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David Bouchu
2010 – today
- 2010
[c3]Rebha El Farhane, Myriam Assous, Patrick Leduc, Aurélie Thuaire, David Bouchu, Hélène Feldis, Nicolas Sillon: A successful implementation of dual damascene architecture to copper TSV for 3D high density applications. 3DIC 2010: 1-4
2000 – 2009
- 2009
- [c2]Léa Di Cioccio, Pierric Gueguen, Rachid Taibi, Thomas Signamarcheix, Laurent Bally, Laurent Vandroux, Marc Zussy, Sophie Verrun, Jérôme Dechamp, Patrick Leduc, Myriam Assous, David Bouchu, François de Crecy, Laurent-Luc Chapelon, Laurent Clavelier: An innovative die to wafer 3D integration scheme: Die to wafer oxide or copper direct bonding with planarised oxide inter-die filling. 3DIC 2009: 1-4
- [c1]Patrick Leduc, Myriam Assous, Léa Di Cioccio, Marc Zussy, Thomas Signamarcheix, Antonio Roman, Maxime Rousseau, Sophie Verrun, Laurent Bally, David Bouchu, Lionel Cadix, Alexis Farcy, Nicolas Sillon: First integration of Cu TSV using die-to-wafer direct bonding and planarization. 3DIC 2009: 1-5
- 2007
- [j1]O. Cueto, Myriam Assous, François de Crecy, A. Toffoli, David Bouchu, M. Fayolle, Frédéric Boulanger: Development of a permittivity extraction method for ultra low k dielectrics integrated in advanced interconnects. Microelectronics Reliability 47(4-5): 769-772 (2007)
Coauthor Index
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last updated on 2012-12-02 20:37 CET by the dblp team