Volume 4, Number 1, January 1985
: Finite-Element Simulation of Local Oxidation of Silicon.
Jonathan B. Rosenberg
: Geographical Data Structures Compared: A Study of Data Structures Supporting Region Queries.
, J. P. Krusius
: Technology Independent Device Modeling for Simulation of Integrated Circuits for FET Technologies.
A. M. Mazzone
: Three-Dimensional Monte Carlo Simulations--Part II: Recoil Phenomena.
Volume 4, Number 2, April 1985
Volume 4, Number 3, July 1985
: Modeling of Lithography Related Yield Losses for CAD of VLSI Circuits.
: A Method of Improving the Terminal Assignment in the Channel Routing for Gate Arrays.
: A Physical and SPICE-Compatible Model for the MOS Depletion Device.
Volume 4, Number 4, October 1985
M. D. Giles
, J. F. Gibbons
: Calculation of Channeling Effects During Ion Implantation Using the Boltzmann Transport Equation.
A. M. Mazzone
: Monte Carlo Methods in Defects Migration -- Spontaneous Annealing of Damage Induced by Ion Implantation.
: Monte Carlo Calculation of One- and Two-Dimensional Particle and Damage Distributions for Ion-Implanted Dopants in Silicon.
Steven E. Laux
: Techniques for Small-Signal Analysis of Semiconductor Devices.
Joseph W. Jerome
: The Role of Semiconductor Device Diameter and Energy-Band Bending in Convergence of Picard Iteration for Gummel's Map.
, F. Van de Wiele
: Current Lines and Accurate Contact Current Evaluation in 2-D Numerical Simulation of Semiconductor Devices.
A. S. Shieh
: On the Solution of Coupled System of PDE by a Multigrid Method.
: A Monte Carlo Particle Study of the Intrinsic Noise Figure in GaAs MESFET's.
M.-D. D. Huang
: The Constant-Flow Patch Test -- A Unique Guideline for the Evaluation of Discretization Schemes for the Current Continuity Equations.