Ph. Boivin

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	2001
c2		Rachid Bouchakour, N. Harabech, P. Canet, Ph. Boivin, J. M. Mirabel: Modeling of a floating-gate EEPROM cell using a charge sheet approach including variable tunneling capacitance and polysilicon gate depletion effect. ISCAS (4) 2001: 822-825
c1		P. Canet, Rachid Bouchakour, N. Harabech, Ph. Boivin, J. M. Mirabel: EEPROM programming study-time and degradation aspects. ISCAS (4) 2001: 846-849

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