun, Min-Koo Han:
  A new fault current-sensing scheme for fast fault protection of the insulated gate bipolar transistor. 908-913
  
• L. Théolier, K. Isoird, H. Tranduc, F. Morancho, Jaume Roig, Yann Weber, Evgueniy N. Stefanov, Jean-Michel Reynes:
  Switching performance of 65 V vertical N-channel FLYMOSFETs. 914-921
  
• I. Cortés, P. Fernández-Martínez, D. Flores, Salvador Hidalgo, J. Rebollo:
  Superjunction LDMOS on thick-SOI technology for RF applications. 922-927
  

Volume 39, Number 7, July 2008

• Suresh V. Garimella, Amy S. Fleischer:
  Foreword. 929
  
• Raj Yavatkar, Murli Tirumala:
  Platform wide innovations to overcome thermal challenges. 930-941
  
• S. Kubota, A. Taguchi, K. Yazawa:
  Thermal challenges deriving from the advances of display technologies. 942-949
  
• A. Bulusu, D. G. Walker:
  One-dimensional thin-film phonon transport with generation. 950-956
  
• V. Bahadur, S. V. Garimella:
  Energy minimization-based analysis of electrowetting for microelectronics cooling applications. 957-965
  
• Herman Oprins, J. Danneels, B. Van Ham, Bart Vandevelde, Martine Baelmans:
  Convection heat transfer in electrostatic actuated liquid droplets for electronics cooling. 966-974
  
• Thomas Baummer, Edvin Cetegen, Michael Ohadi, Serguei Dessiatoun:
  Force-fed evaporation and condensation utilizing advanced micro-structured surfaces and micro-channels. 975-980
  
• Y. Ezzahri, G. Zeng, K. Fukutani, Z. Bian, A. Shakouri:
  A comparison of thin film microrefrigerators based on Si/SiGe superlattice and bulk SiGe. 981-991
  
• Rajiv Mongia, A. Bhattacharya, Himanshu Pokharna:
  Skin cooling and other challenges in future mobile form factor computing devices. 992-1000
  
• B. Holland, N. Ozman, R. A. Wirtz:
  Flow boiling of FC-72 from a screen laminate extended surface matrix. 1001-1007
  
• Peter E. Raad, Pavel L. Komarov, Mihai G. Burzo:
  Thermal characterization of embedded electronic features by an integrated system of CCD thermography and self-adaptive numerical modeling. 1008-1015
  
• A. Whelan, Y. Joshi, W. King:
  Improved compact thermal model for studying 3-D interconnect structures with low-k dielectrics. 1016-1022
  
• Sara McAllister, Van P. Carey, Amip Shah, Cullen Bash, Chandrakant D. Patel:
  Strategies for effective use of exergy-based modeling of data center thermal management systems. 1023-1029
  

Volume 39, Number 8, August 2008

• Bernard Courtois:
  European Nano Systems 2006. 1031
  
• Eleftherios Kolonis, Michael Nicolaidis:
  Towards a holistic CAD platform for nanotechnologies. 1032-1040
  
• Ferran Martorell, Antonio Rubio:
  Cell architecture for nanoelectronic design. 1041-1050
  
• Mustapha Hamdi, Antoine Ferreira:
  DNA nanorobotics. 1051-1059
  
• Paata J. Kervalishvili, Alexander Lagutin:
  Nanostructures, magnetic semiconductors and spintronics. 1060-1065
  
• F. Tafuri, A. Tagliacozzo, D. Born, D. Stornaiuolo, E. Gambale, D. Dalena, P. Lucignano, B. Jouault, F. Lombardi, A. Barone, B. L. Altshuler:
  Coherent quasiparticle transport in grain boundary junctions employing high-T_c superconductors. 1066-1069
  
• P. Hazdra, J. Voves, J. Oswald, K. Kuldová, A. Hospodková, Eduard Hulicius, Jirí Pangrác:
  Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots. 1070-1074
  

• Chyuan Haur Kao, C. S. Chen, C. H. Lee:
  Charge-trapping properties of poly-silicon oxides by rapid thermal N₂O process. 1075-1079
  
• Caizhen Zhang, Su Liu:
  Characteristics of beta-SiC/Si heterojunction with a SiGe buffer film. 1080-1082
  
• Jingye Xu, Vivek Nigam, Abinash Roy, Masud H. Chowdhury:
  Compound noise separation in digital circuits using blind source separation. 1083-1092
  
• Rajeshwary Tayade, Jacob A. Abraham:
  Small-delay defect detection in the presence of process variations. 1093-1100
  

Volume 39, Number 9, September 2008

• M. J. Rizvi, Chris Bailey, Hua Lu:
  Failure mechanisms of ACF joints under isothermal ageing. 1101-1107
  
• Weijun Luo, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Junxue Ran, Lunchun Guo, Jianping Li, Hongxin Liu, Yanling Chen, Fuhua Yang, Jinmin Li:
  Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD. 1108-1111
  
• Haogang Cai, Zhuoqing Yang, Guifu Ding, Xiaolin Zhao:
  Fabrication of a MEMS inertia switch on quartz substrate and evaluation of its threshold acceleration. 1112-1119
  
• Yanghai Gui, Shumian Li, Jiaqiang Xu, Chao Li:
  Study on TiO₂-doped ZnO thick film gas sensors enhanced by UV light at room temperature. 1120-1125
  
• Shi-Long Lv, Zhi-Tang Song, Song-Lin Feng:
  Fabrication of arrays of line with nanoscale width and large length by electron beam lithography with high-precision stage. 1126-1129
  
• Gilles Jacquemod, Lionel Geynet, Benjamin Nicolle, Emeric de Foucauld, William Tatinian, Pierre Vincent:
  Design and modelling of a multi-standard fractional PLL in CMOS/SOI technology. 1130-1139
  
• Jin Seok Yang, Jung Ho Park, Seong-Il Kim, Seo Young Kim, Yong Tae Kim, Il Ki Han:
  I-V characteristics of a methanol sensor for direct methanol fuel cell (DMFC) as a function of deposited platinum (Pt) thickness. 1140-1143
  
• Daniel J. Gargas, Donald J. Sirbuly, Michael D. Mason, Paul J. Carson, Steven K. Buratto:
  Investigation of polarization anisotropy in individual porous silicon nanoparticles. 1144-1148
  
• Na Gong, Baozeng Guo, Jianzhong Lou, Jinhui Wang:
  Analysis and optimization of leakage current characteristics in sub-65 nm dual V_t footed domino circuits. 1149-1155
  
• Fei Yuan, Tao Wang:
  CMOS current-mode integrating receivers for Gbytes/s parallel links. 1156-1165
  

Volume 39, Number 10, October 2008

• S. Mimouni, A. Saidane, A. Feradji:
  Transmission-line-matrix (TLM) modeling of self-heating in AlGaN/GaN transistor structures. 1167-1172
  
• Ali Cheknane, Hikmat S. Hilal, Fayçal Djeffal, Boumediène Benyoucef, Jean-Pierre Charles:
  An equivalent circuit approach to organic solar cell modelling. 1173-1180
  
• Manju K. Chattopadhyay, Sanjiv Tokekar:
  Thermal model for dc characteristics of algan/gan hemts including self-heating effect and non-linear polarization. 1181-1188
  
• Xiangbin Zeng, Huijuan Wang, Xiaowei Sun, Junfeng Li:
  Electric field-enhanced metal-induced lateral crystallization and P-channel poly-Si TFTs fabricated by it. 1189-1194
  
• Dongwoo Han, Sunghyun Kim, Sekwang Park:
  Two-dimensional ultrasonic anemometer using the directivity angle of an ultrasonic sensor. 1195-1199
  
• Tohru Suwa, Hamid Hadim:
  Multidisciplinary heat generating logic block placement optimization using genetic algorithm. 1200-1208
  
• Hervé F. Achigui, Mohamad Sawan, Christian Jesús B. Fayomi:
  A monolithic based NIRS front-end wireless sensor. 1209-1217
  

Volume 39, Number 11, November 2008

• Angela S. Camacho Beltran, Anderson Dussan Cuenca, Mohamed Henini:
  Preface. 1219
  
• H. Carrillo-Nuñez, Peter A. Schulz:
  Scrutinizing localization properties in heuristic models for DNA molecules: Localization lengths versus participation ratios. 1220-1221
  
• Carlos J. Paez, Peter A. Schulz:
  Delocalization of vibrational normal modes in double chains: Application to DNA systems. 1222-1223
  
• F. Fonseca, A. Franco:
  Study of complex charge distributions in an electrolyte using the Poisson-Boltzmann equation by lattice-Boltzmann method. 1224-1225
  
• B. Lassen, D. Barettin, Morten Willatzen, L. C. Lew Yan Voon:
  Piezoelectric models for semiconductor quantum dots. 1226-1228
  
• C. Parra, P. Häberle, M. D. Martins, Waldemar A. A. Macedo:
  Growth and morphology of ultra-thin Ni films on Pd(1 0 0). 1229-1230
  
• Shirley Gómez, William J. Herrera, Jesús V. Niño, Diego A. Manjarrés:
  Crossed Andreev reflection in superconducting junctions. 1231-1232
  
• L. Rosales, M. Pacheco, Z. Barticevic, P. Orellana:
  Conductance of Armchair GNRs with side-attached organic molecules. 1233-1235
  
• J. E. Rodríguez, D. Cadavid, L. C. Moreno:
  Thermoelectric figure of merit of LSCoO-Mn perovskites. 1236-1238
  
• A. León, Z. Barticevic, M. Pacheco:
  Electronic properties of nanoribbon junctions. 1239-1241
  
• M. Gómez, A. Rosales-Rivera, P. Pineda-Gómez, D. Muraca, H. Sirkin:
  Thermal, structural and magnetic characterization of Co-based alloys. 1242-1244
  
• J. A. Olarte, L. C. Moreno, A. Mariño:
  Susceptibility and EPR studies of LaMn_x-1Co_xO₃ synthesized by citrate precursor method. 1245-1247
  
• A. Pulzara-Mora, E. Cruz-Hernández, J. S. Rojas-Ramírez, V. H. Méndez-García, M. López-López:
  Structural and optical properties of InAs quantum dots grown by molecular beam epitaxy. 1248-1250
  
• J. F. Nossa, A. S. Camacho:
  Optical properties of supercrystals. 1251-1253
  
• J. D. Correa, Z. Barticevic, M. Pacheco:
  Magneto-absorption of donor impurities in quantum-well wires. 1254-1256
  
• A. Tortschanoff, E. Portuondo Campa, F. van Mourik, M. Chergui:
  Optical Kerr effect studies of the dynamics of confined water. 1257-1258
  
• J. Fernández P, L. Jaimes Osorio, C. Beltrán:
  Energy levels of on-axis donors in vertically stacked quantum dots with different morphologies. 1259-1260
  
• P. Aristizábal, R. L. Restrepo, W. Ospina, C. A. Duque:
  Hydrostatic pressure effects on the binding and transition energies for Wannier excitons in GaAs/Ga_1-xAl_xAs quantum wells. 1261-1263
  
• M. Zuluaga, A. Pardo, J. Torres, J. E. Alfonso:
  Influence of the laser power on the optical properties of MoO₃ thin films prepared by CO₂ laser evaporation. 1264-1265
  
• E. Vallejo:
  Lattice distortion in the one-dimensional double and super-exchange model. 1266-1267
  
• G. B. Orozco, J. C. Granada:
  Localized modes in superconductor-dielectric photonic crystals with broken translational symmetry. 1268-1269
  
• P. Garcés, A. Mariño, H. Sánchez:
  YBCO superconducting tapes by melt-annealing method on metallic Ni%5W substrates. 1270-1271
  
• F. E. López, E. Reyes-Gómez, L. E. Oliveira:
  Electron Landé g _|| factor in semiconductor quantum wires. 1272-1273
  
• O. Checa, E. Olaya, J. E. Diosa, R. A. Vargas:
  Effect of nanoparticles of Fe₂O₃ on the phase behavior of CsHSeO₄. 1274-1275
  
• M. Camargo, R. M. Gutiérrez:
  Quasi-analytical study of the energy levels in double quantum wells. 1276-1278
  
• C. A. Gómez, L. F. García, W. Gutiérrez, J. H. Marín:
  Ion-molecular D₂⁺ complex in a quantum ring. 1279-1280
  
• S. Calderón V, L. Escobar-Alarcón, Enrique Camps, S. Muhl, M. Rivera, I. Bentacourt, J. Olaya, A. Mariño:
  Structural, magnetic and magneto-electric properties of La_1-xSr_xMnO₃ thin films prepared by pulsed laser deposition. 1281-1283
  
• J. Hernández-Rosas, J. G. Mendoza-Álvarez, S. Gallardo-Hernández, E. Cruz-Hernández, J. S. Rojas-Ramírez, M. López-López:
  Optical characterization of InAs delta-layers grown by MBE at different substrate temperatures. 1284-1285
  
• Jesús D. González Acosta, Eduardo Orozco Ospino, Jose Barba Ortega:
  Effect of potential shape on the binding energy of the impurity states in nanotube. 1286-1288
  
• K. Hallberg, M. Nizama, J. d'Albuquerque e Castro:
  Impurities in elliptical quantum corrals. 1289-1291
  
• A. Dussan, R. H. Buitrago, R. R. Koropecki:
  Microcrystalline silicon thin films: A review of physical properties. 1292-1295
  
• H. Castro, G. Leibovitch, R. Beck, A. Kohen, Y. Dagan, G. Deutscher:
  Tunneling spectroscopy: A probe for high-Tc superconductivity. 1296-1299
  
• L. D. López-Carreño:
  Effect of fluctuations in reactant pressures on the bistability of CO oxidation on Pt surfaces. 1300-1301
  
• L. D. López-Carreño, O. L. Cortes-Bracho:
  Hausdorff dimension of adsorbate structures in CO oxidation on reduced size Pt-crystals. 1302-1303
  
• M. L. Ladrón de Guevara, G. A. Lara, P. A. Orellana:
  Electronic transport through two double quantum dot molecules embedded in an Aharonov-Bohm ring. 1304-1305
  
• M. López, H. Sánchez:
  Characterization of piezoelectric materials as a power source for electronic implantation devices. 1306-1307
  
• Miguel Grizalez, E. Martinez, J. Caicedo, Jesús Heiras, P. Prieto:
  Occurrence of ferroelectricity in epitaxial BiMnO₃ thin films. 1308-1310
  
• R. R. Rodríguez, G. A. Pérez Alcázar, H. Sánchez, J. M. Greneche:
  Milling time effects on the magnetic and structural properties of the Fe₇₀Si₃₀ system. 1311-1313
  
• C. E. Jácome, J. C. Giraldo:
  Thermoelectric power of SnO₂ anisotropic thin films. 1314-1315
  
• C. E. Jácome, J. C. Giraldo:
  Properties of ZnO thin films through percolation model. 1316-1317
  
• L. Alvarez Miño:
  Study of the fluctuation conductivity in YBCO thin film with low transition temperatures. 1318-1319
  
• L. C. Sánchez, A. M. Calle, J. D. Arboleda, J. Osorio, K. Nomura, C. A. Barrero:
  Fe-doped SnO₂ obtained by mechanical alloying. 1320-1321
  
• A. M. Calle, L. C. Sánchez, J. D. Arboleda, J. J. Beltrán, C. A. Barrero, J. Osorio, K. Nomura:
  Mixtures of iron and anatase TiO₂ by mechanical alloying. 1322-1323
  
• C. Calderón, P. Bartolo-Pérez, O. Rodríguez, G. Gordillo:
  Phase identification and XPS studies of Cu(In, Ga)Se₂ thin films. 1324-1326
  
• J. E. Alfonso, J. Buitrago, J. Torres, B. Santos, J. F. Marco:
  Crystallographic structure and surface composition of NbN_x thin films grown by RF magnetron sputtering. 1327-1328
  
• Carlos M. Garzón, José E. Alfonso, Edna C. Corredor, Abel A. Recco, André P. Tschiptschin:
  Hardness and structure characterization of Ti₆Al₄V films produced by reactive magnetron sputtering on a conventional austenitic stainless steel. 1329-1330
  
• Fernando Gordillo Delgado, Fabián Zárate Rincón, J. Aicardo Ortega Vela:
  Coffee certification criterion using the photoacoustic technique. 1331-1332
  
• Fernando Gordillo Delgado, Katherine Villa Gómez, Claudia Mejía Morales:
  Titanium dioxide nanocrystalline bactericidal thin films grown by sol-gel technique. 1333-1335
  
• S. Amaya-Roncancio, E. Restrepo-Parra:
  Finite elements modeling of multilayers of Cr/CrN. 1336-1338
  
• S. T. Pérez-Merchancano, H. Paredes Gutiérrez, G. E. Marques:
  Spin transport properties in double-barrier systems with diluted magnetic semiconductor doped layers. 1339-1340
  
• J. M. Florez, P. Vargas:
  Path integral study of phase transitions for thermons in macroscopic quantum tunneling. 1341-1343
  
• M. E. Fernández, J. E. Diosa, R. A. Vargas:
  Impedance spectroscopy studies of the polymer electrolyte based on poly(vinyl alcohol)-(NaI+4AgI)-H₂O. 1344-1346
  
• C. Vargas-Hernández, F. N. Jiménez-García, J. F. Jurado, V. Henao Granada:
  XRD, µ-Raman and optical absorption investigations of ZnO deposited by SILAR method. 1347-1348
  
• C. Vargas-Hernández, F. N. Jiménez-García, J. F. Jurado, V. Henao Granada:
  Comparison of ZnO thin films deposited by three different SILAR processes. 1349-1350
  
• G. Gordillo, M. Botero, J. S. Oyola:
  Synthesis and study of optical and structural properties of thin films based on new photovoltaic materials. 1351-1353
  
• H. M. Martinez, N. E. Rincon, J. Torres, J. E. Alfonso:
  Porous silicon thin film as CO sensor. 1354-1355
  
• H. Y. Valencia, L. C. Moreno, A. M. Ardila:
  Structural, electrical and optical analysis of ITO thin films prepared by sol-gel. 1356-1357
  
• C. Celedón, N. R. Arista, J. E. Valdés, P. Vargas:
  Threshold effect in the energy loss of hydrogen and helium ions transmitted in channeling conditions in gold single crystal. 1358-1359
  
• Juan P. Restrepo, Herbert Vinck-Posada, Boris A. Rodríguez:
  Wigner function and decoherence in a microcavity-Qdot system. 1360-1362
  
• L. M. Franco, J. A. Pérez, H. Riascos:
  Chemical analysis of CN_x thin films produced by pulsed laser ablation. 1363-1365
  
• R. Mejia-Salazar, N. Porras-Montenegro:
  Landé g-factor and cyclotron effective mass in a cylindrical GaAs-(Ga, Al)As quantum pillbox under the influence of an axis-parallel applied magnetic field. 1366-1367
  
• A. Ramírez-Porras:
  Flicker noise analysis of laminar voltage signals of porous silicon films. 1368-1370
  
• L. O. Prieto-López, F. Yubero, R. Machorro, W. De La Cruz:
  Optical properties of Zr and ZrO₂ films deposited by laser ablation. 1371-1373
  
• W. De La Cruz, C. Gallardo-Vega, S. Tougaard, L. Cota:
  Growth mechanism of iron nanoparticles on (0 0 0 1) sapphire wafers. 1374-1375
  
• J. A. Méndez-Bermúdez, F. M. Izrailev:
  Transverse localization in quasi-1D corrugated waveguides. 1376-1378
  
• O. A. Trujillo, H. A. Castillo, L. C. Agudelo, A. Devia:
  Chemical and morphological properties of (Ti-Zr)N thin films grown in an arc pulsed system. 1379-1381
  
• H. A. Castillo, A. Devia, G. Soto, J. A. Díaz, W. De La Cruz:
  Electron inelastic mean free path for B₄C and BC₂N determined by reflection electron energy loss spectroscopy. 1382-1384
  
• J. Galvis, H. Castro, E. Farber:
  Anomalous transport properties in superconducting overdoped YBCO thin films. 1385-1387
  
• G. A. Luna-Acosta, J. J. Reyes Salgado, J. A. Méndez-Bermúdez:
  Ondulating 2D waveguides. Dynamical and transport properties. 1388-1390
  
• J. D. Uribe, J. Osorio, C. A. Barrero, D. Giratá, A. L. Morales, A. Hoffmann:
  Physical properties in thin films of iron oxides. 1391-1393
  

Volume 39, Number 12, December 2008

• Mohamed H. Zaki, Sofiène Tahar, Guy Bois:
  Formal verification of analog and mixed signal designs: A survey. 1395-1404
  

• Gwiy-Sang Chung, Kang-San Kim:
  Raman scattering of polycrystalline 3C-SiC film deposited on AlN buffer layer by using CVD with HMDS. 1405-1407
  
• Gwiy-Sang Chung, Kyu-Hyung Yoon:
  Ohmic contacts to single-crystalline 3C-SiC films for extreme-environment MEMS applications. 1408-1412
  
• Gwiy-Sang Chung, Ki-Bong Han:
  H₂ carrier gas dependence of Young's modulus and hardness of chemical vapor deposited polycrystalline 3C-SiC thin films. 1413-1415
  
• Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Mridula Gupta, R. S. Gupta:
  Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency. 1416-1424
  
• M. Sahal, B. Hartiti, A. Ridah, M. Mollar, B. Marí:
  Structural, electrical and optical properties of ZnO thin films deposited by sol-gel method. 1425-1428
  
• Doron Abraham, Zeev Zalevsky, Avraham Chelly, Jossef Shappir, Michael Rosenbluh:
  Silicon on insulator photo-activated modulator. 1429-1432
  
• Monem Krichen, Abdelaziz Zouari, Adel Ben Arab:
  Effect of the interface states on the cell parameters of a thin film quasi-monocrystalline porous silicon as an active layer. 1433-1438
  
• R. Srnánek, G. Irmer, D. Donoval, J. Osvald, D. Mc Phail, A. Christoffi, B. Sciana, D. Radziewicz, M. Tlaczala:
  Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn delta-doped GaAs structures. 1439-1443
  
• T. S. Sathiaraj:
  Effect of annealing on the structural, optical and electrical properties of ITO films by RF sputtering under low vacuum level. 1444-1451
  
• Zhixiang Cai, Xiangyou Li, Qianwu Hu, Xiaoyan Zeng:
  Study on thick-film PTC thermistor fabricated by micro-pen direct writing. 1452-1456
  
• H. Touati, M. Souissi, Z. Chine, B. El Jani:
  Near-infrared photoluminescence of V-doped GaN. 1457-1460
  
• Aranggan Venkataratnam, Ashok K. Goel:
  Design and simulation of logic circuits with hybrid architectures of single-electron transistors and conventional MOS devices at room temperature. 1461-1468
  
• C. S. Yang:
  Quantum states of a hydrogenic donor impurity in a cubic quantum dot by the finite difference method. 1469-1471
  
• S. V. Jadhavand, Vijaya Puri:
  Microwave absorption and permittivity of polyaniline thin films using overlay technique. 1472-1475
  
• Fatemeh Kashfi, Sied Mehdi Fakhraie, Saeed Safari:
  Designing an ultra-high-speed multiply-accumulate structure. 1476-1484
  
• Gian-Franco Dalla Betta, S. Ronchin, A. Zoboli, N. Zorzi:
  High-performance PIN photodiodes on TMAH thinned silicon wafers. 1485-1490
  
• Valeria Garofalo:
  Fixed-width multipliers for the implementation of efficient digital FIR filters. 1491-1498
  
• M. D. Ganji, H. Aghaei, M. R. Gholami:
  Design of nanoswitch based on C₂₀-bowl molecules: A first principles study. 1499-1503
  
• B. D. Barkana:
  Characteristics of AlGaAs/GaAs heterostructure RT-SCR model. 1504-1508
  
• Zine Abid, Hayssam El-Razouk, D. A. El-Dib:
  Low power multipliers based on new hybrid full adders. 1509-1515
  
• S. T. Ahmad, D. G. Hasko:
  Broadband microwave spectroscopy of a GaAs point contact. 1516-1520
  
• M. Souissi, H. Touati, A. Fouzri, A. Bchetnia, B. El Jani:
  Effect of carrier gas on the surface morphology of V-doped GaN layers. 1521-1524
  
• Chunlin Zhang, Su Liu, Fangcong Wang, Yong Zhang:
  Improved property in organic light-emitting diode utilizing two Al/Alq₃ layers. 1525-1527
  
• M. Shavezipur, K. Ponnambalam, S. M. Hashemi, A. Khajepour:
  A probabilistic design optimization for MEMS tunable capacitors. 1528-1533
  
• S. Toofan, A. R. Rahmati, A. Abrishamifar, G. Roientan Lahiji:
  Low power and high gain current reuse LNA with modified input matching and inter-stage inductors. 1534-1537
  
• Ismail Saad, Razali Ismail:
  Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method. 1538-1541
  
• J. P. Cui, Y. Duan, X. F. Wang, Y. P. Zeng:
  Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy. 1542-1544
  
• M. Hemmous, A. Layadi, A. Guittoum, A. Bourzami, A. Benabbas:
  Effect of deposition rate and thickness on the structural and electrical properties of evaporated Ni/glass and Ni/Si(1 0 0) thin films. 1545-1549
  
• Georgy L. Pakhomov:
  Magnetron sputtered vs. thermally evaporated gold contacts in phthalocyanine-based thin film devices. 1550-1552
  
• Jin Seok Yang, Seong-Il Kim, Yong Tae Kim, Woon Jo Cho, Jung Ho Park:
  Electrical characteristics of nano-crystal Si particles for nano-floating gate memory. 1553-1555
  
• T. B. Wei, R. F. Duan, J. X. Wang, J. M. Li, Z. Q. Huo, Y. P. Zeng:
  Hillocks and hexagonal pits in a thick film grown by HVPE. 1556-1559
  
• Gwiy-Sang Chung, Chael-Han Kim:
  RTD characteristics for micro-thermal sensors. 1560-1563
  
• Jumril Yunas, Burhanuddin Yeop Majlis, Smeee:
  Comparative study of stack interwinding micro-transformers on silicon monolithic. 1564-1567
  
• Fen Qiao, Aimin Liu, Yi Xiao, Yang Ping Ou, Ji quan Zhang, Yong chang Sang:
  Enhanced photovoltaic characteristics of solar cells based on n-type triphenodioxazine derivative. 1568-1571
  
• Shang-Chou Chang, Tien-Chai Lin, To-Sing Li, Sheng-Han Huang:
  Carbon nanotubes grown from nickel catalyst pretreated with H₂/N₂ plasma. 1572-1575
  
• Jian-Duo Lu, Yang-Lai Hou, Zu-Zhao Xiong, Ting-Ping Hou, Ran Wei:
  The conductance and magnetoresistance effect in a periodically magnetically modulated nanostructure. 1576-1579
  
• Lei Zhang, Bifeng Cui, Weiling Guo, Zhiqun Wang, Guangdi Shen:
  High-power transverse micro-stack weakly coupled laser diode bars. 1580-1582
  
• Zengliang Shi, Dali Liu, Xiaolong Yan, Zhongmin Gao, Shiying Bai:
  Effect of oxygen partial pressure on conductivity type of MgZnO nanocrystalline thin films prepared by metal-organic chemical vapor deposition. 1583-1586
  
• M. M. Habchi, A. Rebey, B. El Jani:
  AP-MOVPE of InGaAs on GaAs (0 0 1): Analysis of in situ reflectivity response. 1587-1593
  
• Fortunato Pezzimenti, Francesco G. Della Corte, Roberta Nipoti:
  Experimental characterization and numerical analysis of the 4H-SiC p-i-n diodes static and transient behaviour. 1594-1599
  
• Te-Hua Fang, Tong Hong Wang, Deng-Maw Lu, Wen-Chieh Lien:
  Structural characteristics of carbon nanostructures synthesized by ECR-CVD. 1600-1604
  
• R. Srnánek, G. Irmer, D. Donoval, A. Vincze, B. Sciana, D. Radziewicz, M. Tlaczala:
  Quantitative analysis of doping profile on beveled p-type GaAs structures by micro-Raman spectroscopy. 1605-1612
  
• Thomas Tsiolakis, Nikos Konofaos, G. Ph. Alexiou:
  Design, simulation and performance evaluation of a single-electron 2-4 decoder. 1613-1621
  
• Mingjun Liu, Ping Chen, Qin Xue, Fangfang Jiang, Guohua Xie, Jingying Hou, Yi Zhao, Liying Zhang, Bin Li:
  Influence of connecting units' thicknesses on tandem organic devices' performances. 1622-1625
  
• Jozef Kákos, Milan Mikula, Ladislav Harmatha:
  Ultrathin insulating silica layers prepared from adsorbed TEOS, H₂O and NH₃ as a catalyst. 1626-1628
  
• Hui-Zhao Zhuang, Bao-Li Li, Cheng-Shan Xue, Xiao-kai Zhang, Shi-Ying Zhang, De-Xiao Wang, Jia-Bing Shen:
  Growth of Nb-catalysed GaN nanowires. 1629-1633
  
• Rajesh K. Tyagi, Anil Ahlawat, Manoj Pandey, Sujata Pandey:
  A new two-dimensional C-V model for prediction of maximum frequency of oscillation (f_max) of deep submicron AlGaN/GaN HEMT for microwave and millimeter wave applications. 1634-1641
  
• Jesús Arias, Luis Quintanilla, Lourdes Enríquez, Jesús M. Hernández-Mangas, José Vicente, Jokin Segundo:
  A 1-GHz, multibit, continuous-time, delta-sigma ADC for Gigabit Ethernet. 1642-1648
  
• Sh. M. Eladl:
  Analysis of interface recombination and self-absorption effect on the performance of QWIP-HBT-LED integrated device. 1649-1653
  
• Zhihong Chen, Duanzheng Yao, Xi Zhang, Tianhong Fang:
  Polaron effect-dependent third-order optical susceptibility in a ZnS/CdSe quantum dot quantum well. 1654-1658
  
• A. Arena, N. Donato, G. Saitta, S. Galvagno, C. Milone, A. Pistone:
  Photovoltaic properties of multi-walled carbon nanotubes deposited on n-doped silicon. 1659-1662
  
• Rodrigo Trevisoli Doria, Antonio Cerdeira, Jean-Pierre Raskin, Denis Flandre, Marcelo Antonio Pavanello:
  Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation. 1663-1670
  
• Nayan Patel, A. Ramesha, Santanu Mahapatra:
  Drive current boosting of n-type tunnel FET with strained SiGe layer at source. 1671-1677
  
• Qi Wang, Xiaomin Ren, Feihua Wang, Jianyou Feng, Jihe Lv, Jing Zhou, Shiwei Cai, Hui Huang, Yongqing Huang:
  LP-MOCVD growth of ternary B_xGa_1-xAs epilayers on (0 0 1)GaAs substrates using TEB, TMGa and AsH₃. 1678-1682
  
• Liang Shen, Wenbin Guo, Zhicheng Zhong, Guohui Zhu, Chen Tao, Ziran Liu, Jingran Zhou, Weiyou Chen:
  Water-soluble poly(3, 4-ethylenedioxythiophene)/nano-crystalline TiO₂ heterojunction solar cells. 1683-1686
  
• Hwann-Kaeo Chiou, Hsien-Jui Chen, Hsien-Yuan Liao, Shuw-Guann Lin, Yin-Cheng Chang:
  Design formula for band-switching capacitor array in wide tuning range low-phase-noise LC-VCO. 1687-1692
  
• Ashis Kumer Biswas, Md. Mahmudul Hasan, Ahsan Raja Chowdhury, Hafiz Md. Hasan Babu:
  Efficient approaches for designing reversible Binary Coded Decimal adders. 1693-1703
  
• Jingbo Shao, Guangsheng Ma, Zhi Yang, Ruixue Zhang:
  Test response reuse-based SoC core test compression and test scheduling for test application time minimization. 1704-1709
  
• Weijun Luo, Xiaoliang Wang, Lunchun Guo, Hongling Xiao, Cuimei Wang, Junxue Ran, Jianping Li, Jinmin Li:
  Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(1 1 1) by MOCVD. 1710-1713
  
• Ranjith Kumar, Volkan Kursun:
  Temperature-adaptive voltage tuning for enhanced energy efficiency in ultra-low-voltage circuits. 1714-1727
  
• Ali Alaeldine, Nicolas Lacrampe, Alexandre Boyer, Richard Perdriau, Fabrice Caignet, Mohammed Ramdani, Etienne Sicard, M'hamed Drissi:
  Comparison among emission and susceptibility reduction techniques for electromagnetic interference in digital integrated circuits. 1728-1735
  
• Francesco Marraccini, Giuseppe de Vita, Stefano Di Pascoli, Giuseppe Iannaccone:
  Low-voltage nanopower clock generator for RFID applications. 1736-1739
  
• Jani Miettinen, Ville Pekkanen, Kimmo Kaija, Pauliina Mansikkamäki, Juha Mäntysalo, Matti Mäntysalo, Juha Niittynen, Jussi Pekkanen, Taavi Saviauk, Risto Rönkkä:
  Inkjet printed System-in-Package design and manufacturing. 1740-1750
  
• Soodeh Aghli Moghaddam, Nasser Masoumi:
  Analysis and simulation of a novel gradually low-K dielectric structure for crosstalk reduction in VLSI. 1751-1760
  
• Bo Liu, Jing Lu, Yan Wang, Yang Tang:
  An effective parameter extraction method based on memetic differential evolution algorithm. 1761-1769
  
• Ankit Kashyap, R. K. Chauhan:
  Effect of Ge profile design on the performance of an n-p-n SiGe HBT-based analog circuit. 1770-1773
  
• Paolo Stefano Crovetti, Franco L. Fiori:
  Efficient BEM-based substrate network extraction in silicon SoCs. 1774-1784
  
• Hui Zhang, Yang Zhao, Alex Doboli:
  A scalable sigma-space based methodology for modeling process parameter variations in analog circuits. 1785-1796
  
• Maziar Goudarzi, Tohru Ishihara, Hiroto Yasuura:
  A software technique to improve lifetime of caches containing ultra-leaky SRAM cells caused by within-die V_th variation. 1797-1808
  
• Hussam Al-Hertani, Dhamin Al-Khalili, Come Rozon:
  UDSM subthreshold leakage model for NMOS transistor stacks. 1809-1816
  
• Stéphane Badel, Alexandre Schmid, Yusuf Leblebici:
  CMOS realization of two-dimensional mixed analog-digital Hamming distance discriminator circuits for real-time imaging applications. 1817-1828
  
• Wei He, Zheng-xuan Zhang, En-xia Zhang, Wen-jie Yu, Hao Tian, Xi Wang:
  Practical considerations in the design of SRAM cells on SOI. 1829-1833
  
• B. K. Kaushik, S. Sarkar:
  Crosstalk analysis for a CMOS gate driven inductively and capacitively coupled interconnects. 1834-1842
  
• M. Jalali, A. Nabavi, Mohammad Kazem Moravvej-Farshi, A. Fotowat-Ahmady:
  Low-noise differential transimpedance amplifier structure based on capacitor cross-coupled g_m-boosting scheme. 1843-1851
  
• V. Boscaino, P. Livreri, F. Marino, M. Minieri:
  Current-sensing technique for current-mode controlled voltage regulator modules. 1852-1859
  
• Nam-Jin Oh:
  A low-noise mixer with an image-reject notch filter for 2.4 GHz applications. 1860-1866
  
• Luis H. C. Ferreira, Tales Cleber Pimenta, Robson L. Moreno:
  A CMOS threshold voltage reference source for very-low-voltage applications. 1867-1873
  
• Guoyi Yu, Xuecheng Zou:
  A novel current reference based on subthreshold MOSFETs with high PSRR. 1874-1879
  
• Taikyeong T. Jeong:
  Implementation of low power adder design and analysis based on power reduction technique. 1880-1886
  

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