Microelectronics Reliability, Volume 45

Volume 45, Number 1, January 2005

• Tomasz Brozek:
  Editorial. 1-2
  Electronic Edition (link) BibTeX
• M. Houssa:
  Modelling negative bias temperature instabilities in advanced p-MOSFETs. 3-12
  Electronic Edition (link) BibTeX
• Prasad Chaparala, Douglas Brisbin:
  Impact of NBTI and HCI on PMOSFET threshold voltage drift. 13-18
  Electronic Edition (link) BibTeX
• Shyue Seng Tan, Tu Pei Chen, Chew Hoe Ang, Lap Chan:
  Mechanism of nitrogen-enhanced negative bias temperature instability in pMOSFET. 19-30
  Electronic Edition (link) BibTeX
• Vijay Reddy, Anand T. Krishnan, Andrew Marshall, John Rodriguez, Sreedhar Natarajan, Tim Rost, Srikanth Krishnan:
  Impact of negative bias temperature instability on digital circuit reliability. 31-38
  Electronic Edition (link) BibTeX
• Christian Schlünder, Ralf Brederlow, Benno Ankele, Wolfgang Gustin, Karl Goser, Roland Thewes:
  Effects of inhomogeneous negative bias temperature stress on p-channel MOSFETs of analog and RF circuits. 39-46
  Electronic Edition (link) BibTeX
• Terence B. Hook, Ronald J. Bolam, William Clark, Jay S. Burnham, Nivo Rovedo, Laura Schutz:
  Negative bias temperature instability on three oxide thicknesses (1.4/2.2/5.2 nm) with nitridation variations and deuteration. 47-56
  Electronic Edition (link) BibTeX
• Shinji Fujieda, Yoshinao Miura, Motofumi Saitoh, Yuden Teraoka, Akitaka Yoshigoe:
  Characterization of interface defects related to negative-bias temperature instability in ultrathin plasma-nitrided SiON/Si<1 0 0> systems. 57-64
  Electronic Edition (link) BibTeX
• Shimpei Tsujikawa, Jiro Yugami:
  Positive charge generation due to species of hydrogen during NBTI phenomenon in pMOSFETs with ultra-thin SiON gate dielectrics. 65-69
  Electronic Edition (link) BibTeX
• M. A. Alam, S. Mahapatra:
  A comprehensive model of PMOS NBTI degradation. 71-81
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• V. Huard, M. Denais, F. Perrier, N. Revil, C. R. Parthasarathy, A. Bravaix, E. Vincent:
  A thorough investigation of MOSFETs NBTI degradation. 83-98
  Electronic Edition (link) BibTeX
• Maxim Ershov, Sharad Saxena, Sean Minehane, P. Clifton, Mark Redford, R. Lindley, H. Karbasi, S. Graves, S. Winters:
  Degradation dynamics, recovery, and characterization of negative bias temperature instability. 99-105
  Electronic Edition (link) BibTeX
• Yung-Huei Lee, Steve Jacobs, Stefan Stadler, Neal Mielke, Ramez Nachman:
  The impact of PMOST bias-temperature degradation on logic circuit reliability performance. 107-114
  Electronic Edition (link) BibTeX
• Ninoslav Stojadinovic, I. Manic, V. Davidovic, D. Dankovic, S. Djoric-Veljkovic, S. Golubovic, S. Dimitrijev:
  Effects of electrical stressing in power VDMOSFETs. 115-122
  Electronic Edition (link) BibTeX
• E. Atanassova, R. V. Konakova, V. F. Mitin, J. Koprinarova, O. S. Lytvym, O. B. Okhrimenko, V. V. Schinkarenko, D. Virovska:
  Effect of microwave radiation on the properties of Ta₂O₅-Si microstructures. 123-135
  Electronic Edition (link) BibTeX
• Jian Chen, Jianbin Xu, K. Xue, J. An, Ning Ke, W. Cao, H. B. Xia, J. Shi, D. C. Tian:
  Nanoscale structural characteristics and electron field emission properties of transition metal-fullerene compound TiC₆₀ films. 137-142
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• Y. C. Lin, X. Chen, Xingsheng Liu, Guo-Quan Lu:
  Effect of substrate flexibility on solder joint reliability. Part II: finite element modeling. 143-154
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• Ming-e Jing, Yue Hao, Jin-feng Zhang, Peijun Ma:
  Efficient parametric yield optimization of VLSI circuit by uniform design sampling method. 155-162
  Electronic Edition (link) BibTeX
• Andrej Zemva, Baldomir Zajc:
  Test generation for technology-specific multi-faults based on detectable perturbations. 163-173
  Electronic Edition (link) BibTeX
• E. Miranda, B. Brandala:
  A function-fit model for the hard breakdown I-V characteristics of ultra-thin oxides in MOS structures. 175-178
  Electronic Edition (link) BibTeX
• Cher Ming Tan, Zhenghao Gan, Wai Fung Ho, Sam Chen, Robert Liu:
  Determination of the dice forward I-V characteristics of a power diode from a packaged device and its applications. 179-184
  Electronic Edition (link) BibTeX
• Weifeng Sun, Longxing Shi:
  Improving the yield and reliability of the bulk-silicon HV-CMOS by adding a P-well. 185-190
  Electronic Edition (link) BibTeX
• P. A. Martínez Martínez, B. M. Monge Sanz:
  Single resistance controlled oscillator using unity gain cells. 191-194
  Electronic Edition (link) BibTeX
• Mile K. Stojcev:
  Analog IP blocks. 195-196
  Electronic Edition (link) BibTeX
• Mile K. Stojcev:
  Layout-mixed-signal. 197-198
  Electronic Edition (link) BibTeX

Volume 45, Number 2, February 2005

• Wolfgang Stadler:
  Guest editorial. 199-200
  Electronic Edition (link) BibTeX
• Jeremy C. Smith, Gianluca Boselli:
  A MOSFET power supply clamp with feedback enhanced triggering for ESD protection in advanced CMOS technologies. 201-210
  Electronic Edition (link) BibTeX
• Michael Stockinger, James W. Miller, Michael G. Khazhinsky, Cynthia A. Torres, James C. Weldon, Bryan D. Preble, Martin J. Bayer, Matthew D. Akers, Vishnu G. Kamat:
  Advanced rail clamp networks for ESD protection. 211-222
  Electronic Edition (link) BibTeX
• Michael Chaine, James Davis, Al Kearney:
  TLP analysis of 0.125 mum CMOS ESD input protection circuit. 223-231
  Electronic Edition (link) BibTeX
• Florence Azaïs, B. Caillard, S. Dournelle, P. Salomé, Pascal Nouet:
  A new multi-finger SCR-based structure for efficient on-chip ESD protection. 233-243
  Electronic Edition (link) BibTeX
• Sami Hyvonen, Sopan Joshi, Elyse Rosenbaum:
  Comprehensive ESD protection for RF inputs. 245-254
  Electronic Edition (link) BibTeX
• Vesselin K. Vassilev, S. Thijs, P. L. Segura, P. Wambacq, Paul Leroux, Guido Groeseneken, M. I. Natarajan, H. E. Maes, Michiel Steyaert:
  ESD-RF co-design methodology for the state of the art RF-CMOS blocks. 255-268
  Electronic Edition (link) BibTeX
• Wolfgang Stadler, K. Esmark, K. Reynders, M. Zubeidat, M. Graf, Wolfgang Wilkening, J. Willemen, N. Qu, S. Mettler, M. Etherton:
  Test circuits for fast and reliable assessment of CDM robustness of I/O stages. 269-277
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• Heinrich Wolf, Horst A. Gieser, Wolfgang Stadler, Wolfgang Wilkening:
  Capacitively coupled transmission line pulsing cc-TLP--a traceable and reproducible stress method in the CDM-domain. 279-285
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• Andrew Olney, Brad Gifford, John Guravage, Alan Righter:
  Real-world printed circuit board ESD failures. 287-295
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• S. Bargstädt-Franke, Wolfgang Stadler, K. Esmark, M. Streibl, K. Domanski, Horst A. Gieser, Heinrich Wolf, W. Bala:
  Transient latch-up: experimental analysis and device simulation. 297-304
  Electronic Edition (link) BibTeX
• Al Wallash:
  ESD SPICE model and measurements for a hard disk drive. 305-311
  Electronic Edition (link) BibTeX
• M. Streibl, F. Zängl, K. Esmark, Robert Schwencker, Wolfgang Stadler, Harald Gossner, S. Drüen, Doris Schmitt-Landsiedel:
  High abstraction level permutational ESD concept analysis. 313-321
  Electronic Edition (link) BibTeX
• Steven H. Voldman:
  A review of latchup and electrostatic discharge (ESD) in BiCMOS RF silicon germanium technologies: Part I - ESD. 323-340
  Electronic Edition (link) BibTeX
• N. A. Hastas, N. Archontas, C. A. Dimitriadis, G. Kamarinos, T. Nikolaidis, N. Georgoulas, A. Thanailakis:
  Substrate current and degradation of n-channel polycrystalline silicon thin-film transistors. 341-348
  Electronic Edition (link) BibTeX
• Tsz Yin Man, Mansun Chan:
  A 2-bit highly scalable nonvolatile memory cell with two electrically isolated charge trapping sites. 349-354
  Electronic Edition (link) BibTeX
• P. C. Adell, R. D. Schrimpf, C. R. Cirba, W. T. Holman, X. Zhu, H. J. Barnaby, O. Mion:
  Single event transient effects in a voltage reference. 355-359
  Electronic Edition (link) BibTeX
• S. H. Choa:
  Reliability of vacuum packaged MEMS gyroscopes. 361-369
  Electronic Edition (link) BibTeX
• Chang-Lin Yeh, Yi-Shao Lai:
  Transient analysis of the impact stage of wirebonding on Cu/low-K wafers. 371-378
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• Daniel T. Rooney, DeePak Nager, David Geiger, Dongkai Shanguan:
  Evaluation of wire bonding performance, process conditions, and metallurgical integrity of chip on board wire bonds. 379-390
  Electronic Edition (link) BibTeX
• E. Misra, Md M. Islam, Mahbub Hasan, H. C. Kim, T. L. Alford:
  Percolative approach for failure time prediction of thin film interconnects under high current stress. 391-395
  Electronic Edition (link) BibTeX
• Vitezslav Benda:
  A note on trap recombination in high voltage device structures. 397-401
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• Mile K. Stojcev:
  Data communication. 403-404
  Electronic Edition (link) BibTeX
• Mile K. Stojcev:
  Yale N. Patt and Sanjay J. Patel, Introduction to Computing Systems: From Bits and Gates to C and Beyond Second edition, McGraw-Hill Higher Education, Boston (2004) ISBN 0-07-121503-4 Softcover, pp 632, plus XXIV. 405-406
  Electronic Edition (link) BibTeX
• Mile K. Stojcev:
  Vadim Ivanov, Igor Filanovsky, Operational Amplifier Speed and Accuracy Improvement: Analog Circuit Design with Structural Methodology, Kluwer Academic Publishers, Boston, 2004, Hardcover, pp 194, plus XIV, ISBN 1-4020-7772-6. 407-408
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Volume 45, Numbers 3-4, March-April 2005

• Joachim N. Burghartz:
  Review of add-on process modules for high-frequency silicon technology. 409-418
  Electronic Edition (link) BibTeX
• John S. Suehle, B. Zhu, Y. Chen, Joseph B. Bernstein:
  Detailed study and projection of hard breakdown evolution in ultra-thin gate oxides. 419-426
  Electronic Edition (link) BibTeX
• Bonnie E. Weir, Che-Choi Leung, Paul J. Silverman, Muhammad A. Alam:
  Gate dielectric breakdown in the time-scale of ESD events. 427-436
  Electronic Edition (link) BibTeX
• Steven H. Voldman:
  A review of CMOS latchup and electrostatic discharge (ESD) in bipolar complimentary MOSFET (BiCMOS) Silicon Germanium technologies: Part II - Latchup. 437-455
  Electronic Edition (link) BibTeX
• V. A. Vashchenko, P. Hopper:
  Bipolar SCR ESD devices. 457-471
  Electronic Edition (link) BibTeX
• Ji-hyuk Lim, Keon Kuk, Seung-joo Shin, Seog-soon Baek, Young-jae Kim, Jong-woo Shin, Yong-soo Oh:
  Failure mechanisms in thermal inkjet printhead analyzed by experiments and numerical simulation. 473-478
  Electronic Edition (link) BibTeX
• C. Petit, A. Meinertzhagen, D. Zander, O. Simonetti, M. Fadlallah, T. Maurel:
  Low voltage SILC and P- and N-MOSFET gate oxide reliability. 479-485
  Electronic Edition (link) BibTeX
• D. Goguenheim, A. Bravaix, S. Gomri, J. M. Moragues, C. Monserie, N. Legrand, P. Boivin:
  Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies. 487-492
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• I. Cortés, J. Roig, D. Flores, J. Urresti, S. Hidalgo, J. Rebollo:
  Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile. 493-498
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• Alessandro Marras, Ilaria De Munari, Davide Vescovi, Paolo Ciampolini:
  Impact of gate-leakage currents on CMOS circuit performance. 499-506
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• Ramana Murthy, Y. W. Chen, A. Krishnamoorthy, X. T. Chen:
  SiLK^TM etch optimization and electrical characterization for 0.13 mum interconnects. 507-516
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• C. F. Tsang, C. K. Chang, A. Krishnamoorthy, K. Y. Ee, Y. J. Su, H. Y. Li, W. H. Li, L. Y. Wong:
  A study of post-etch wet clean on electrical and reliability performance of Cu/low k interconnections. 517-525
  Electronic Edition (link) BibTeX
• J. de Vries, J. van Delft, C. Slob:
  100 mum Pitch flip chip on foil assemblies with adhesive interconnections. 527-534
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• Ying Wang, Changchun Zhu, Chunyu Wu, Junhua Liu:
  Improving reliability of beveled power semiconductor devices passivated by SIPOS. 535-539
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• N. Nenadovic, V. Cuoco, S. J. C. H. Theeuwen, L. K. Nanver, H. Schellevis, G. Spierings, H. F. F. Jos, J. W. Slotboom:
  Electrothermal characterization of silicon-on-glass VDMOSFETs. 541-550
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• Ivan N. Ndip, Grit Sommer, Werner John, Herbert Reichl:
  Characterization of bump arrays at RF/microwave frequencies. 551-558
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• Yi Tao, Ajay P. Malshe:
  Theoretical investigation on hermeticity testing of MEMS packages based on MIL-STD-883E. 559-566
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• Tadanori Shimoto, Kazuhiro Baba, Koji Matsui, Jun Tsukano, Takehiko Maeda, Kenji Oyachi:
  Ultra-thin high-density LSI packaging substrate for advanced CSPs and SiPs. 567-574
  Electronic Edition (link) BibTeX
• Yi-Shao Lai, Tong Hong Wang:
  Verification of submodeling technique in thermomechanical reliability assessment of flip-chip package assembly. 575-582
  Electronic Edition (link) BibTeX
• L. Frisk, Eero Ristolainen:
  Flip chip attachment on flexible LCP substrate using an ACF. 583-588
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• M. J. Rizvi, Y. C. Chan, C. Bailey, H. Lu:
  Study of anisotropic conductive adhesive joint behavior under 3-point bending. 589-596
  Electronic Edition (link) BibTeX
• Hua Lu, Jesse Zhou, Rich Golek, Ming Zhou:
  Hybrid reliability assessment for packaging prototyping. 597-609
  Electronic Edition (link) BibTeX
• Dongsu Ryu, Seogweon Chang:
  Novel concepts for reliability technology. 611-622
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• L. Zhang, G. Subbarayan, B. C. Hunter, D. Rose:
  Response surface models for efficient, modular estimation of solder joint reliability in area array packages. 623-635
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• Jinwon Joo, Seungmin Cho, Bongtae Han:
  Characterization of flexural and thermo-mechanical behavior of plastic ball grid package assembly using moiré interferometry. 637-646
  Electronic Edition (link) BibTeX
• K. S. Kim, K. W. Ryu, C. H. Yu, J. M. Kim:
  The formation and growth of intermetallic compounds and shear strength at Sn-Zn solder/Au-Ni-Cu interfaces. 647-655
  Electronic Edition (link) BibTeX
• C. T. Pan, P. J. Cheng, M. F. Chen, C. K. Yen:
  Intermediate wafer level bonding and interface behavior. 657-663
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• Tuomas F. Waris, Markus P. K. Turunen, Tomi Laurila, Jorma K. Kivilahti:
  Evaluation of electrolessly deposited NiP integral resistors on flexible polyimide substrate. 665-673
  Electronic Edition (link) BibTeX
• Sam Siau, Johan De Baets, André Van Calster, Leon Heremans, Sammy Tanghe:
  Processing quality results for electroless/electroplating of high-aspect ratio plated through holes in industrially produced printed circuit boards. 675-687
  Electronic Edition (link) BibTeX
• Yi He:
  Chemical and diffusion-controlled curing kinetics of an underfill material. 689-695
  Electronic Edition (link) BibTeX
• T. Islam, C. Pramanik, H. Saha:
  Modeling, simulation and temperature compensation of porous polysilicon capacitive humidity sensor using ANN technique. 697-703
  Electronic Edition (link) BibTeX
• Sasa Radovanovic, Anne-Johan Annema, Bram Nauta:
  Bandwidth of integrated photodiodes in standard CMOS for CD/DVD applications. 705-710
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• Luke Maguire, Masud Behnia, Graham Morrison:
  Systematic evaluation of thermal interface materials - a case study in high power amplifier design. 711-725
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• Maria Teresa Sanz, Santiago Celma, Belén Calvo, Juan P. Alegre:
  MOS current divider based PGA. 727-732
  Electronic Edition (link) BibTeX

Volume 45, Numbers 5-6, May-June 2005

• Paul Hurley:
  Editorial. 767-769
  Electronic Edition (link) BibTeX
• Gerald Lucovsky, J. C. Phillips:
  Bond strain and defects at interfaces in high-k gate stacks. 770-778
  Electronic Edition (link) BibTeX
• T. Schram, L.-Å. Ragnarsson, G. Lujan, W. Deweerd, J. Chen, W. Tsai, K. Henson, R. J. P. Lander, J. C. Hooker, J. Vertommen:
  Performance improvement of self-aligned HfO₂/TaN and SiON/TaN nMOS transistors. 779-782
  Electronic Edition (link) BibTeX
• J.-P. Han, S. M. Koo, E. M. Vogel, Evgeni P. Gusev, C. D'Emic, C. A. Richter, J. S. Suehle:
  Reverse short channel effects in high-k gated nMOSFETs. 783-785
  Electronic Edition (link) BibTeX
• W. Deweerd, V. Kaushik, J. Chen, Y. Shimamoto, T. Schram, L.-Å. Ragnarsson, A. Delabie, L. Pantisano, B. Eyckens, J. W. Maes:
  Potential remedies for the V_T/V_fb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey. 786-789
  Electronic Edition (link) BibTeX
• Udo Schwalke, Yordan Stefanov:
  Process integration and nanometer-scale electrical characterization of crystalline high-k gate dielectrics. 790-793
  Electronic Edition (link) BibTeX
• G. S. Lujan, W. Magnus, L.-Å. Ragnarsson, S. Kubicek, Stefan De Gendt, Marc M. Heyns, K. De Meyer:
  Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance. 794-797
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• Vidya Kaushik, Martine Claes, Annelies Delabie, Sven Van Elshocht, Olivier Richard, Thierry Conard, Erika Rohr, Thomas Witters, Matty Caymax, Stefan De Gendt:
  Observation and characterization of defects in HfO₂ high-K gate dielectric layers. 798-801
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• Y. G. Fedorenko, L. Truong, V. V. Afanasev, A. Stesmans, Z. Zhang, Stephen A. Campbell:
  Impact of nitrogen incorporation on interface states in (100)Si/HfO₂. 802-805
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• Chadwin D. Young, Gennadi Bersuker, Yuegang Zhao, Jeff J. Peterson, Joel Barnett, George A. Brown, Jang H. Sim, Rino Choi, Byoung Hun Lee, Peter Zeitzoff:
  Probing stress effects in HfO₂ gate stacks with time dependent measurements. 806-810
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• X. Blasco, M. Nafría, X. Aymerich, J. Pétry, Wilfried Vandervorst:
  Breakdown spots of ultra-thin (EOT<1.5nm) HfO₂/SiO₂ stacks observed with enhanced - CAFM. 811-814
  Electronic Edition (link) BibTeX
• J. Pétry, Wilfried Vandervorst, L. Pantisano, Robin Degraeve:
  On the data interpretation of the C-AFM measurements in the characterization of thin insulating layers. 815-818
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• Martin Lemberger, Albena Paskaleva, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel:
  Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor. 819-822
  Electronic Edition (link) BibTeX
• L. Truong, Y. G. Fedorenko, V. V. Afanasev, A. Stesmans:
  Admittance spectroscopy of traps at the interfaces of (100)Si with Al₂O₃, ZrO₂, and HfO₂. 823-826
  Electronic Edition (link) BibTeX
• Gerald Lucovsky, J. G. Hong, C. C. Fulton, N. A. Stoute, Y. Zou, R. J. Nemanich, D. E. Aspnes, H. Ade, D. G. Schlom:
  Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra. 827-830
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• Pietro Delugas, Vincenzo Fiorentini:
  Dielectric properties of two phases of crystalline lutetium oxide. 831-833
  Electronic Edition (link) BibTeX
• Andreas Martin:
  Reliability of gate dielectrics and metal-insulator-metal capacitors. 834-840
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• G. Ribes, S. Bruyère, M. Denais, D. Roy, G. Ghibaudo:
  Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown. 841-844
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• F. Palumbo, G. Condorelli, S. Lombardo, K. L. Pey, C. H. Tung, L. J. Tang:
  Structure of the oxide damage under progressive breakdown. 845-848
  Electronic Edition (link) BibTeX
• D. Bauza, F. Rahmoune, R. Laqli, G. Ghibaudo:
  On the SILC mechanism in MOSFET's with ultrathin oxides. 849-852
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• Fernanda Irrera, Giuseppina Puzzilli, Domenico Caputo:
  A comprehensive model for oxide degradation. 853-856
  Electronic Edition (link) BibTeX
• G. Ghidini, M. Langenbuch, R. Bottini, D. Brazzelli, A. Ghetti, N. Galbiati, G. Giusto, A. Garavaglia:
  Impact of interface and bulk trapped charges on transistor reliability. 857-860
  Electronic Edition (link) BibTeX
• R. Fernández, R. Rodríguez, M. Nafría, X. Aymerich:
  Influence of oxide breakdown position and device aspect ratio on MOSFET's output characteristics. 861-864
  Electronic Edition (link) BibTeX
• E. Sleeckx, Marc Schaekers, X. Shi, E. Kunnen, B. Degroote, M. Jurczak, M. de Potter de ten Broeck, E. Augendre:
  Optimization of low temperature silicon nitride processes for improvement of device performance. 865-868
  Electronic Edition (link) BibTeX
• Robert O'Connor, Greg Hughes, Robin Degraeve, Ben Kaczer:
  Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance. 869-874
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• M. Langenbuch, R. Bottini, M. E. Vitali, G. Ghidini:
  In situ steam generation (ISSG) versus standard steam technology: impact on oxide reliability. 875-878
  Electronic Edition (link) BibTeX
• A. Pecora, L. Maiolo, A. Bonfiglietti, M. Cuscunà, F. Mecarini, L. Mariucci, G. Fortunato, N. D. Young:
  Silicon dioxide deposited by ECR-PECVD for low-temperature Si devices processing. 879-882
  Electronic Edition (link) BibTeX
• C. Trapes, D. Goguenheim, A. Bravaix:
  Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides. 883-886
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• J. Yang, J. J. Kopanski, A. Postula, M. Bialkowski:
  Experimental investigation of the dielectric-semiconductor interface with scanning capacitance microscopy. 887-890
  Electronic Edition (link) BibTeX
• D. Zander:
  Comparison of interfaces states density through their energy distribution and LVSILC induced by uniform and localized injections in 2.3nm thick oxides. 891-894
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• E. Spitale, D. Corso, I. Crupi, S. Lombardo, C. Gerardi:
  Improvement of the P/E window in nanocrystal memories by the use of high-k materials in the control dielectric. 895-898
  Electronic Edition (link) BibTeX
• Josep Carreras, B. Garrido, J. R. Morante:
  Improved charge injection in Si nanocrystal non-volatile memories. 899-902
  Electronic Edition (link) BibTeX
• V. I. Turchanikov, A. N. Nazarov, V. S. Lysenko, Josep Carreras, B. Garrido:
  Charge storage peculiarities in poly-Si-SiO₂-Si memory devices with Si nanocrystals rich SiO₂. 903-906
  Electronic Edition (link) BibTeX
• Fernanda Irrera, Giuseppina Puzzilli:
  Crested barrier in the tunnel stack of non-volatile memories. 907-910
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• N. Baboux, C. Plossu, P. Boivin:
  Dynamic Fowler-Nordheim injection in EEPROM tunnel oxides at realistic time scales. 911-914
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• R. Rölver, O. Winkler, M. Först, B. Spangenberg, H. Kurz:
  Light emission from Si/SiO₂ superlattices fabricated by RPECVD. 915-918
  Electronic Edition (link) BibTeX
• C. M. Garner, G. Kloster, G. Atwood, L. Mosley, A. C. Palanduz:
  Challenges for dielectric materials in future integrated circuit technologies. 919-924
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• E. Deloffre, L. Montès, G. Ghibaudo, S. Bruyère, S. Blonkowski, S. Bécu, M. Gros-Jean, S. Crémer:
  Electrical properties in low temperature range (5K-300K) of Tantalum Oxide dielectric MIM capacitors. 925-928
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• J. M. Decams, H. Guillon, C. Jiménez, M. Audier, J. P. Sénateur, C. Dubourdieu, O. Cadix, B. J. O'Sullivan, M. Modreanu, P. K. Hurley:
  Electrical characterization of HfO₂ films obtained by UV assisted injection MOCVD. 929-932
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• V. Mikhelashvili, B. Meyler, J. Shneider, O. Kreinin, G. Eisenstein:
  Electrical properties of MIS capacitor using low temperature electron beam gun - evaporated HfAlO dielectrics. 933-936
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• V. Capodieci, F. Wiest, T. Sulima, J. Schulze, I. Eisele:
  Examination and evaluation of La₂O₃ as gate dielectric for sub-100nm CMOS and DRAM technology. 937-940
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• A. Sibai, S. Lhostis, Y. Rozier, O. Salicio, S. Amtablian, C. Dubois, J. Legrand, J. P. Sénateur, M. Audier, L. Hubert-Pfalzgraff:
  Characterization of crystalline MOCVD SrTiO₃ films on SiO₂/Si(100). 941-944
  Electronic Edition (link) BibTeX
• U. Weber, M. Schumacher, J. Lindner, O. Boissière, P. Lehnen, S. Miedl, P. K. Baumann, G. Barbar, C. Lohe, T. McEntee:
  AVD^® technology for deposition of next generation devices. 945-948
  Electronic Edition (link) BibTeX
• S. Dueñas, H. Castán, H. García, J. Barbolla, K. Kukli, J. Aarik, M. Ritala, M. Leskelä:
  Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition. 949-952
  Electronic Edition (link) BibTeX
• M. C. Lemme, J. K. Efavi, H. D. B. Gottlob, T. Mollenhauer, T. Wahlbrink, H. Kurz:
  Comparison of metal gate electrodes on MOCVD HfO₂. 953-956
  Electronic Edition (link) BibTeX
• Q. Fang, I. Liaw, M. Modreanu, P. K. Hurley, I. W. Boyd:
  Post deposition UV-induced O₂ annealing of HfO₂ thin films. 957-960
  Electronic Edition (link) BibTeX
• Fu-Chien Chiu, Shun-An Lin, Joseph Ya-min Lee:
  Electrical properties of metal-HfO₂-silicon system measured from metal-insulator-semiconductor capacitors and metal-insulator-semiconductor field-effect transistors using HfO₂ gate dielectric. 961-964
  Electronic Edition (link) BibTeX
• Y. Lu, Octavian Buiu, Steve Hall, P. K. Hurley:
  Optical and electrical characterization of hafnium oxide deposited by MOCVD. 965-968
  Electronic Edition (link) BibTeX
• Ming-Tsong Wang, Tsung-Hong Wang, Joseph Ya-min Lee:
  Electrical conduction mechanism in high-dielectric-constant ZrO₂ thin films. 969-972
  Electronic Edition (link) BibTeX
• James Prendergast, Eoin O'Driscoll, Ed Mullen:
  Investigation into the correct statistical distribution for oxide breakdown over oxide thickness range. 973-977
  Electronic Edition (link) BibTeX
• S. Dueñas, H. Castán, H. García, J. Barbolla, E. San Andrés, I. Mártil, G. González-Díaz:
  On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiN_x/SiO₂/Si fabricated by ECR-CVD. 978-981
  Electronic Edition (link) BibTeX
• E. Halova, S. Alexandrova, A. Szekeres, M. Modreanu:
  LPCVD-silicon oxynitride films: interface properties. 982-985
  Electronic Edition (link) BibTeX
• V. Em. Vamvakas, D. Davazoglou:
  Influence of the annealing temperature on the IR properties of SiO₂ films grown from SiH₄+O₂. 986-989
  Electronic Edition (link) BibTeX
• M. Vasilopoulou, A. M. Douvas, D. Kouvatsos, P. Argitis, D. Davazoglou:
  Characterization of various insulators for possible use as low-k dielectrics deposited at temperatures below 200degreeC. 990-993
  Electronic Edition (link) BibTeX
• Giacomo Barletta, Giuseppe Currò:
  Junction leakage current degradation under high temperature reverse-bias stress induced by band-defect-band tunnelling in power VDMOS. 994-999
  Electronic Edition (link) BibTeX
• S. A. Rushworth, L. M. Smith, A. J. Kingsley, R. Odedra, R. Nickson, P. Hughes:
  Vapour pressure measurement of low volatility precursors. 1000-1002
  Electronic Edition (link) BibTeX
• P. C. Juan, H. C. Chou, J. Y. M. Lee:
  The effect of electrode material on the electrical conduction of metal-Pb(Zr_0.53Ti_0.47)O₃-metal thin film capacitors. 1003-1006
  Electronic Edition (link) BibTeX
• S. Beckx, M. Demand, S. Locorotondo, K. Henson, M. Claes, V. Paraschiv, D. Shamiryan, P. Jaenen, W. Boullart, S. Degendt:
  Implementation of high-k and metal gate materials for the 45nm node and beyond: gate patterning development. 1007-1011
  Electronic Edition (link) BibTeX
• Mile K. Stojcev:
  Testing Static Random Access Memories: Defects, Fault Models and Test Patterns, Said Hamdioui, Kluwer Academic Publishers, Boston, 2004, Hardcover, pp 221, plus XX, ISBN 1-4020-7752-1. 1012-1013
  Electronic Edition (link) BibTeX
• Mile K. Stojcev:
  Behrouz A. Forouzan, Data Communications and Networking Third edition, McGraw-Hill Higher Education, Boston (2003) ISBN 0-07-251584-8 Softcover, pp 973, plus XXXIV. 1014-1016
  Electronic Edition (link) BibTeX
• Mile K. Stojcev:
  Boris Murmann, Bernhard Boser, Digitally Assisted Pipeline ADCs: Theory and Implementation, Kluwer Academic Publishers, Boston, 2004, ISBN 1-4020-7839-0. Hardcover, pp 155, plus XX. 1017-1018
  Electronic Edition (link) BibTeX
• Mile K. Stojcev:
  Carl Hamacher, Zvonko Vranesic, Safwat Zaky, Computer Organization, Fifth edition, 2004, ISBN 0-07-112214-4. Hardcover, pp 805, plus XX. 1019-1020
  Electronic Edition (link) BibTeX

Volume 45, Numbers 7-8, July-August 2005

• Douglas Brisbin, Andy Strachan, Prasad Chaparala:
  Optimizing the hot carrier reliability of N-LDMOS transistor arrays. 1021-1032
  Electronic Edition (link) BibTeX
• D. Q. Kelly, S. Dey, D. Onsongo, S. K. Banerjee:
  Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs. 1033-1040
  Electronic Edition (link) BibTeX
• Wataru Mizubayashi, Naoki Yasuda, Kenji Okada, Hiroyuki Ota, Hirokazu Hisamatsu, Kunihiko Iwamoto, Koji Tominaga, Katsuhiko Yamamoto, Tsuyoshi Horikawa, Toshihide Nabatame:
  Carrier separation analysis for clarifying carrier conduction and degradation mechanisms in high-k stack gate dielectrics. 1041-1050
  Electronic Edition (link) BibTeX
• Se Jong Rhee, Jack C. Lee:
  Threshold voltage instability characteristics of HfO₂ dielectrics n-MOSFETs. 1051-1060
  Electronic Edition (link) BibTeX
• M. H. Lin, Y. L. Lin, K. P. Chang, K. C. Su, Tahui Wang:
  Copper interconnect electromigration behaviors in various structures and lifetime improvement by cap/dielectric interface treatment. 1061-1078
  Electronic Edition (link) BibTeX
• Guotao Wang, Paul S. Ho, Steven Groothuis:
  Chip-packaging interaction: a critical concern for Cu/low k packaging. 1079-1093
  Electronic Edition (link) BibTeX
• Andrea Chimenton, Piero Olivo:
  Reliability of erasing operation in NOR-Flash memories. 1094-1108
  Electronic Edition (link) BibTeX
• H. Aono, E. Murakami, K. Okuyama, A. Nishida, M. Minami, Y. Ooji, K. Kubota:
  Modeling of NBTI saturation effect and its impact on electric field dependence of the lifetime. 1109-1114
  Electronic Edition (link) BibTeX
• Shyue Seng Tan, Tu Pei Chen, Lap Chan:
  Dynamic NBTI lifetime model for inverter-like waveform. 1115-1118
  Electronic Edition (link) BibTeX
• Yao-Jen Lee, Tien-Sheng Chao, Tiao-Yuan Huang:
  High voltage applications and NBTI effects of DT-pMOSFETS with reverse Schottky substrate contacts. 1119-1123
  Electronic Edition (link) BibTeX
• Albena Paskaleva, Anton J. Bauer, Martin Lemberger:
  Conduction mechanisms and an evidence for phonon-assisted conduction process in thin high-k Hf_xTi_ySi_zO films. 1124-1133
  Electronic Edition (link) BibTeX
• H. Y. Li, Y. J. Su, C. F. Tsang, S. M. Sohan, V. N. Bliznetsov, L. Zhang:
  Process improvement of 0.13mum Cu/Low K (Black Diamond^TM) dual damascene interconnection. 1134-1143
  Electronic Edition (link) BibTeX
• C. S. Ho, Kuo-Yin Huang, Ming Tang, Juin J. Liou:
  An analytical threshold voltage model of NMOSFETs with hot-carrier induced interface charge effect. 1144-1149
  Electronic Edition (link) BibTeX
• Y. J. Song, H. J. Joo, S. K. Kang, H. H. Kim, J. H. Park, Y. M. Kang, E. Y. Kang, S. Y. Lee, K. Kim:
  Electrical properties of highly reliable 32Mb FRAM with advanced capacitor technology. 1150-1153
  Electronic Edition (link) BibTeX
• A. R. Saha, S. Chattopadhyay, G. K. Dalapati, S. K. Nandi, C. K. Maiti:
  An investigation of electrical and structural properties of Ni-germanosilicided Schottky diode. 1154-1160
  Electronic Edition (link) BibTeX
• M. Estrada, A. Cerdeira, L. Resendiz, Benjamín Iñiguez, L. F. Marzal, J. Pallares:
  Effect of localized traps on the anomalous behavior of the transconductance in nanocrystalline TFTs. 1161-1166
  Electronic Edition (link) BibTeX
• Nicolas Valdaperez, Jean-Marc Routoure, Daniel Bloyet, Régis Carin, Serge Bardy:
  Size effects on the DC characteristics and low frequency noise of double polysilicon NPN bipolar transistors. 1167-1173
  Electronic Edition (link) BibTeX
• Peter Jacob, Uwe Thiemann, Joachim C. Reiner:
  Electrostatic discharge directly to the chip surface, caused by automatic post-wafer processing. 1174-1180
  Electronic Edition (link) BibTeX
• J. Urresti, S. Hidalgo, D. Flores, J. Roig, I. Cortés, J. Rebollo:
  Lateral punch-through TVS devices for on-chip protection in low-voltage applications. 1181-1186
  Electronic Edition (link) BibTeX
• Martin Sauter:
  Determination of self-heating and thermal resistance in polycrystalline and bulk silicon resistors by DC measurements. 1187-1193
  Electronic Edition (link) BibTeX
• Walter Smetana, Roland Reicher, H. Homolka:
  Improving reliability of thick film initiators for automotive applications based on FE-analyses. 1194-1201
  Electronic Edition (link) BibTeX
• H. Niemiec, A. Bulgheroni, M. Caccia, P. Grabiec, M. Grodner, M. Jastrzab, W. Kucewicz, K. Kucharski, S. Kuta, J. Marczewski:
  Monolithic active pixel sensor realized in SOI technology - concept and verification. 1202-1207
  Electronic Edition (link) BibTeX
• Masayuki Kitajima, Tadaaki Shono:
  Reliability study of new SnZnAl lead-free solders used in CSP packages. 1208-1214
  Electronic Edition (link) BibTeX
• Xiaowu Zhang, E. H. Wong, Ranjan Rajoo, Mahadevan K. Iyer, J. F. J. M. Caers, X. J. Zhao:
  Development of process modeling methodology for flip chip on flex interconnections with non-conductive adhesives. 1215-1221
  Electronic Edition (link) BibTeX
• Y. F. Yao, B. Njoman, K. H. Chua, T. Y. Lin:
  New encapsulation development for fine pitch IC devices. 1222-1229
  Electronic Edition (link) BibTeX
• Wenming Zhang, Guang Meng, Hongguang Li:
  Electrostatic micromotor and its reliability. 1230-1242
  Electronic Edition (link) BibTeX
• Sheng-Jen Hsieh, Sung-Ling Huang:
  A methodology for microcontroller signal frequency stress prediction. 1243-1251
  Electronic Edition (link) BibTeX
• M. Serényi, J. Betko, Á. Nemcsics, N. Q. Khanh, D. K. Basa, M. Morvic:
  Study on the RF Sputtered hydrogenated amorphous silicon-germanium thin films. 1252-1256
  Electronic Edition (link) BibTeX
• G. Janczyk:
  Bipolar mechanisms present in short channel SOI-MOSFET transistors. 1257-1263
  Electronic Edition (link) BibTeX
• Mansour Jaragh, Ahmed Hasswa:
  Implementation, analysis and performance evaluation of the IRP replacement policy. 1264-1269
  Electronic Edition (link) BibTeX
• Mile K. Stojcev:
  Design of Energy-Efficient Application-Specific Instruction Set Processors (ASIPs), Tilman Glokler, Heinrich Meyr, Kluwer Academic Publishers, Boston, 2004, ISBN 1-4020-7730-0, Hardcover, pp 234, plus XX. 1270-1271
  Electronic Edition (link) BibTeX
• Mile K. Stojcev:
  Digital Computer Arithmetic Datapath Design Using Verilog HDL, James E. Stine, Kluwer Academic Publishers, Boston, 2004, ISBN 1-4020-7710-6. Hardcover, pp 180, plus XI. 1272
  Electronic Edition (link) BibTeX
• Mile K. Stojcev:
  Alberto Leon-Garcia, Indra Widjaja, Communication Networks: Fundamental Concepts and Key Architectures, Second edition, McGraw Hill Higher Education, Boston, 2004, ISBN 0-07-119848-2. Hardcover, pp 900, plus XXVII. 1273-1274
  Electronic Edition (link) BibTeX

Volume 45, Numbers 9-11, September-November 2005

• N. Labat:
  Editorial. 1275-1276
  Electronic Edition (link) BibTeX
• Etienne Sicard, J. M. Dienot:
  Issues in electromagnetic compatibility of integrated circuits: emission and susceptibility. 1277-1284
  Electronic Edition (link) BibTeX
• A. London:
  Basic Principles for Managing Foundry Programs. 1285-1292
  Electronic Edition (link) BibTeX
• Mauro Ciappa:
  Lifetime prediction on the base of mission profiles. 1293-1298
  Electronic Edition (link) BibTeX
• Y.-L. Li, Zs. Tökei, Ph. Roussel, Guido Groeseneken, Karen Maex:
  Layout dependency induced deviation from Poisson area scaling in BEOL dielectric reliability. 1299-1304
  Electronic Edition (link) BibTeX
• Changsoo Hong, Linda S. Milor, Munkang Choi, Tom Lin:
  Study of Area Scaling Effect on Integrated Circuit Reliability Based on Yield Models. 1305-1310
  Electronic Edition (link) BibTeX
• Shih-Hung Chen, Ming-Dou Ker:
  Investigation on seal-ring rules for IC product reliability in 0.25-mum CMOS technology. 1311-1316
  Electronic Edition (link) BibTeX
• J. Y. Seo, K. J. Lee, Y. S. Kim, S. Y. Lee, S. J. Hwang, C. K. Yoon:
  Reliability for Recessed Channel Structure n-MOSFET. 1317-1320
  Electronic Edition (link) BibTeX
• G. Cassanelli, G. Mura, F. Cesaretti, Massimo Vanzi, Fausto Fantini:
  Reliability predictions in electronic industrial applications. 1321-1326
  Electronic Edition (link) BibTeX
• A. Kerlain, V. Mosser:
  Robust, versatile, direct low-frequency noise characterization method for material/process quality control using cross-shaped 4-terminal devices. 1327-1330
  Electronic Edition (link) BibTeX
• Ling-Chang Hu, An-Chi Kang, Eric Chen, J. R. Shih, Yao-Feng Lin, Kenneth Wu, Ya-Chin King:
  Gate stress effect on low temperature data retention characteristics of split-gate flash memories. 1331-1336
  Electronic Edition (link) BibTeX
• G. Ghidini, C. Capolupo, G. Giusto, A. Sebastiani, B. Stragliati, M. Vitali:
  Tunnel oxide degradation under pulsed stress. 1337-1342
  Electronic Edition (link) BibTeX
• Ninoslav Stojadinovic, D. Dankovic, S. Djoric-Veljkovic, V. Davidovic, I. Manic, S. Golubovic:
  Negative bias temperature instability mechanisms in p-channel power VDMOSFETs. 1343-1348
  Electronic Edition (link) BibTeX
• Yannick Rey-Tauriac, J. Badoc, B. Reynard, R. A. Bianchi, D. Lachenal, A. Bravaix:
  Hot-carrier reliability of 20V MOS transistors in 0.13 mum CMOS technology. 1349-1354
  Electronic Edition (link) BibTeX
• M. Nelhiebel, J. Wissenwasser, Th. Detzel, A. Timmerer, E. Bertagnolli:
  Hydrogen-related influence of the metallization stack on characteristics and reliability of a trench gate oxide. 1355-1359
  Electronic Edition (link) BibTeX
• J. Y. Seo, K. J. Lee, S. Y. Lee, S. J. Hwang, C. K. Yoon:
  Dielectric reliability of stacked Al₂O₃-HfO₂ MIS capacitors with cylinder type for improving DRAM data retention characteristics. 1360-1364
  Electronic Edition (link) BibTeX
• E. Miranda, J. Molina, Y. Kim, H. Iwai:
  Degradation of high-K LA₂O₃ gate dielectrics using progressive electrical stress. 1365-1369
  Electronic Edition (link) BibTeX
• A. Bravaix, D. Goguenheim, M. Denais, V. Huard, C. R. Parthasarathy, F. Perrier, N. Revil, E. Vincent:
  Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. 1370-1375
  Electronic Edition (link) BibTeX
• K. Hayama, K. Takakura, H. Ohyama, S. Kuboyama, S. Matsuda, J. M. Rafí, A. Mercha, E. Simoen, C. Claeys:
  Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs. 1376-1381
  Electronic Edition (link) BibTeX
• Enjun Xiao, P. P. Ghosh, C. Yu, J. S. Yuan:
  Hot carrier and soft breakdown effects on LNA performance for ultra wideband communications. 1382-1385
  Electronic Edition (link) BibTeX
• M. A. Exarchos, G. J. Papaioannou, J. Jomaah, F. Balestra:
  The impact of static and dynamic degradation on SOI "smart-cut" floating body MOSFETs. 1386-1389
  Electronic Edition (link) BibTeX
• L. Aguilera, M. Porti, M. Nafría, X. Aymerich:
  Pre- and post-BD electrical conduction of stressed HfO₂/SiO₂ MOS gate stacks observed at the nanoscale. 1390-1393
  Electronic Edition (link) BibTeX
• Jin-Wook Lee, Gyoung Ho Buh, Guk-Hyon Yon, Tai-su Park, Yu Gyun Shin, U-In Chung, Joo Tae Moon:
  Elimination of surface state induced edge transistors in high voltage NMOSFETs for flash memory devices. 1394-1397
  Electronic Edition (link)