Microelectronics Journal, Volume 40

Volume 40, Number 1, January 2009

• R. Mahamdi, Laurent Saci, F. Mansour, Pierre Temple-Boyer, E. Scheid, Laurent Jalabert:
  Boron diffusion and activation in polysilicon multilayer films for P⁺ MOS structure: Characterization and modeling. 1-4
  
• Zahra Arefinia, Ali A. Orouji:
  Novel attributes in scaling issues of carbon nanotube field-effect transistors. 5-9
  
• A. Aissat, S. Nacer, M. Bensebti, J. P. Vilcot:
  Low sensitivity to temperature compressive-strained structure quantum well laser Ga_1-xIn_xAs_1-yN_y/GaAs. 10-14
  
• Da Chen, Jingjing Wang, Dong Xu, Yafei Zhang:
  The influence of the AlN film texture on the wet chemical etching. 15-19
  
• Andrea De Marcellis, Giuseppe Ferri, Nicola Carlo Guerrini, Giuseppe Scotti, Vincenzo Stornelli, Alessandro Trifiletti:
  A novel low-voltage low-power fully differential voltage and current gained CCII for floating impedance simulations. 20-25
  
• Y. C. Gerstenmaier, W. Kiffe, Gerhard K. M. Wachutka:
  Combination of thermal subsystems by use of rapid circuit transformation and extended two-port theory. 26-34
  
• Hogyoung Kim:
  Al contacts to nanoroughened p-GaN. 35-38
  
• Xinquan Lai, Ziyou Xu, Yanming Li, Qiang Ye, Maoli Man:
  A CMOS piecewise curvature-compensated voltage reference. 39-45
  
• Chien-Chan Su:
  Carbon nanotube tips for surface characterization: Fabrication and properties. 46-49
  
• Tung-Te Chu, Huilin Jiang, Liang-Wen Ji, Wei-Shun Shih, Jingchang Zhong, Ming-Jie Zhuang:
  Grain size effect of nanocrystalline ZnO on characteristics of dye-sensitized solar cells. 50-52
  
• Terry Yuan-Fang Chen, Haw-Long Lee:
  Damping vibration of scanning near-field optical microscope probe using the Timoshenko beam model. 53-57
  
• Qiu-lin Tan, Wendong Zhang, Chenyang Xue, Jijun Xiong, Jun Liu, Jun-hong Li, Ting Liang:
  Design, fabrication and characterization of pyroelectric thin film and its application for infrared gas sensors. 58-62
  
• Jungjin Yang, C. K. Suman, Changhee Lee:
  Effect of type-II quantum well of m-MTDATA/alpha-NPD on the performance of green organic light-emitting diodes. 63-65
  
• Luís da Silva Zambom, Ronaldo Domingues Mansano, Ana Paula Mousinho:
  Low-temperature deposition of silicon oxide and silicon nitride by reactive magnetron sputtering. 66-69
  
• Kun Cao, Zhanguo Chen, Ce Ren, Gang Jia, Tiechen Zhang, Xiuhuan Liu, Bao Shi, Jianxun Zhao:
  Measurement of second-order nonlinear optical susceptibility of cBN crystal synthesized at high pressure and high temperature. 70-73
  
• O. Maksimov:
  Structural and optical properties of the polycrystalline ZnO films synthesized via oxidative annealing of ZnSe/YSZ heterostructures. 74-77
  
• Lijun Tang, Kairui Zhang, Shang Chen, Guojun Zhang, Guowen Liu:
  MEMS inclinometer based on a novel piezoresistor structure. 78-82
  
• Cuiping Jia, Jingran Zhou, Wei Dong, Weiyou Chen:
  Design and fabrication of silicon-based 8×8 MEMS optical switch array. 83-86
  
• Qi Wang, Xiaomin Ren, Hui Huang, Yongqing Huang, Shiwei Cai:
  Growth of B_xGa_1-xAs, B_xAl_1-xAs and B_xGa_1-x-yIn_yAs epilayers on (0 0 1)GaAs by low pressure metalorganic chemical vapor deposition. 87-91
  
• Yingtao Li, Su Liu:
  Using different work function nanocrystal materials to improve the retention characteristics of nonvolatile memory devices. 92-94
  
• Elias Kougianos, Saraju P. Mohanty:
  Impact of gate-oxide tunneling on mixed-signal design and simulation of a nano-CMOS VCO. 95-103
  
• A. Asgari, E. Ahmadi, M. Kalafi:
  Al_xGa_1-xN/GaN multi-quantum-well ultraviolet detector based on p-i-n heterostructures. 104-107
  
• X. D. Li, D. W. Zhang, Z. Sun, Y. W. Chen, S. M. Huang:
  Metal-free indoline-dye-sensitized TiO₂ nanotube solar cells. 108-114
  
• Rujia Zou, Guannan Zou, Chunrui Wang, Shaolin Xue, Jian Liu, Guangping Ren:
  Improving the emission characteristics of a carbon nanotube film in NaCl electrolyte. 115-119
  
• Monem Krichen, Abdelaziz Zouari, Adel Ben Arab:
  A simple analytical model of thin films crystalline silicon solar cell with quasi-monocrystalline porous silicon at the backside. 120-125
  
• Keivan Navi, Mohammad Hossein Moaiyeri, Reza Faghih Mirzaee, Omid Hashemipour, Babak Mazloom Nezhad:
  Two new low-power Full Adders based on majority-not gates. 126-130
  
• Lei Gu, Zhengzheng Wu, Xinxin Li:
  An wide-range tunable on-chip radio-frequency LC-tank formed with a post-CMOS-compatible MEMS fabrication technique. 131-136
  
• Sangsik Park, Hyungsoo Uh:
  The effect of size on photodiode pinch-off voltage for small pixel CMOS image sensors. 137-140
  
• Mourad Fakhfakh:
  A novel Alienor-based heuristic for the optimal design of analog circuits. 141-148
  
• Quandai Wang, Yugang Duan, Yucheng Ding, Bingheng Lu, Jiawei Xiang, Lianfa Yang:
  Investigation on LIGA-like process based on multilevel imprint lithography. 149-155
  
• José Manuel de la Rosa, Rafael Castro-López, Alonso Morgado, Edwin C. Becerra-Alvarez, Rocio del Río, Francisco V. Fernández, Maria Belen Pérez-Verdú:
  Adaptive CMOS analog circuits for 4G mobile terminals - Review and state-of-the-art survey. 156-176
  
• Jordi Sacristán-Riquelme, Fredy Segura-Quijano, Antoni Baldi, M. Teresa Osés:
  Low power impedance measurement integrated circuit for sensor applications. 177-184
  
• Eoin Mc Gibney, John Barrett:
  Application of a combined methodology for extraction of the electrical model of a lead frame chip-scale package. 185-192
  
• Sh. M. Eladl:
  Modeling of ionizing radiation effect on optoelectronic-integrated devices (OEIDs). 193-196
  
• Shuguang Han, Baoyong Chi, Zhihua Wang:
  New implementation of high linear LNA using derivative superposition method. 197-201
  

Volume 40, Number 2, February 2009

• Klaus Lischka, Andreas Waag, H. Mariette, J. Neugebauer:
  Wide band gap semiconductor nanostructures for optoelectronic applications. 203
  
• Donat Josef As:
  Cubic group-III nitride-based nanostructures - basics and applications in optoelectronics. 204-209
  
• K. Thonke, M. Schirra, R. Schneider, A. Reiser, G. M. Prinz, M. Feneberg, J. Biskupek, U. Kaiser, R. Sauer:
  The role of stacking faults and their associated 0.13 ev acceptor state in doped and undoped ZnO layers and nanostructures. 210-214
  
• S. Michaelis de Vasconcellos, A. Pawlis, C. Arens, M. Panfilova, A. Zrenner, D. Schikora, Klaus Lischka:
  Exciton spectroscopy on single CdSe/ZnSe quantum dot photodiodes. 215-217
  
• A. Dmytruk, I. Dmitruk, I. Blonskyy, Rodion V. Belosludov, Yoshiyuki Kawazoe, A. Kasuya:
  ZnO clusters: Laser ablation production and time-of-flight mass spectroscopic study. 218-220
  
• M. Panfilova, A. Pawlis, C. Arens, S. Michaelis de Vasconcellos, G. Berth, K. P. Hüsch, V. Wiedemeier, A. Zrenner, Klaus Lischka:
  Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs. 221-223
  
• E. Latu-Romain, P. Gilet, G. Feuillet, P. Noel, J. Garcia, F. Levy, A. Chelnokov:
  Optical and electrical characterizations of vertically integrated ZnO nanowires. 224-228
  
• V. A. Karpyna, A. A. Evtukh, M. O. Semenenko, V. I. Lazorenko, G. V. Lashkarev, V. D. Khranovskyy, R. Yakimova, D. A. Fedorchenko:
  Electron field emission from ZnO self-organized nanostructures and doped ZnO: Ga nanostructured films. 229-231
  
• J. J. Zhu, L. Vines, T. Aaltonen, A. Yu. Kuznetsov:
  Correlation between nitrogen and carbon incorporation into MOVPE ZnO at various oxidizing conditions. 232-235
  
• F. Trani, M. Causà, S. Lettieri, A. Setaro, D. Ninno, V. Barone, P. Maddalena:
  Role of surface oxygen vacancies in photoluminescence of tin dioxide nanobelts. 236-238
  
• J. Petersen, C. Brimont, M. Gallart, O. Crégut, G. Schmerber, P. Gilliot, B. Hönerlage, C. Ulhaq-Bouillet, J. L. Rehspringer, C. Leuvrey, S. Colis, A. Slaoui, A. Dinia:
  Optical properties of ZnO thin films prepared by sol-gel process. 239-241
  
• M. Rosina, P. Ferret, P.-H. Jouneau, I.-C. Robin, F. Levy, G. Feuillet, M. Lafossas:
  Morphology and growth mechanism of aligned ZnO nanorods grown by catalyst-free MOCVD. 242-245
  
• H. Bieber, G. Versini, S. Barre, J.-L. Loison, G. Schmerber, C. Ulhaq-Bouillet, S. Colis, A. Dinia:
  Structural and magnetic study of hard-soft systems with ZnO barrier grown by pulsed laser deposition. 246-249
  
• I.-C. Robin, M. Lafossas, J. Garcia, M. Rosina, E. Latu-Romain, P. Ferret, P. Gilet, A. Tchelnokov, M. Azize, J. Eymery, G. Feuillet:
  Growth and characterization of ZnO nanowires on p-type GaN. 250-252
  
• A. Tribu, G. Sallen, T. Aichele, C. Bougerol, R. André, J. P. Poizat, S. Tatarenko, K. Kheng:
  Bright CdSe quantum dot inserted in single ZnSe nanowires. 253-255
  
• A. Pawlis, M. Panfilova, K. Sanaka, Thaddeus D. Ladd, Donat Josef As, Klaus Lischka, Yoshihisa Yamamoto:
  Low-threshold ZnSe microdisk laser based on fluorine impurity bound-exciton transitions. 256-258
  
• M. Biswas, E. McGlynn, M. O. Henry:
  Carbothermal reduction growth of ZnO nanostructures on sapphire - comparisons between graphite and activated charcoal powders. 259-261
  
• B. Dierre, X. L. Yuan, T. Sekiguchi:
  Effect of hydrogenation on the cathodoluminescence properties of ZnO single crystals. 262-264
  
• Y. Belghazi, M. Ait Aouaj, M. El Yadari, G. Schmerber, C. Ulhaq-Bouillet, C. Leuvrey, S. Colis, M. Abd-lefdil, A. Berrada, A. Dinia:
  Elaboration and characterization of Co-doped ZnO thin films deposited by spray pyrolysis technique. 265-267
  
• A. El Manouni, M. Tortosa, F. J. Manjón, M. Mollar, B. Marí, J. F. Sánchez-Royo:
  Effect of annealing on Zn_1-xCo_xO thin films prepared by electrodeposition. 268-271
  
• Gun Hee Kim, Dong Lim Kim, Byung Du Ahn, Sang Yeol Lee, Hyun Jae Kim:
  Investigation on doping behavior of copper in ZnO thin film. 272-275
  
• M. Mollar, M. Tortosa, R. Casasús, B. Marí:
  Electrodepositing Zn_xMn_yO_z alloys from zinc oxide to manganese oxide. 276-279
  
• Arne Behrends, Andrey Bakin, Andreas Waag:
  Investigation of ZnO nanopillars fabrication in a new Thomas Swan close coupled showerhead MOCVD reactor. 280-282
  
• Jae-Hoon Kim, Hooyoung Song, Eun Kyu Kim:
  Study of magnetic impurity as defects in ZnO grown by pulsed laser deposition. 283-285
  
• C. Y. Zhu, C. C. Ling, G. Brauer, W. Anwand, W. Skorupa:
  Deep-level defects study of arsenic-implanted ZnO single crystal. 286-288
  
• M. R. Wagner, H. W. Kunert, A. G. J. Machatine, A. Hoffmann, P. Niyongabo, J. Malherbe, J. Barnas:
  Bound and free excitons in ZnO. Optical selection rules in the absence and presence of time reversal symmetry. 289-292
  
• T. Krajewski, E. Guziewicz, M. Godlewski, L. Wachnicki, I. A. Kowalik, A. Wojcik-Glodowska, M. Lukasiewicz, K. Kopalko, V. Osinniy, M. Guziewicz:
  The influence of growth temperature and precursors' doses on electrical parameters of ZnO thin films grown by atomic layer deposition technique. 293-295
  
• C. Chandrinou, N. Boukos, C. Stogios, A. Travlos:
  PL study of oxygen defect formation in ZnO nanorods. 296-298
  
• Woo-Sun Lee, Gwon-Woo Choi, Yong-Jin Seo:
  Surface planarization of ZnO thin film for optoelectronic applications. 299-302
  
• A. Kabir, M. Panfilova, A. Pawlis, H. P. Wagner, Klaus Lischka:
  Well-width dependence of the phase coherent photorefractive effect in ZnSe quantum wells. 303-305
  
• A. Reiser, V. Raeesi, G. M. Prinz, M. Schirra, M. Feneberg, U. Röder, R. Sauer, K. Thonke:
  Growth of high-quality, uniform c-axis-oriented zinc oxide nano-wires on a-plane sapphire substrate with zinc oxide templates. 306-308
  
• M. Macatrão, M. Peres, C. P. L. Rubinger, M. J. Soares, L. C. Costa, F. M. Costa, T. Monteiro, N. Franco, E. Alves, B. Z. Saggioro, M. R. B. Andreeta, A. C. Hernandes:
  Structural and optical properties on thulium-doped LHPG-grown Ta₂O₅ fibres. 309-312
  
• Hooyoung Song, Jae-Hoon Kim, Eun Kyu Kim:
  Studies of defect states of ZnO thin films under different annealing conditions. 313-315
  
• J. B. Halpern, A. Bello, J. Gilcrease, G. L. Harris, M. He:
  Biphasic GaN nanowires: Growth mechanism and properties. 316-318
  
• A. Müller, G. Konstantinidis, M. Dragoman, D. Neculoiu, A. Dinescu, M. Androulidaki, M. Kayambaki, A. Stavrinidis, D. Vasilache, C. Buiculescu, I. Petrini, A. Kostopoulos, D. Dascalu:
  GaN membrane-supported UV photodetectors manufactured using nanolithographic processes. 319-321
  
• C. Buchheim, M. Röppischer, R. Goldhahn, G. Gobsch, C. Cobet, C. Werner, N. Esser, A. Dadgar, M. Wieneke, J. Bläsing, A. Krost:
  Influence of anisotropic strain on excitonic transitions in a-plane GaN films. 322-324
  
• L. Lahourcade, J. Renard, Prem K. Kandaswamy, B. Gayral, M. P. Chauvat, Prem Ruterana, Eva Monroy:
  PAMBE growth of (1 1 2- 2)-oriented GaN/AlN nanostructures on m-sapphire. 325-327
  
• D. Lagarde, A. Balocchi, H. Carrère, P. Renucci, T. Amand, S. Founta, H. Mariette, X. Marie:
  Exciton spin dynamics in zinc-blende GaN/AlN quantum dots: Temperature dependence. 328-330
  
• L. Rigutti, Antonio Castaldini, Anna Cavallini:
  Effects of internal fields on deep-level emission in InGaN/GaN quantum-well light-emitting diodes. 331-332
  
• S. Fündling, U. Jahn, A. Trampert, H. Riechert, H.-H. Wehmann, Andreas Waag:
  Metal-organic vapour-phase epitaxy of gallium nitride nanostructures for optoelectronic applications. 333-335
  
• Prem K. Kandaswamy, H. Machhadani, E. Bellet-Amalric, L. Nevou, M. Tchernycheva, L. Lahourcade, F. H. Julien, Eva Monroy:
  Strain effects in GaN/AlN multi-quantum-well structures for infrared optoelectronics. 336-338
  
• S. Leconte, L. Gerrer, Eva Monroy:
  Electronic transport through GaN/AlN single barriers: Effect of polarisation and dislocations. 339-341
  
• Huaping Lei, Jun Chen, Xunya Jiang, Gérard Nouet:
  Microstructure analysis in strained-InGaN/GaN multiple quantum wells. 342-345
  
• B. Arnaudov, D. S. Domanevskii, S. Evtimova, Ch. Ivanov, R. Kakanakov:
  Band-filling effect on the light emission spectra of InGaN/GaN quantum wells with highly doped barriers. 346-348
  
• F. B. Naranjo, M. González-Herráez, S. Valdueza-Felip, H. Fernández, J. Solis, S. Fernández, Eva Monroy, J. Grandal, M. A. Sánchez-García:
  Non-linear properties of nitride-based nanostructures for optically controlling the speed of light at 1.5 µm. 349-352
  
• Mao-Nan Chang, Ruo-Syuan Lin, Hsueh-Hsing Liu, Hung-Min Lin, Hung-Cheng Lin, Jen-Inn Chyi:
  Investigations of photo-assisted conductive atomic force microscopy on III-nitrides. 353-356
  
• Fayçal Djeffal, Djemai Arar, N. Lakhdar, T. Bendib, Z. Dibi, M. Chahdi:
  An approach based on particle swarm computation to study the electron mobility in wurtzite GaN. 357-359
  
• T. G. Andersson, X. Y. Liu, T. Aggerstam, P. Holmström, S. Lourdudoss, L. Thylen, Y. L. Chen, C. H. Hsieh, I. Lo:
  Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates. 360-362
  
• A. Touré, I. Halidou, Z. Benzarti, T. Boufaden:
  Growth temperature effect on MOVPE Si-doped GaN: Thermodynamic modeling. 363-366
  
• E. Tschumak, M. P. F. de Godoy, Donat Josef As, Klaus Lischka:
  Insulating substrates for cubic GaN-based HFETs. 367-369
  
• R. Kudrawiec, M. Motyka, J. Misiewicz, B. Paszkiewicz, R. Paszkiewicz, M. Tlaczala:
  Contactless electroreflectance study of band bending for undoped, Si- and Mg-doped GaN layers and AlGaN/GaN transistor heterostructures. 370-372
  
• S. M. Kang, T. I. Shin, Duc V. Dinh, J. H. Yang, S.-W. Kim, D. H. Yoon:
  Synthesis of GaN nanowires and nanorods via self-growth mode control. 373-376
  
• M. Peres, S. Magalhães, N. Franco, M. J. Soares, A. J. Neves, E. Alves, K. Lorenz, T. Monteiro:
  Influence of the AlN molar fraction on the structural and optical properties of praseodymium-doped Al_xGa_1-xN (0<=x<=1) alloys. 377-380
  
• Maria Elena Fragala, Graziella Malandrino:
  Characterization of ZnO and ZnO: Al films deposited by MOCVD on oriented and amorphous substrates. 381-384
  

Volume 40, Number 3, March 2009

• Abdelkader Saidane:
  Preface: Workshop of recent advances on low dimensional structures and devices (WRA-LDSD). 385
  
• S. M. Wang, H. Zhao, G. Adolfsson, Y. Q. Wei, Q. X. Zhao, J. S. Gustavsson, M. Sadeghi, A. Larsson:
  Dilute nitrides and 1.3 µm GaInNAs quantum well lasers on GaAs. 386-391
  
• R. Kudrawiec, M. Gladysiewicz, M. Motyka, J. Misiewicz, G. Cywinski, M. Siekacz, C. Skierbiszewski:
  Contactless electroreflectance of GaInN/AlInN multi quantum wells: The issue of broadening of optical transitions. 392-395
  
• B. Royall, N. Balkan:
  Dilute nitride n-i-p-i solar cells. 396-398
  
• L. Buckle, S. D. Coomber, T. Ashley, P. H. Jefferson, D. Walker, T. D. Veal, C. F. McConville, P. A. Thomas:
  Growth and characterisation of dilute antimonide nitride materials for long-wavelength applications. 399-402
  
• Y. Sun, N. Balkan, A. Erol, M. C. Arikan:
  Electronic transport in n- and p-type modulation-doped GaInNAs/GaAs quantum wells. 403-405
  
• M. Yilmaz, Y. Sun, N. Balkan, B. Ulug, A. Ulug, M. Sopanen, O. Reentilä, M. Mattila, C. Fontaine, A. Arnoult:
  Photoluminescence in n and p modulation-doped GaInNAs/GaAs quantum wells. 406-409
  
• A. Brannick, N. A. Zakhleniuk, B. K. Ridley, Lester F. Eastman, James R. Shealy, William J. Schaff:
  Hydrodynamic simulation of surface traps in the AlGaN/GaN HEMT. 410-412
  
• S. B. Lisesivdin, N. Balkan, E. Ozbay:
  A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs. 413-417
  
• A. Molina, A. García-Cristóbal, A. Cantarero:
  Tight-binding study of the optical properties of GaN/AlN polar and nonpolar quantum wells. 418-420
  
• A. Alemu, A. Freundlich:
  Opportunities in dilute nitride III-V semiconductors quantum confined p-i-n solar cells for single carrier resonant tunneling. 421-423
  
• J. Valenzuela, Samuel Mil'shtein:
  Quantum well model of a conjugated polymer heterostructure solar cell. 424-426
  
• Macho Anani, Christian Mathieu, Mohammed Khadraoui, Zouaoui Chama, Sara Lebid, Youcef Amar:
  High-grade efficiency III-nitrides semiconductor solar cell. 427-434
  
• Alex Axelevitch, Gady Golan:
  Novel silicon high sensitive photonic sensor. 435-438
  
• A. Miranda, M. Cruz-Irisson, C. Wang:
  Modelling of electronic and phononic states of Ge nanostructures. 439-441
  
• F. Jabeen, S. Rubini, F. Martelli:
  Growth of III-V semiconductor nanowires by molecular beam epitaxy. 442-445
  
• Bin Li, B. Partoens, F. M. Peeters, W. Magnus:
  Dielectric mismatch effect on coupled impurity states in a freestanding nanowire. 446-448
  
• Artur Medvid, Igor Dmitruk, Pavels Onufrijevs, Iryna Pundyk:
  Laser-induced self-organization of nano-wires on SiO₂/Si interface. 449-451
  
• P. Das Kanungo, A. Wolfsteller, N. D. Zakharov, P. Werner, U. Gösele:
  Enhanced electrical properties of nominally undoped Si/SiGe heterostructure nanowires grown by molecular beam epitaxy. 452-455
  
• A. Miranda, R. Vázquez, A. Díaz-Méndez, M. Cruz-Irisson:
  Optical matrix elements in tight-binding approach of hydrogenated Si nanowires. 456-458
  
• A. Alejo-Molina, J. J. Sánchez-Mondragón, D. A. May-Arrioja, D. Romero, J. Escobedo-Alatorre, A. Zamudio-Lara:
  Complex dispersion relation of 1D dielectric photonic crystal with thin metallic layers. 459-461
  
• Chandani Rajapaksha, Alex Freundlich:
  A real-time quantitative assessment of self-assembled quantum dots by reflection high-energy electron diffraction. 462-464
  
• G. Trevisi, L. Seravalli, P. Frigeri, M. Prezioso, J. C. Rimada, E. Gombia, R. Mosca, L. Nasi, C. Bocchi, S. Franchi:
  The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission. 465-468
  
• P. J. Carrington, V. A. Solov'ev, Q. Zhuang, S. V. Ivanov, A. Krier:
  InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications. 469-472
  
• Jong Chang Yi:
  Anisotropic transport properties of quantum dot arrays fabricated by the edge-defined nanowires. 473-475
  
• M. Alduraibi, C. Mitchell, S. Chakraborty, M. Missous:
  Surfactant-mediated growth of InAs-GaAs superlattices and quantum dot structures grown at different temperatures. 476-478
  
• R. J. Kashtiban, U. Bangert, M. Missous:
  Investigation of the effect of growth interruption on the formation of InAs/GaAs quantum dot superlattice near the InAs critical thickness. 479-482
  
• P. Moontragoon, N. Vukmirovic, Z. Ikonic, P. Harrison:
  Electronic structure and optical transitions in Sn and SnGe quantum dots in a Si matrix. 483-485
  
• T. Nuytten, M. Hayne, M. Henini, V. V. Moshchalkov:
  Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots studied in high magnetic fields. 486-488
  
• Anna Trojnar, Arkadiusz Wojs:
  Optical spectra of charged anisotropic quantum boxes. 489-491
  
• A. Marent, M. Geller, Dieter Bimberg:
  A novel nonvolatile memory based on self-organized quantum dots. 492-495
  
• Jan Vanis, Jirí Zelinka, Václav Malina, Mohamed Henini, Jirí Pangrác, Karel Melichar, Eduard Hulicius, Filip Sroubek, Jarmila Walachová:
  Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE. 496-498
  
• J. P. Coe, A. Sudbery, Irene D'Amico:
  Entanglement in GaAs and CdSe quantum dots: Exact calculations and DFT approximations. 499-501
  
• Thomas E. Hodgson, Lorenza Viola, Irene D'Amico:
  Effect of quantum dot shape on dynamical dephasing suppression in exciton qubits under applied electric field. 502-504
  
• Anna Sitek, Pawel Machnikowski:
  Collective optical response from quantum dot molecules. 505-506
  
• A. G. U. Perera, P. V. V. Jayaweera, G. Ariyawansa, S. G. Matsik, K. Tennakone, M. Buchanan, H. C. Liu, X. H. Su, P. Bhattacharya:
  Room temperature nano- and microstructure photon detectors. 507-511
  
• J.-M. Chauveau, C. Morhain, M. Teisseire, M. Laügt, C. Deparis, J. Zuniga-Perez, B. Vinter:
  (Zn, Mg)O/ZnO-based heterostructures grown by molecular beam epitaxy on sapphire: Polar vs. non-polar. 512-516
  
• Yong-ning He, Shi-guang Shang, Wuyuan Cui, Xin Li, Chang-Chun Zhu, Xun Hou:
  Investigation of luminescence properties of ZnO nanowires at room temperature. 517-519
  
• R. Sharma, J. P. Mondia, J. Schäfer, W. Smith, S.-H. Li, Y.-P. Zhao, Z. H. Lu, L. J. Wang:
  Measuring the optical properties of a trapped ZnO tetrapod. 520-522
  
• Nacir Tit, Ihab M. Obaidat:
  Transition behaviors from coupled-to-uncoupled CdTe-ZnTe symmetric versus asymmetric double quantum wells. 523-526
  
• Ihab M. Obaidat, Nacir Tit:
  Quantum-confinement versus strain effects in the Zn(Cd)S(Se) family of superlattices. 527-529
  
• R. Moug, C. Bradford, A. Curran, F. Izdebski, I. Davidson, K. A. Prior, R. J. Warburton:
  Development of an epitaxial lift-off technology for II-VI nanostructures using ZnMgSSe alloys. 530-532
  
• V. Haxha, R. Garg, M. A. Migliorato, I. W. Drouzas, J. M. Ulloa, P. M. Koenraad, M. J. Steer, H. Y. Liu, M. Hopkinson, D. J. Mowbray:
  Empirical bond order potential calculations of the elastic properties of epitaxial InGaSbAs layers. 533-536
  
• R. Kudrawiec, P. Poloczek, J. Misiewicz, M. Shafi, J. Ibáñez, R. H. Mari, M. Henini, M. Schmidbauer, S. V. Novikov, L. Turyanska, S. I. Molina, D. L. Sales, M. F. Chisholm:
  Photomodulated transmittance of GaBiAs layers grown on (0 0 1) and (3 1 1)B GaAs substrates. 537-539
  
• Ismail Saad, Michael L. P. Tan, Ing Hui Hii, Razali Ismail, Vijay K. Arora:
  Ballistic mobility and saturation velocity in low-dimensional nanostructures. 540-542
  
• A. Boubaker, M. Troudi, N. Sghaier, A. Souifi, Nicolas Baboux, A. Kalboussi:
  Electrical characteristics and modelling of multi-island single-electron transistor using SIMON simulator. 543-546
  
• Mohammad Taghi Ahmadi, Hui Houg Lau, Razali Ismail, Vijay K. Arora:
  Current-voltage characteristics of a silicon nanowire transistor. 547-549
  
• M. Alduraibi, C. Mitchell, S. Chakraborty, M. Missous:
  Interaction of low-temperature surfactant-grown InAs superlattice layers with arsenic precipitates. 550-553
  
• Samson Mil'shtein, A. Churi, C. Gil:
  Is HEMT operating in 2D mode? 554-557
  
• Kamil Pierscinski, Dorota Pierscinska, Maciej Bugajski, Christian Manz, Marcel Rattunde:
  Investigation of thermal management in optically pumped, antimonide VECSELs. 558-561
  
• J. Kovác, J. Skriniarová, M. Florovic, J. Jakabovic, J. Chovan, R. Srnánek, A. Vincze, B. Sciana, D. Radziewicz, Iwona Zborowska-Lindert, M. Tlaczala:
  Preparation and properties of Zn delta-doped GaAs/AlGaAs heterojunction phototransistor. 562-564
  
• Kamil Kosiel, Justyna Kubacka-Traczyk, Piotr Karbownik, Anna Szerling, Jan Muszalski, Maciej Bugajski, Przemek Romanowski, Jaroslaw Gaca, Marek Wójcik:
  Molecular-beam epitaxy growth and characterization of mid-infrared quantum cascade laser structures. 565-569
  
• O'Dae Kwon, D. K. Kim, J. H. Yoon, Y. C. Kim, Y. H. Jang, M. H. Shin:
  Photonic quantum ring laser of 3D whispering cave mode. 570-573
  
• D. A. May-Arrioja, Nathan Bickel, A. Alejo-Molina, M. Torres-Cisneros, J. J. Sanchez-Mondragon, P. LiKamWa:
  Intermixing of InP-based multiple quantum wells for integrated optoelectronic devices. 574-576
  
• James Mc Tavish, Zoran Ikonic, Dragan Indjin, Paul Harrison:
  Intervalley scattering in GaAs/AlGaAs quantum wells and quantum cascade lasers. 577-580
  
• Ismail Saad, Michael L. P. Tan, Aaron C. E. Lee, Razali Ismail, Vijay K. Arora:
  Scattering-limited and ballistic transport in a nano-CMOS circuit. 581-583
  
• V. B. Verma, V. C. Elarde, J. J. Coleman:
  Low-temperature electroluminescence from an ordered nanopore array diode laser. 584-587
  
• P. D. L. Judson, K. M. Groom, D. T. D. Childs, M. Hopkinson, N. Krstajic, R. A. Hogg:
  Maximising performance of optical coherence tomography systems using a multi-section chirped quantum dot superluminescent diode. 588-591
  
• Ichiro Shibasaki, Hirotaka Geka, Shuichi Ishida, Kenichi Oto, Tomoyuki Ishihara, Takahide Yoshida:
  Transport properties and observation of quantum Hall effects of InAs_0.1Sb_0.9 thin layers sandwiched between Al_0.1In_0.9Sb layers. 592-594
  
• J. Jakabovic, J. Kovác, M. Weis, D. Hasko, R. Srnánek, P. Valent, R. Resel:
  Preparation and properties of thin parylene layers as the gate dielectrics for organic field effect transistors. 595-597
  
• Hoa T. Nguyen, G. Gubbiotti, M. Madami, S. Tacchi, M. G. Cottam:
  Brillouin light scattering study of the spin dynamics in nanoscale permalloy stripes: Theory and experiment. 598-600
  
• R. Garg, V. Haxha, M. A. Migliorato, A. Hue, G. P. Srivastava, T. Hammerschmidt:
  Strain dependence of piezoelectric coefficients for pseudomorphically grown semiconductors. 601-603
  
• Lei Yin, Hongzhong Liu, Yucheng Ding, Hongbo Lan, Bingheng Lu:
  Fabrication of carbon nanotube arrays for field emission and sensor devices by nanoimprint lithography. 604-607
  
• Ho Sze Phing, Jalil Ali, Rosly Abdul Rahman, Saktioto:
  Growth dynamics and characteristics of fabricated Fiber Bragg Grating using phase mask method. 608-610
  
• G. Isic, V. Milanovic, J. Radovanovic, D. Indjin, Z. Ikonic, P. Harrison:
  Nonparabolicity effects and the spin-split electron dwell time in symmetric III-V double-barrier structures. 611-614
  
• T. Izák, M. Vojs, Marián Veselý, J. Skriniarová, I. Novotný, M. Michalka, R. Redhammer:
  Electrical property dependence on thickness and morphology of nanocrystalline diamond thin films. 615-617
  
• M. Torres-Cisneros, C. Velásquez-Ordónez, J. Sánchez-Mondragón, A. Campero, Oscar Gerardo Ibarra-Manzano, D. A. May-Arrioja, H. Plascencia-Mora, A. Espinoza-Calderón, I. A. Sukhoivanov:
  Synthesis and optical characterization of Ag⁰ nanoparticles. 618-620
  
• M. Torres-Cisneros, Naohisa Yanagihara, B. Gonzalez-Rolon, M. A. Meneses-Nava, Oscar Gerardo Ibarra-Manzano, D. A. May-Arrioja, J. Sánchez-Mondragón, E. Aguilera-Gómez, L. A. Aguilera-Cortés:
  Synthesis and nonlinear optical behavior of Ag nanoparticles in PMMA. 621-623
  
• R. Al Asmar, S. Youssef, Y. Zaatar, J. Podlecki, C. Eid, A. Foucaran:
  Hyper frequency modeling of resonated systems based on piezoelectric LiTaO₃ thin layers. 624-627
  
• Hisashi Shima, Yukio Tamai:
  Oxide nanolayer improving RRAM operational performance. 628-632
  
• Apurba Laha, E. Bugiel, Rytis Dargis, Dominik Schwendt, M. Badylevich, V. V. Afanasev, A. Stesmans, Andreas Fissel, H. Jörg Osten:
  Integration of low dimensional crystalline Si into functional epitaxial oxides. 633-637
  
• A. Díaz-Méndez, J. V. Marquina-Pérez, M. Cruz-Irisson, Ruben Vázquez-Medina, José Luis Del-Río-Correa:
  Chaotic noise MOS generator based on logistic map. 638-640
  
• J. J. Andrade, A. G. Brasil, P. M. A. de Farias, A. Fontes, B. S. Santos:
  Synthesis and characterization of blue emitting ZnSe quantum dots. 641-643
  
• Ke Sun, Milana Vasudev, Hye-Son Jung, Jianyong Yang, Ayan Kar, Yang Li, Kitt Reinhardt, Preston Snee, Michael A. Stroscio, Mitra Dutta:
  Applications of colloidal quantum dots. 644-649
  
• M. Vojs, E. Zdravecká, M. Marton, P. Bohác, L. Franta, M. Veselý:
  Properties of amorphous carbon layers for bio-tribological applications. 650-653
  

Volume 40, Numbers 4-5, April - May 2009

• Bernard Courtois:
  European Nano Systems 2007. 655
  
• Catherine Dezan, Ciprian Teodorov, Loïc Lagadec, Michael Leuchtenburg, Teng Wang, Pritish Narayanan, Csaba Andras Moritz:
  Towards a framework for designing applications onto hybrid nano/CMOS fabrics. 656-664
  
• Loïc Lagadec, Bernard Pottier, Damien Picard:
  Toolset for nano-reconfigurable computing. 665-672
  
• Y. Cedeño-Mattei, O. Perales-Pérez:
  Synthesis of high-coercivity cobalt ferrite nanocrystals. 673-676
  
• E. Calderón-Ortiz, O. Perales-Pérez, P. Voyles, G. Gutierrez, M. S. Tomar:
  Mn_xZn_1-xFe_2-yR_yO₄ (R=Gd, Eu) ferrite nanocrystals for magnetocaloric applications. 677-680
  
• S. Schreck, M. Rohde:
  Preparation and characterization of ceramics laser alloyed with WO₃ and CuO nanopowders. 681-686
  
• E. S. Vasilyeva, O. V. Tolochko, B. K. Kim, D. W. Lee, D. S. Kim:
  Synthesis of tungsten disulphide nanoparticles by the chemical vapor condensation method. 687-691
  
• Shuhei Inoue, Kazuya Nomura, Yukihiko Matsumura:
  Influence of catalyst supporters on catalyst nanoparticles in synthesis of single-walled carbon nanotubes. 692-696
  
• J. Voves, Z. Sobán, M. Janousek, V. Komarnickij, M. Cukr, V. Novák:
  Nanostructures defined by the local oxidation of the ferromagnetic GaMnAs layer. 697-705
  
• P. Klason, M. M. Rahman, Q.-H. Hu, O. Nur, R. Turan, M. Willander:
  Fabrication and characterization of p-Si/n-ZnO heterostructured junctions. 706-710
  

• Gil de Aquino Farias, Jeanlex S. de Sousa, Eudenílson L. Albuquerque, Mohamed Henini:
  International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008). 711
  
• S. A. Mikhailov:
  Non-linear graphene optics for terahertz applications. 712-715
  
• A. R. Wright, Junfeng Liu, Zhongshui Ma, Z. Zeng, W. Xu, C. Zhang:
  Thermodynamic properties of graphene nanoribbons under zero and quantizing magnetic fields. 716-718
  
• Timo Hyart, Natalia V. Alexeeva, Jussi Mattas, Kirill N. Alekseev:
  Possible THz Bloch gain in dc-ac-driven superlattices. 719-721
  
• Xiulai Xu, Frederic Brossard, Kiyotaka Hammura, David A. Williams, B. Alloing, L. H. Li, Andrea Fiore:
  Recombination dynamics of single quantum dots in a fiber system at telecommunication wavelengths. 722-724
  
• M. T. Greenaway, A. G. Balanov, D. Fowler, A. J. Kent, T. M. Fromhold:
  Using sound to generate ultra-high-frequency electron dynamics in superlattices. 725-727
  
• E. I. Rogacheva, S. G. Lyubchenko, O. N. Nashchekina, A. V. Meriuts, M. S. Dresselhaus:
  Quantum size effects and transport phenomena in thin Bi layers. 728-730
  
• Samuel Mil'shtein, P. Kurlawala:
  Patterning 0.05 µm gate on pHEMT. 731-732
  
• T. Clément, D. Ferrand, L. Besombes, H. Boukari, H. Mariette:
  Dynamic equilibrium of magnetic ions in Cd(Mn)Te quantum dots. 733-735
  
• Yoshimasa Sugimoto, Naoki Ikeda, Nobuhiko Ozaki, Yoshinori Watanabe, Shunsuke Ohkouchi, T. Kuroda, T. Mano, T. Ochiai, K. Kuroda, N. Koguchi, K. Sakoda, Kiyoshi Asakawa:
  Advanced quantum dot and photonic crystal technologies for integrated nanophotonic circuits. 736-740
  
• K. Liu, R. Tsu:
  Photoluminescence enhancement of quantum dots with photonic structures. 741-743
  
• Danilo R. Huanca, Daniel S. Raimundo, Walter J. Salcedo:
  Backside contact effect on the morphological and optical features of porous silicon photonic crystals. 744-748
  
• Mahi R. Singh:
  Photonic transistors made from metallic photonic quantum wires. 749-752
  
• A. F. Slachmuylders, B. Partoens, W. Magnus, F. M. Peeters:
  Neutral shallow donors near a metallic interface. 753-755
  
• M. Bescond, M. Lannoo, F. Michelini, L. Raymond, M. G. Pala:
  3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity. 756-758
  
• R. Peibst, T. Dürkop, E. Bugiel, N. Koo, T. Mollenhauer, Max C. Lemme, H. Kurz, K. R. Hofmann:
  PECVD grown Ge nanocrystals embedded in SiO₂: From disordered to templated self-organization. 759-761
  
• E. L. de Oliveira, E. L. Albuquerque, J. S. de Sousa, G. A. Farias:
  Excitonic properties of ordered and disordered SiGe nanocrystals. 762-765
  
• N. P. Stepina, E. S. Koptev, A. V. Dvurechenskii, A. I. Nikiforov:
  The transition from strong to weak localization in two-dimensional array of Ge/Si quantum dots. 766-768
  
• Byung-Gook Park, Jae Young Song, Jong Pil Kim, Hoon Jeong, Jung Hoon Lee, Seongjae Cho:
  Nanosculpture: Three-dimensional CMOS device structures for the ULSI era. 769-772
  
• H. Hao, X. Q. Shi, Z. Zeng:
  Theoretical demonstration of symmetric I-V curves in asymmetric molecular junction of monothiolate alkane. 773-775
  
• M. Rosenau da Costa, O. V. Kibis, M. E. Portnoi:
  Carbon nanotubes as a basis for terahertz emitters and detectors. 776-778
  
• P. Pereyra, V. G. Ibarra-Sierra, J. L. Cardoso:
  Space-time evolution of spin-wave packets. 779-781
  
• A. I. Nikiforov, V. V. Ulyanov, V. A. Timofeev, O. P. Pchelyakov:
  Wetting layer formation in superlattices with Ge quantum dots on Si(1 0 0). 782-784
  
• A. I. Yakimov, A. A. Bloshkin, A. I. Nikiforov, A. V. Dvurechenskii:
  Hole states in vertically coupled double Ge/Si quantum dots. 785-787
  
• Arturo Robledo-Martinez, Juan Carlos Sandoval, P. Pereyra:
  Novel properties of light transmission in multilayer stacks of air/silver thin films. 788-790
  
• Tim LaFave, Raphael Tsu:
  The value of monophasic capacitance of few-electron systems. 791-795
  
• A. Miranda, J. L. Cuevas, A. E. Ramos, M. Cruz-Irisson:
  Quantum confinement effects on electronic properties of hydrogenated 3C-SiC nanowires. 796-798
  
• P. C. M. Machado, F. A. P. Osório, A. N. Borges:
  Quasi-one-dimensional polaron gas in a GaAs quantum wire. 799-801
  
• Mahi R. Singh:
  The dipole-dipole interaction in photonic quantum wires. 802-804
  
• R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, G. Cywinski, M. Siekacz, C. Skierbiszewski:
  Electromodulation spectroscopy of the ground and excited state transitions in GaInN/AlInN multi-quantum wells. 805-808
  
• W. Xu, Z. Zeng, A. R. Wright, C. Zhang, J. Zhang, T. C. Lu:
  Exchange-induced band hybridization in InAs/GaSb based type II and broken-gap quantum well systems. 809-811
  
• L. L. Li, W. Xu, Z. Zeng, A. R. Wright, C. Zhang, J. Zhang, Y. L. Shi, T. C. Lu:
  Terahertz band-gap in InAs/GaSb type-II superlattices. 812-814
  
• L. L. Li, W. Xu, Z. Zeng, A. R. Wright, C. Zhang, J. Zhang, Y. L. Shi:
  Mid-infrared absorption by short-period InAs/GaSb type II superlattices. 815-817
  
• N. Ohtani, S. Noma, K. Akahane, M. Hosoda, K. Fujita:
  Experimental study on the condition of the formation of electric field domains in multiple finite-superlattices. 818-820
  
• E. I. Rogacheva, S. G. Lyubchenko, A. A. Drozdova:
  Effect of magnetic field on galvanomagnetic properties of mica/Bi/EuS heterostructures. 821-823
  
• M. Ishikawa, T. Nakayama:
  First-principles study of band-gap reduction in GaN/GaSb superlattices. 824-826
  
• H. Carrère, V. G. Truong, X. Marie, T. Amand, B. Urbaszek, R. Brenot, F. Lelarge, B. Rousseau:
  Strained InGaAsP multi-quantum-well structures for InP-based wide linewidth and polarization-insensitive semiconductor optical amplifiers. 827-829
  
• N. Romcevic, M. Romcevic, R. Kostic, D. Stojanovic, G. Karczewski, R. Galazka:
  Raman spectra of CdTe/ZnTe self-assembled quantum dots. 830-831
  
• Y. H. Zhou, Z. Zeng, X. Ju:
  The structural and electronic properties of Cu_mAg_n (m+n=6) clusters. 832-834
  
• A. S. Camacho, J. F. Nossa:
  Geometric dependence of the dielectric properties of quantum dots arrays. 835-837
  
• F. A. M. Marques, A. F. G. Monte, M. Hopkinson:
  Electric field effects on the carrier migration in self-assembled InAs/GaAs quantum dots. 838-840
  
• M. F. Pereira:
  The influence of dephasing in the coupling of light with intersubband transitions. 841-843
  
• Daniel S. Raimundo, Priscila B. Calíope, Danilo R. Huanca, Walter J. Salcedo:
  Anodic porous alumina structural characteristics study based on SEM image processing and analysis. 844-847
  
• P. W. Mauriz, M. S. Vasconcelos, F. F. de Medeiros, E. L. Albuquerque:
  Thermal radiation in quasiperiodic photonic crystals. 848-850
  
• M. S. Vasconcelos, P. W. Mauriz, E. L. Albuquerque:
  Optical filters based in quasiperiodic photonic crystal. 851-853
  
• Mahi R. Singh, A. Hatef:
  Quantum interference due to the spontaneous emission in nonlinear metallic photonic crystals. 854-856
  
• A. R. Wright, G. X. Wang, W. Xu, Z. Zeng, C. Zhang:
  The spin-orbit interaction enhanced terahertz absorption in graphene around the K point. 857-859
  
• O. Leenaerts, B. Partoens, F. M. Peeters:
  Adsorption of small molecules on graphene. 860-862
  
• M. Y. Ni, Z. Zeng, X. Ju:
  First-principles study of metal atom adsorption on the boron-doped carbon nanotubes. 863-866
  
• Naoki Ohtani, Masaya Murata, Takafumi Yamamoto:
  Observation and numerical analysis of quantum subband energies from photoluminescence spectra of organic multiple-quantum wells. 867-868
  
• Tim Schmielau, Mauro F. Pereira:
  Momentum dependent scattering matrix elements in quantum cascade laser transport. 869-871
  
• M. Gunes, N. Balkan, D. Zanato, William J. Schaff:
  A comparative study of electrical and optical properties of InN and In_0.48Ga_0.52N. 872-874
  
• Samuel Mil'shtein, A. Churi:
  Variable quantum well along p-HEMT channel. 875-876
  
• Vivian M. de Menezes, Solange B. Fagan, I. Zanella, R. Mota:
  Carbon nanotubes interacting with vitamins: First principles calculations. 877-879
  

Volume 40, Number 6, June 2009

• Ke Zhang, Shiwei Cheng, Xiaofang Zhou, Wenhong Li, Ran Liu:
  A wide band differentially switch-tuned CMOS monolithic quadrature VCO with a low Kvco and high linearity. 881-886
  
• A. Arena, N. Donato, G. Saitta:
  Capacitive humidity sensors based on MWCNTs/polyelectrolyte interfaces deposited on flexible substrates. 887-890
  
• D. Chalabi, A. Saidane, M. Idrissi-Benzohra, M. Benzohra:
  Thermal behavior Spice study of 6H-SiC NMOS transistors. 891-896
  
• Athanasios Tsitouras, Fotis Plessas:
  Ultra wideband, low-power, 3-5.6 GHz, CMOS voltage-controlled oscillator. 897-904
  
• Wen Ding, Gaofeng Wang:
  Analytical timing model for inductance-dominant interconnect based on traveling wave propagation. 905-911
  
• Cheng Luo, Anirban Chakraborty:
  Effects of dimensions on the sensitivity of a conducting polymer microwire sensor. 912-920
  
• Remzi Arslanalp, Erkan Yüce:
  A BJT technology-based current-mode tunable all-pass filter. 921-927
  
• Erkan Yüce, Shahram Minaei:
  Novel floating simulated inductors with wider operating-frequency ranges. 928-938
  
• Haisong Li, Qinsong Qian, Hong Wu, Weifeng Sun, Longxing Shi:
  Low cost bulk-silicon CDMOS technology and enhanced dv/dt high voltage driver circuit for PDP data driver IC. 939-943
  
• Yeonbae Chung, Seung-Ho Song:
  Implementation of low-voltage static RAM with enhanced data stability and circuit speed. 944-951
  
• Dennis Andrade, Ferran Martorell, Arindam Calomarde, Francesc Moll, Antonio Rubio:
  A new compensation mechanism for environmental parameter fluctuations in CMOS digital ICs. 952-957
  
• Maria Drakaki, Alkis A. Hatzopoulos, Stylianos Siskos:
  De-embedding method for on-wafer RF CMOS inductor measurements. 958-965
  
• Shih-Chang Hsia, Kuan-Ting Lin:
  High-performance active polyphase filter design for digital TV tuner. 966-972
  
• Armin Tajalli, Elizabeth J. Brauer, Yusuf Leblebici:
  Ultra-low power 32-bit pipelined adder using subthreshold source-coupled logic with 5 fJ/stage PDP. 973-978
  
• A. K. Kureshi, Mohd. Hasan:
  Performance comparison of CNFET- and CMOS-based 6T SRAM cell in deep submicron. 979-982
  
• Ahmet Kemal Bakkaloglu, Arzu Ergintav, Emre Ozeren, Ibrahim Tekin, Yasar Gurbuz:
  Design of a tunable multi-band differential LC VCO using 0.35 µm SiGe BiCMOS technology for multi-standard wireless communication systems. 983-990
  
• Chiheb Rebai, Manel Ben-Romdhane, Patricia Desgreys, Patrick Loumeau, Adel Ghazel:
  Pseudorandom signal sampler for relaxed design of multistandard radio receiver. 991-999
  
• Selahattin Sayil, Abhishek B. Akkur, Nelson Gaspard III:
  Single Event crosstalk shielding for CMOS logic. 1000-1006
  
• Yongseo Koo, Kwangyeob Lee, Kuidong Kim, Jongki Kwon:
  Design of SCR-based ESD protection device for power clamp using deep-submicron CMOS technology. 1007-1012
  
• Ranjith Kumar, Volkan Kursun:
  Temperature-adaptive voltage scaling for enhanced energy efficiency in subthreshold memory arrays. 1013-1025
  
• Louis-Francois Tanguay, Mohamad Sawan, Yvon Savaria:
  A very-high output impedance charge pump for low-voltage low-power PLLs. 1026-1031
  
• José M. Granado Criado, Miguel A. Vega-Rodríguez, Juan Manuel Sánchez-Pérez, Juan Antonio Gómez Pulido:
  IDEA and AES, two cryptographic algorithms implemented using partial and dynamic reconfiguration. 1032-1040
  

Volume 40, Number 7, July 2009

• Marcelo Lubaszewski, Andrew Richardson, C. C. Su:
  Guest editorial. 1041
  
• Peter Szabó, Balázs Németh, Márta Rencz:
  Thermal transient characterisation of the etching quality of micro electro mechanical systems. 1042-1047
  
• Hans G. Kerkhoff, Xiao Zhang:
  Fault co-simulation for test evaluation of heterogeneous integrated biological systems. 1048-1053
  
• Achraf Dhayni, Salvador Mir, Libor Rufer, Ahcène Bounceur, Emmanuel Simeu:
  Pseudorandom BIST for test and characterization of linear and nonlinear MEMS. 1054-1061
  
• Rodrigo Possamai Bastos, Fernanda Lima Kastensmidt, Ricardo Reis:
  Design of a soft-error robust microprocessor. 1062-1068
  
• Juha-Veikko Voutilainen, Jussi Putaala, Markku Moilanen, Heli Jantunen:
  A prognostic method for the embedded failure monitoring of solder interconnections with 1149.4 test bus architecture. 1069-1080
  

• Gabriela Nicolescu, Didier Buchs:
  Rapid systems prototyping at RSP'06. 1081
  
• Sanggyu Park, Sang-yong Yoon, Soo-Ik Chae:
  A mixed-level virtual prototyping environment for SystemC-based design methodology. 1082-1093
  
• Eftichios Koutroulis, Kostas Kalaitzakis, Vasileios Tzitzilonis:
  Development of an FPGA-based system for real-time simulation of photovoltaic modules. 1094-1102
  
• Christoforos Kachris, Stephan Wong, Stamatis Vassiliadis:
  Design and performance evaluation of an adaptive FPGA for network applications. 1103-1110
  
• Anupam Chattopadhyay, Arnab Sinha, Diandian Zhang, Rainer Leupers, Gerd Ascheid, Heinrich Meyr:
  Integrated verification approach during ADL-driven processor design. 1111-1123
  
• Michel Metzger, Amine Anane, Frédéric Rousseau, Julie Vachon, El Mostapha Aboulhamid:
  Introspection mechanisms for runtime verification in a system-level design environment. 1124-1134
  

• Marcin Janicki, Jedrzej Banaszczyk, Gilbert De Mey, Marek Kaminski, Bjorn Vermeersch, Andrzej Napieralski:
  Dynamic thermal modelling of a power integrated circuit with the application of structure functions. 1135-1140
  
• Marius Marcu, Dacian Tudor, Horatiu Moldovan, Sebastian Fuicu, Mircea Popa:
  Energy characterization of mobile devices and applications using power-thermal benchmarks. 1141-1153
  
• N. Spennagallo, Lorenzo Codecasa, Dario D'Amore, Paolo Maffezzoni:
  Evaluating the effects of temperature gradients and currents nonuniformity in on-chip interconnects. 1154-1159
  

Volume 40, Number 8, August 2009

• M. Gassoumi, J. M. Bluet, C. Gaquière, G. Guillot, H. Maaref:
  Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate. 1161-1165
  
• Xiu-Xia Zhang, Chang-Chun Zhu:
  Electron translocation and field emission in printed CNT film by high-temperature sintering and post-treatment. 1166-1169
  
• Henry M. D. Ip, Emmanuel M. Drakakis, Anil A. Bharath:
  A 19 nW analogue CMOS log-domain 6th-order Bessel filter without E-minus cells. 1170-1174
  
• J. Gubelmann, Paulo Augusto Dal Fabbro, Marc Pastre, Maher Kayal:
  High-efficiency dynamic supply CMOS audio power amplifier for low-power applications. 1175-1183
  
• Yu-Kang Lo, Hung-Chun Chien:
  Current-controllable monostable multivibrator with retriggerable function. 1184-1191
  
• Zhi Juan Su, Gui Fu Ding, Wen Jing Lu, Wei qiang Chen:
  Broadband circularly polarized CPW-fed slot antenna array for millimeter wave application. 1192-1195
  
• Kai Yang, Zhigang Li, Yupeng Jing, Dapeng Chen, Tianchun Ye:
  A simple prediction method for composite rectangular microcantilevers with equal width and the dimensional optimization. 1196-1201
  
• Yan Huang, Emmanuel M. Drakakis, Patrick Degenaar, Chris Toumazou:
  A CMOS image sensor with light-controlled oscillating pixels for an investigative optobionic retinal prosthesis system. 1202-1211
  
• Massoud Masoumi, Nasser Masoumi, Amir Javanpak:
  A new and efficient approach for estimating the accurate time-domain response of single and capacitive coupled distributed RC interconnects. 1212-1224
  
• William Prodanov, Maurizio Valle:
  High abstraction level CAD tool implementation of MOS drain current models. 1225-1234
  
• Ping Yang, Xiangnan Qin:
  A hybrid optimization approach for chip placement of multi-chip module packaging. 1235-1243
  
• Wancheng Zhang, Nan-Jian Wu:
  Compact non-binary fast adders using single-electron devices. 1244-1254
  

Volume 40, Number 9, September 2009

• Daniela De Venuto:
  Guest editorial. 1255-1256
  
• Amit Laknaur, Rui Xiao, Sai Raghuram Durbha, Haibo Wang:
  Design of a window comparator with adaptive error threshold for online testing applications. 1257-1263
  
• Asha Balijepalli, Joseph Ervin, William Lepkowski, Yu Cao, Trevor J. Thornton:
  Compact modeling of a PD SOI MESFET for wide temperature designs. 1264-1273
  
• Benoit Dubois, Jean-Baptiste Kammerer, Luc Hebrard, Francis Braun:
  Modelling of hot-carrier degradation and its application for analog design for reliability. 1274-1280
  
• Juan Pablo Martinez Brito, Sergio Bampi:
  A DC offset and CMRR analysis in a CMOS 0.35 µm operational transconductance amplifier using Pelgrom's area/accuracy tradeoff. 1281-1292
  
• Daniela De Venuto, Bruno Riccò:
  Fault diagnosis and test of DNA sensor arrays by using IFA approach. 1293-1299
  

• Paolo Bruschi, Massimo Piotto, N. Bacci:
  Postprocessing, readout and packaging methods for integrated gas flow sensors. 1300-1307
  
• Ada Fort, C. Lotti, Marco Mugnaini, R. Palombari, Santina Rocchi, Valerio Vignoli:
  A two electrode C-NiO Nafion amperometric sensor for NO₂ detection. 1308-1312
  
• Refet Firat Yazicioglu, Tom Torfs, Patrick Merken, Julien Penders, Vladimir Leonov, Robert Puers, Bert Gyselinckx, Chris Van Hoof:
  Ultra-low-power biopotential interfaces and their applications in wearable and implantable systems. 1313-1321
  
• Alessandra Flammini, Paolo Ferrari, Daniele Marioli, Emiliano Sisinni, Andrea Taroni:
  Wired and wireless sensor networks for industrial applications. 1322-1336
  
• Davide Brunelli, Denis Dondi, Alessandro Bertacchini, Luca Larcher, Paolo Pavan, Luca Benini:
  Photovoltaic scavenging systems: Modeling and optimization. 1337-1344
  
• Massimo Lanzoni, Claudio Stagni, Bruno Riccò:
  Smart sensors for fast biological analysis. 1345-1349
  
• Michael J. Ohletz, F. Schulze:
  Design, qualification and production of integrated sensor interface circuits for high-quality automotive applications. 1350-1357
  
• Daniela De Venuto, Sandro Carrara, Bruno Riccò:
  Design of an integrated low-noise read-out system for DNA capacitive sensors. 1358-1365
  

• Márta Rencz:
  Thermal investigations of integrated circuits in systems at THERMINIC'07. 1366
  
• Stéphane Grauby, Luis David Patiño Lopez, M. Amine Salhi, Etienne Puyoo, Jean-Michel Rampnoux, Wilfrid Claeys, Stefan Dilhaire:
  Joule expansion imaging techniques on microlectronic devices. 1367-1372
  
• K. Pierscinski, D. Pierscinska, M. Bugajski:
  Quantification of thermoreflectance temperature measurements in high-power semiconductor devices - lasers and laser bars. 1373-1378
  
• Brian Smith, Thomas Brunschwiler, Bruno Michel:
  Comparison of transient and static test methods for chip-to-sink thermal interface characterization. 1379-1386
  
• A. Petropoulos, G. Kaltsas, D. Goustouridis:
  A novel system for displacement sensing, integrated on a plastic substrate. 1387-1392
  
• P. Csíkvári, Péter Fürjes, Cs. Dücso, István Bársony:
  Micro-hotplates for thermal characterisation of structural materials of MEMS. 1393-1397
  
• Daniel Mitrani, Jordi Salazar, Antoni Turó, Miguel Jesus García, Juan Antonio Chávez:
  One-dimensional modeling of TE devices considering temperature-dependent parameters using SPICE. 1398-1405
  
• Daniel Mitrani, Jordi Salazar, Antoni Turó, Miguel Jesus García, Juan Antonio Chávez:
  Transient distributed parameter electrical analogous model of TE devices. 1406-1410
  
• Bjorn Vermeersch, Gilbert De Mey:
  Dynamic electrothermal simulation of integrated resistors at device level. 1411-1416
  

Volume 40, Number 10, October 2009

• D. Meganathan, Amrith Sukumaran, M. M. Dinesh Babu, S. Moorthi, R. Deepalakshmi:
  A systematic design approach for low-power 10-bit 100 MS/s pipelined ADC. 1417-1435
  
• Bo-Yuan Ye, Po-Yu Yeh, Sy-Yen Kuo, Ing-Yi Chen:
  Design-for-testability techniques for CORDIC design. 1436-1440
  
• Keivan Navi, Vahid Foroutan, Mostafa Rahimi Azghadi, Mehrdad Maeen, Maryam Ebrahimpour, M. Kaveh, Omid Kavehie:
  A novel low-power full-adder cell with new technique in designing logical gates based on static CMOS inverter. 1441-1448
  
• Lei Zhang, Tadeusz Kwasniewski:
  FIR filter optimization using bit-edge equalization in high-speed backplane data transmission. 1449-1457
  
• Yan Huang, Emmanuel M. Drakakis, Chris Toumazou:
  A 30 pA/V-25µA/V linear CMOS channel-length-modulation OTA. 1458-1465
  
• Ricardo C. Goncalves da Silva, Cristiano Lazzari, Henri Boudinov, Luigi Carro:
  CMOS voltage-mode quaternary look-up tables for multi-valued FPGAs. 1466-1470
  
• Saeid Gorgin, Ghassem Jaberipur:
  A fully redundant decimal adder and its application in parallel decimal multipliers. 1471-1481
  
• Shiyan Hu, Jiang Hu:
  A fast general slew constrained minimum cost buffering algorithm. 1482-1486
  
• Mohammad Moghaddam Tabrizi, Nasser Masoumi:
  Low-power and high-performance techniques in global interconnect signaling. 1487-1495
  
• Yong Chen, Fei Yuan, Gul N. Khan:
  A wide dynamic range CMOS image sensor with pulse-frequency-modulation and in-pixel amplification. 1496-1501
  

Volume 40, Number 11, November 2009

• Mohab Anis, Emad Hegazi:
  Introduction to the special issue on the 2007 International Conference on Microelectronics. 1503
  
• Ahmed Ashry, Khaled Sharaf, Magdi Ibrahim:
  A compact low-power UHF RFID tag. 1504-1513
  
• David C. W. Ng, David K. K. Kwong, Ngai Wong:
  A 30µW CMOS bandgap reference featuring a 1.5-6 mA output driving current and a Miller-effect startup circuit. 1514-1522
  
• DiaaEldin Khalil, Muhammad M. Khellah, Nam-Sung Kim, Yehea I. Ismail, Tanay Karnik, Vivek De:
  SRAM dynamic stability estimation using MPFP and its applications. 1523-1530
  
• Sherif A. Tawfik, Volkan Kursun:
  FinFET domino logic with independent gate keepers. 1531-1540
  
• Bassel Hanafi, Emad Hegazi:
  A technique for truly linear LC VCO tuning, a proof of concept. 1541-1546
  
• Saeid Hashemi, Mohamad Sawan, Yvon Savaria:
  A novel low-drop CMOS active rectifier for RF-powered devices: Experimental results. 1547-1554
  
• Jong Cheol Park, Jae Yeong Park:
  Wideband LC balun transformer using coupled LC resonators embedded into organic substrate. 1555-1560
  
• Amr Amin Hafez, Mohamed Dessouky, Hani Ragai:
  Design of a low-power ZigBee receiver front-end for wireless sensors. 1561-1568
  

• Mohamad Sawan, Mounir Boukadoum:
  Introduction to the Special issue on Digital and Mixed-Signal Circuits and Systems. 1569-1570
  
• José C. García, Juan A. Montiel-Nelson, Saeid Nooshabadi:
  CMOS design and analysis of low-voltage signaling methodology for energy efficient on-chip interconnects. 1571-1581
  
• Hau T. Ngo, Vijayan K. Asari:
  Partitioning and gating technique for low-power multiplication in video processing applications. 1582-1589
  
• Michael A. Turi, José G. Delgado-Frias:
  Decreasing energy consumption in address decoders by means of selective precharge schemes. 1590-1600
  
• Taek-Jun Kwon, Jeffrey T. Draper:
  Floating-point division and square root using a Taylor-series expansion algorithm. 1601-1605
  
• Bijoy A. Jose, Damu Radhakrishnan:
  Redundant binary partial product generators for compact accumulation in Booth multipliers. 1606-1612
  
• Holger Eisenreich, Christian Mayr, Stephan Henker, Michael Wickert, René Schüffny:
  A novel ADPLL design using successive approximation frequency control. 1613-1622
  
• An Hu, Fei Yuan:
  Parallel links with current-mode incremental signaling and per-pin skew compensation. 1623-1631
  
• Chao Wu, Wei-Ping Zhu, M. N. S. Swamy:
  Generalized polyphase structure-based Mth-band filter design and application to image interpolation. 1632-1641
  
• Stefan Eberli, Andreas Burg, Wolfgang Fichtner:
  Implementation of a 2×2 MIMO-OFDM receiver on an application specific processor. 1642-1649
  
• Jean-Luc Danger, Sylvain Guilley, Philippe Hoogvorst:
  High speed true random number generator based on open loop structures in FPGAs. 1650-1656
  
• René Gagné, Jean Belzile, Claude Thibeault:
  From synchronous to GALS: A new architecture for FPGAs. 1657-1666
  
• Christian Fobel, Gary Gréwal, Andrew Morton:
  Hardware accelerated FPGA placement. 1667-1671
  

Volume 40, Number 12, December 2009

• Antonio Petraglia, Fernando Antonio Pinto Baruqui, Jacqueline S. Pereira:
  Switched-capacitor decimation filter design using time-multiplexing and polyphase decomposition of transfer functions with low denominator orders. 1673-1680
  
• Wei Zhang, Changxin Chen, Yafei Zhang:
  Modeling of carbon nanotube field-effect transistor with nanowelding treatment. 1681-1685
  
• Houssein Jaber, Fabrice Monteiro, Stanislaw J. Piestrak, Abbas Dandache:
  Design of parallel fault-secure encoders for systematic cyclic block transmission codes. 1686-1697
  
• Chien-Cheng Wei, Hsien-Chin Chiu, Yi-Tzu Yang, Jeffrey S. Fu:
  A novel complementary Colpitts differential CMOS VCO with low phase noise performance. 1698-1704
  
• Roberto Perez-Andrade, René Cumplido, Claudia Feregrino Uribe, Fernando Martin del Campo:
  A versatile linear insertion sorter based on an FIFO scheme. 1705-1713
  
• M. C. Tu, Y. C. Wang, H. Y. Ueng:
  Linearity optimizing on HBT power amplifier design. 1714-1718
  
• Erkan Yüce:
  Current-mode electronically tunable biquadratic filters consisting of only CCCIIs and grounded capacitors. 1719-1725
  
• Benjamin Nicolle, Rami Khouri, Fabien Ferrero, William Tatinian, Lorenzo Carpineto, Gilles Jacquemod:
  On the use of behavioral modeling within the RFIC design flow: Satellite receiver case study. 1726-1735
  
• Luis Quintanilla, Jesús Arias, Jokin Segundo, Lourdes Enríquez, Jesús M. Hernández-Mangas, José Vicente:
  A comprehensive analysis of the effect of finite amplifier bandwidth and excess loop delay in continuous-time sigma-delta modulators. 1736-1745
  
• João Paulo Carmo, José Higino Correia:
  Low-power/low-voltage RF microsystems for wireless sensors networks. 1746-1754
  
• Elodie Ebrard, Bruno Allard, Philippe Candelier, Patrice Waltz:
  Review of fuse and antifuse solutions for advanced standard CMOS technologies. 1755-1765
  
• Deyuan Xiao, Xi Wang, Yuehui Yu, Jing Chen, Miao Zhang, Zhongying Xue, Jiexin Luo:
  TCAD study on gate-all-around cylindrical (GAAC) transistor for CMOS scaling to the end of the roadmap. 1766-1771
  
• José A. Siqueira Dias, Welligton A. do Amaral, Wilmar B. de Moraes:
  A curvature-compensated CMOS voltage reference using V²_th characteristics. 1772-1778
  
• Emanuele Bottino, Paolo Massobrio, Sergio Martinoia, Giacomo Pruzzo, Maurizio Valle:
  Low-noise low-power CMOS preamplifier for multisite extracellular neuronal recordings. 1779-1787
  
• Ali Alaeldine, Richard Perdriau, Ali Haidar:
  A comprehensive simulation model for immunity prediction in integrated circuits with respect to substrate injection. 1788-1795
  

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