Microelectronics Reliability, Volume 47

Volume 47, Number 1, January 2007

• Hei Wong, V. Filip, C. K. Wong, P. S. Chung:
  Silicon integrated photonics begins to revolutionize. 1-10
  
• Viktor Sverdlov, Hans Kosina, Siegfried Selberherr:
  Modeling current transport in ultra-scaled field-effect transistors. 11-19
  
• T. Hattori, H. Nohira, S. Shinagawa, M. Hori, M. Kase, T. Maruizumi:
  Angle-resolved photoelectron spectroscopy on gate insulators. 20-26
  
• Ming-Dou Ker, Wei-Jen Chang:
  Overview on ESD protection design for mixed-voltage I/O interfaces with high-voltage-tolerant power-rail ESD clamp circuits in low-voltage thin-oxide CMOS technology. 27-35
  

• Sergey Shaimeev, Vladimir Gritsenko, Kaupo Kukli, Hei Wong, Eun-Hong Lee, Chungwoo Kim:
  Single band electronic conduction in hafnium oxide prepared by atomic layer deposition. 36-40
  
• C. Leyris, F. Martinez, A. Hoffmann, M. Valenza, J. C. Vildeuil:
  N-MOSFET oxide trap characterization induced by nitridation process using RTS noise analysis. 41-45
  
• Y. Fu, H. Wong, J. J. Liou:
  Characterization and modeling of flicker noise in junction field-effect transistor with source and drain trench isolation. 46-50
  
• Milan Jevtic, Jovan M. Hadzi-Vukovic:
  Study of the electrical cycling stressed large area Schottky diodes using I-V and noise measurements. 51-58
  
• M. A. Belaïd, K. Ketata, M. Gares, K. Mourgues, M. Masmoudi, J. Marcon:
  Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests. 59-64
  
• Giovanna Sozzi, Roberto Menozzi:
  A review of the use of electro-thermal simulations for the analysis of heterostructure FETs. 65-73
  
• Hirotaka Komoda, Chie Moritani, Kazutaka Takahashi, Heiji Watanabe, Kiyoshi Yasutake:
  Sample tilting technique for preventing electrostatic discharge during high-current FIB gas-assisted etching with XeF₂. 74-81
  
• Hongfei Liu, Alin Hou, Hongbo Zhang, Daming Zhang, Maobin Yi:
  A voltage calibration technique of electro-optic probing for characterization internal to IC's chip. 82-87
  
• Yuki Fukuda, Michael D. Osterman, Michael G. Pecht:
  The impact of electrical current, mechanical bending, and thermal annealing on tin whisker growth. 88-92
  
• J. Varghese, A. Dasgupta:
  Test methodology for durability estimation of surface mount interconnects under drop testing conditions. 93-103
  
• Yi-Shao Lai, Tong Hong Wang:
  Optimal design towards enhancement of board-level thermomechanical reliability of wafer-level chip-scale packages. 104-110
  
• Yi-Shao Lai, Tong Hong Wang, Han-Hui Tsai, Ming-Hwa R. Jen:
  Cyclic bending reliability of wafer-level chip-scale packages. 111-117
  
• J. G. Lee, K. N. Subramanian:
  Effects of TMF heating rates on damage accumulation and resultant mechanical behavior of Sn-Ag based solder joints. 118-131
  
• Stoyan Stoyanov, Robert W. Kay, Chris Bailey, Marc P. Y. Desmulliez:
  Computational modelling for reliable flip-chip packaging at sub-100mum pitch using isotropic conductive adhesives. 132-141
  

Volume 47, Numbers 2-3, February-March 2007

• Artur Wymyslowski, Bart Vandevelde, Dag Andersson:
  Thermal, mechanical and multi-physics simulation and experiments in micro-electronics and micro-systems. 159-160
  
• F. Cacho, S. Orain, G. Cailletaud, H. Jaouen:
  A constitutive single crystal model for the silicon mechanical behavior: Applications to the stress induced by silicided lines and STI in MOS technologies. 161-167
  
• Stephan Schoenfelder, Matthias Ebert, Christof Landesberger, Karlheinz Bock, Jörg Bagdahn:
  Investigations of the influence of dicing techniques on the strength properties of thin silicon. 168-178
  
• M. A. J. van Gils, O. van der Sluis, G. Q. Zhang, J. H. J. Janssen, R. M. J. Voncken:
  Analysis of Cu/low-k bond pad delamination by using a novel failure index. 179-186
  
• Mike Roellig, Rainer Dudek, Steffen Wiese, Bjoern Boehme, Berhard Wunderle, Klaus-Jürgen Wolter, Bernd Michel:
  Fatigue analysis of miniaturized lead-free solder contacts based on a novel test concept. 187-195
  
• Chang-Chun Lee, Chien-Chen Lee, Hsiao-Tung Ku, Shu-Ming Chang, Kuo-Ning Chiang:
  Solder joints layout design and reliability enhancements of wafer level packaging using response surface methodology. 196-204
  
• W. D. van Driel, A. Mavinkurve, M. A. J. van Gils, G. Q. Zhang:
  Advanced structural similarity rules for the BGA package family. 205-214
  
• Nele Van Steenberge, Paresh Limaye, Geert Willems, Bart Vandevelde, Inge Schildermans:
  Analytical and finite element models of the thermal behavior for lead-free soldering processes in electronic assembly. 215-222
  
• Steffen Wiese, Klaus-Jürgen Wolter:
  Creep of thermally aged SnAgCu-solder joints. 223-232
  
• D. G. Yang, K. M. B. Jansen, L. J. Ernst, G. Q. Zhang, H. J. L. Bressers, J. H. J. Janssen:
  Effect of filler concentration of rubbery shear and bulk modulus of molding compounds. 233-239
  
• C. van't Hof, K. M. B. Jansen, G. Wisse, L. J. Ernst, D. G. Yang, G. Q. Zhang, H. J. L. Bressers:
  Novel shear tools for viscoelastic characterization of packaging polymers. 240-247
  
• V. Gonda, K. M. B. Jansen, L. J. Ernst, J. den Toonder, G. Q. Zhang:
  Micro-mechanical testing of SiLK by nanoindentation and substrate curvature techniques. 248-251
  
• M. Spraul, W. Nüchter, A. Möller, B. Wunderle, B. Michel:
  Reliability of SnPb and Pb-free flip-chips under different test conditions. 252-258
  
• Bart Vandevelde, Mario Gonzalez, Paresh Limaye, Petar Ratchev, Eric Beyne:
  Thermal cycling reliability of SnAgCu and SnPb solder joints: A comparison for several IC-packages. 259-265
  
• C. Andersson, D. R. Andersson, P. E. Tegehall, Johan Liu:
  Effect of different temperature cycling profiles on the crack initiation and propagation of Sn-3.5Ag wave soldered solder joints. 266-272
  
• M. A. J. van Gils, W. D. van Driel, G. Q. Zhang, H. J. L. Bressers, R. B. R. van Silfhout, X. J. Fan, J. H. J. Janssen:
  Virtual qualification of moisture induced failures of advanced packages. 273-279
  
• A. Wymyslowski, W. D. van Driel, J. van de Peer, N. Tzannetakis, G. Q. Zhang:
  Advanced numerical prototyping methods in modern engineering applications - Optimisation for micro-electronic package reliability. 280-289
  
• H. J. L. Bressers, W. D. van Driel, K. M. B. Jansen, L. J. Ernst, G. Q. Zhang:
  Correlation between chemistry of polymer building blocks and microelectronics reliability. 290-294
  
• S. Orain, J.-C. Barbé, X. Federspiel, P. Legallo, H. Jaouen:
  FEM-based method to determine mechanical stress evolution during process flow in microelectronics, application to stress-voiding. 295-301
  
• Mats Lindgren, Ilja Belov, Magnus Törnvall, Peter Leisner:
  Application of simulation-based decision making in product development of an RF module. 302-309
  
• D. G. Yang, K. M. B. Jansen, L. J. Ernst, G. Q. Zhang, W. D. van Driel, H. J. L. Bressers, J. H. J. Janssen:
  Numerical modeling of warpage induced in QFN array molding process. 310-318
  
• Kirsten Weide-Zaage, David Dalleau, Yves Danto, Hélène Frémont:
  Dynamic void formation in a DD-copper-structure with different metallization geometry. 319-325
  

• Andrzej Dziedzic, Jan Felba:
  Polytronic 2005. 327
  
• James E. Morris:
  Isotropic conductive adhesives: Future trends, possibilities and risks. 328-330
  
• Jana Kolbe, Andreas Arp, Francesco Calderone, Edouard Marc Meyer, Wilhelm Meyer, Helmut Schaefer, Manuela Stuve:
  Inkjettable conductive adhesive for use in microelectronics and microsystems technology. 331-334
  
• Ryszard Kisiel, Jan Felba, Janusz Borecki, Andrzej Moscicki:
  Problems of PCB microvias filling by conductive paste. 335-341
  
• Tomasz Falat, Artur Wymyslowski, Jana Kolbe:
  Numerical approach to characterization of thermally conductive adhesives. 342-346
  
• Péter Gordon, Bálint Balogh, Bálint Sinkovics:
  Thermal simulation of UV laser ablation of polyimide. 347-353
  
• Andrzej Dziedzic:
  Carbon/polyesterimide thick-film resistive composites - Experimental characterization and theoretical analysis of physicochemical, electrical and stability properties. 354-362
  
• Marika P. Immonen, Mikko Karppinen, Jorma K. Kivilahti:
  Investigation of environmental reliability of optical polymer waveguides embedded on printed circuit boards. 363-371
  
• J. Tardy, M. Erouel, A. L. Deman, A. Gagnaire, V. Teodorescu, M. G. Blanchin, B. Canut, A. Barau, M. Zaharescu:
  Organic thin film transistors with HfO₂ high-k gate dielectric grown by anodic oxidation or deposited by sol-gel. 372-377
  

• T. K. Chiang:
  A new two-dimensional threshold voltage model for cylindrical, fully-depleted, surrounding-gate (SG) MOSFETs. 379-383
  

• F. Schwierz, C. Schippel:
  Performance trends of Si-based RF transistors. 384-390
  

• X. Zou, J. P. Xu, C. X. Li, P. T. Lai, W. B. Chen:
  A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer. 391-394
  
• W. W. (Bill) Abadeer:
  Effect of stress voltages on voltage acceleration and lifetime projections for ultra-thin gate oxides. 395-400
  
• C. Petit, D. Zander:
  Low voltage stress induced leakage current and time to breakdown in ultra-thin (1.2-2.3nm) oxides. 401-408
  
• Kazufumi Watanabe, Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi:
  Examination of degradation mechanism due to negative bias temperature stress from a perspective of hole energy for accurate lifetime prediction. 409-418
  
• You-Lin Wu, Shi-Tin Lin, Tsung-Min Chang, Juin J. Liou:
  Reliability study of ultrathin oxide films subject to irradiation-then-stress treatment using conductive atomic force microscopy. 419-421
  
• Z. Khatir, S. Lefebvre, F. Saint-Eve:
  Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices. 422-428
  
• W. S. Lau, P. W. Qian, Taejoon Han, Nathan P. Sandler, S. T. Che, S. E. Ang, C. H. Tung, T. T. Sheng:
  Evidence that N₂O is a stronger oxidizing agent than O₂ for both Ta₂O₅ and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si. 429-433
  
• Jianyin Zhao, Fang Liu:
  Reliability assessment of the metallized film capacitors from degradation data. 434-436
  
• B. Vermeersch, Gilbert De Mey:
  Influence of substrate thickness on thermal impedance of microelectronic structures. 437-443
  
• J. W. C. de Vries, M. Y. Jansen, W. D. van Driel:
  On the difference between thermal cycling and thermal shock testing for board level reliability of soldered interconnections. 444-449
  
• Jing-en Luan, Tong Yan Tee, Eric Pek, Chwee Teck Lim, Zhaowei Zhong:
  Dynamic responses and solder joint reliability under board level drop test. 450-460
  
• Hamid R. Zarandi, Seyed Ghassem Miremadi:
  Dependability evaluation of Altera FPGA-based embedded systems subjected to SEUs. 461-470
  
• Maria Teresa Sanz, Santiago Celma, Belén Calvo:
  Low-distortion 4th order programmable Butterworth filter. 471-476