Frederick T. Chen

Meng-Fan Chang, Shyh-Shyuan Sheu, Ku-Feng Lin, Che-Wei Wu, Chia-Chen Kuo, Pi-Feng Chiu, Yih-Shan Yang, Yu-Sheng Chen, Heng-Yuan Lee, Chen-Hsin Lien, Frederick T. Chen, Keng-Li Su, Tzu-Kun Ku, Ming-Jer Kao, Ming-Jinn Tsai: A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes. J. Solid-State Circuits 48(3): 878-891 (2013)

H.-S. Philip Wong, Heng-Yuan Lee, Shimeng Yu, Yu-Sheng Chen, Yi Wu, Pang-Shiu Chen, Byoungil Lee, Frederick T. Chen, Ming-Jinn Tsai: Metal-Oxide RRAM. Proceedings of the IEEE 100(6): 1951-1970 (2012)

Frederick T. Chen, Heng-Yuan Lee, Yu-Sheng Chen, Yenya Hsu, Lijie Zhang, Pang-Shiu Chen, Weisu Chen, Peiyi Gu, Wenhsing Liu, Sumin Wang, Chen-Han Tsai, Shyh-Shyuan Sheu, Ming-Jinn Tsai, Ru Huang: Resistance switching for RRAM applications. SCIENCE CHINA Information Sciences 54(5): 1073-1086 (2011)

Shyh-Shyuan Sheu, Kuo-Hsing Cheng, Meng-Fan Chang, Pei-Chia Chiang, Wen-Pin Lin, Heng-Yuan Lee, Pang-Shiu Chen, Yu-Sheng Chen, Frederick T. Chen, Ming-Jinn Tsai: Fast-Write Resistive RAM (RRAM) for Embedded Applications. IEEE Design & Test of Computers 28(1): 64-71 (2011)

Shyh-Shyuan Sheu, Meng-Fan Chang, Ku-Feng Lin, Che-Wei Wu, Yu-Sheng Chen, Pi-Feng Chiu, Chia-Chen Kuo, Yih-Shan Yang, Pei-Chia Chiang, Wen-Pin Lin, Che-He Lin, Heng-Yuan Lee, Peiyi Gu, Sumin Wang, Frederick T. Chen, Keng-Li Su, Chen-Hsin Lien, Kuo-Hsing Cheng, Hsin-Tun Wu, Tzu-Kun Ku, Ming-Jer Kao, Ming-Jinn Tsai: A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability. ISSCC 2011: 200-202