Michael L. Alles

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	2012
j3		Nadia Rezzak, Pierre Maillard, Ronald D. Schrimpf, Michael L. Alles, Daniel M. Fleetwood, Yanfeng Albert Li: The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies. Microelectronics Reliability 52(11): 2521-2526 (2012)
	2011
j2		Nadia Rezzak, Michael L. Alles, Ronald D. Schrimpf, Sarah Kalemeris, Lloyd W. Massengill, John Sochacki, Hugh J. Barnaby: The sensitivity of radiation-induced leakage to STI topology and sidewall doping. Microelectronics Reliability 51(5): 889-894 (2011)
	2008
j1		Alexander I. Fedoseyev, Marek Turowski, Michael L. Alles, Robert A. Weller: Accurate numerical models for simulation of radiation events in nano-scale semiconductor devices. Mathematics and Computers in Simulation 79(4): 1086-1095 (2008)
c1		Alexander I. Fedoseyev, Marek Turowski, Ashok Raman, Michael L. Alles, Robert A. Weller: Multiscale Numerical Models for Simulation of Radiation Events in Semiconductor Devices. ICCS (2) 2008: 281-290

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