 | 2007 |
| j3 |  | |
| j2 |  | Hideaki Kurata, Satoshi Noda, Yoshitaka Sasago, Kazuo Otsuga, Tsuyoshi Arigane, Tetsufumi Kawamura, Takashi Kobayashi, Hitoshi Kume, Kazuki Homma, Teruhiko Ito, Yoshinori Sakamoto, Masahiro Shimizu, Yoshinori Ikeda, Osamu Tsuchiya, Kazunori Furusawa: A 126 mm2 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology. IEICE Transactions 90-C(11): 2146-2156 (2007) |
| 2006 |
| j1 |  | Hideaki Kurata, Shunichi Saeki, Takashi Kobayashi, Yoshitaka Sasago, Tsuyoshi Arigane, Keiichi Yoshida, Yoshinori Takase, Takayuki Yoshitake, Osamu Tsuchiya, Yoshinori Ikeda, Shunichi Narumi, Michitaro Kanamitsu, Kazuto Izawa, Kazunori Furusawa: A 130-nm CMOS 95-mm2 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming Throughput. IEICE Transactions 89-C(10): 1469-1479 (2006) |