Giovanni Busatto

G. Busatto, V. De Luca, Francesco Iannuzzo, A. Sanseverino, F. Velardi: Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure. Microelectronics Reliability 52(9-10): 2363-2367 (2012)

Carmine Abbate, G. Busatto, Francesco Iannuzzo: Unclamped repetitive stress on 1200 V normally-off SiC JFETs. Microelectronics Reliability 52(9-10): 2420-2425 (2012)

S. Baccaro, Giovanni Busatto, M. Citterio, Paolo Cova, Nicola Delmonte, Francesco Iannuzzo, A. Lanza, M. Riva, A. Sanseverino, G. Spiazzi: Reliability oriented design of power supplies for high energy physics applications. Microelectronics Reliability 52(9-10): 2465-2470 (2012)

Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo: Operation of SiC normally-off JFET at the edges of its safe operating area. Microelectronics Reliability 51(9-11): 1767-1772 (2011)

Giovanni Busatto, Francesco Iannuzzo: Editorial. Microelectronics Reliability 50(9-11): 1191-1192 (2010)

Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo: IGBT RBSOA non-destructive testing methods: Analysis and discussion. Microelectronics Reliability 50(9-11): 1731-1737 (2010)

G. Busatto, G. Currò, Francesco Iannuzzo, A. Porzio, A. Sanseverino, Francesco Velardi: Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET. Microelectronics Reliability 50(9-11): 1842-1847 (2010)

G. Busatto, G. Currò, Francesco Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi: Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions. Microelectronics Reliability 49(9-11): 1033-1037 (2009)

Giovanni Busatto, Carmine Abbate, Francesco Iannuzzo, P. Cristofaro: Instable mechanisms during unclamped operation of high power IGBT modules. Microelectronics Reliability 49(9-11): 1363-1369 (2009)

G. Busatto, G. Currò, Francesco Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi: Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure. Microelectronics Reliability 48(8-9): 1306-1309 (2008)

G. Busatto, Carmine Abbate, B. Abbate, Francesco Iannuzzo: IGBT modules robustness during turn-off commutation. Microelectronics Reliability 48(8-9): 1435-1439 (2008)

Carmine Abbate, G. Busatto, L. Fratelli, Francesco Iannuzzo, B. Cascone, R. Manzo: The robustness of series-connected high power IGBT modules. Microelectronics Reliability 47(9-11): 1746-1750 (2007)

Francesco Iannuzzo, G. Busatto, Carmine Abbate: Investigation of MOSFET failure in soft-switching conditions. Microelectronics Reliability 46(9-11): 1790-1794 (2006)

Carmine Abbate, G. Busatto, L. Fratelli, Francesco Iannuzzo: The high frequency behaviour of high voltage and current IGBT modules. Microelectronics Reliability 46(9-11): 1848-1853 (2006)

G. Busatto, Francesco Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, G. Currò: Experimental study of power MOSFET's gate damage in radiation environment. Microelectronics Reliability 46(9-11): 1854-1857 (2006)

G. Busatto, A. Porzio, F. Velardi, Francesco Iannuzzo, A. Sanseverino, G. Currò: Experimental and Numerical investigation about SEB/SEGR of Power MOSFET. Microelectronics Reliability 45(9-11): 1711-1716 (2005)

F. Velardi, Francesco Iannuzzo, G. Busatto, J. Wyss, A. Candelori: Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact^, . Microelectronics Reliability 43(4): 549-555 (2003)

Giovanni Busatto, Roberto La Capruccia, Francesco Iannuzzo, Francesco Velardi, Roberto Roncella: MAGFET based current sensing for power integrated circuit. Microelectronics Reliability 43(4): 577-583 (2003)

F. Velardi, Francesco Iannuzzo, G. Busatto, J. Wyss, A. Sanseverino, A. Candelori, G. Currò, A. Cascio, F. Frisina: Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment. Microelectronics Reliability 43(9-11): 1847-1851 (2003)

G. Busatto, Francesco Iannuzzo, F. Velardi, M. Valentino, G. P. Pepe: Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement. Microelectronics Reliability 43(9-11): 1907-1912 (2003)

F. Velardi, Francesco Iannuzzo, G. Busatto, J. Wyss, A. Kaminksy: The Reliability of New Generation Power MOSFETs in Radiation Environment. Microelectronics Reliability 42(9-11): 1629-1634 (2002)

G. Busatto, B. Cascone, L. Fratelli, M. Balsamo, Francesco Iannuzzo, F. Velardi: Non-destructive high temperature characterisation of high-voltage IGBTs. Microelectronics Reliability 42(9-11): 1635-1640 (2002)