 | 2013 |
| j6 |  | Kyomin Sohn, Taesik Na, Indal Song, Yong Shim, Wonil Bae, Sanghee Kang, Dongsu Lee, Hangyun Jung, Seok-Hun Hyun, Hanki Jeoung, Ki Won Lee, Jun-Seok Park, Jongeun Lee, Byunghyun Lee, Inwoo Jun, Juseop Park, Junghwan Park, Hundai Choi, Sanghee Kim, Haeyoung Chung, Young Choi, Dae-Hee Jung, Byung-Chul Kim, Jung-Hwan Choi, Seong-Jin Jang, Chi-Wook Kim, Jung-Bae Lee, Joo-Sun Choi: A 1.2 V 30 nm 3.2 Gb/s/pin 4 Gb DDR4 SDRAM With Dual-Error Detection and PVT-Tolerant Data-Fetch Scheme. J. Solid-State Circuits 48(1): 168-177 (2013) |
| c10 |  | |
| 2012 |
| j5 |  | Jung-Sik Kim, Chi Sung Oh, Hocheol Lee, Donghyuk Lee, Hyong-Ryol Hwang, Sooman Hwang, Byongwook Na, Joungwook Moon, Jin-Guk Kim, Hanna Park, Jang-Woo Ryu, Kiwon Park, Sang-Kyu Kang, So-Young Kim, Hoyoung Kim, Jong-Min Bang, Hyunyoon Cho, Minsoo Jang, Cheolmin Han, Jung-Bae Lee, Joo-Sun Choi, Young-Hyun Jun: A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 × 128 I/Os Using TSV Based Stacking. J. Solid-State Circuits 47(1): 107-116 (2012) |
| c9 |  | Kyomin Sohn, Taesik Na, Indal Song, Yong Shim, Wonil Bae, Sanghee Kang, Dongsu Lee, Hangyun Jung, Hanki Jeoung, Ki Won Lee, Junsuk Park, Jongeun Lee, Byunghyun Lee, Inwoo Jun, Juseop Park, Junghwan Park, Hundai Choi, Sanghee Kim, Haeyoung Chung, Young Choi, Dae-Hee Jung, Jang Seok Choi, Byung-Sick Moon, Jung-Hwan Choi, Byung-Chul Kim, Seong-Jin Jang, Joo-Sun Choi, Kyungseok Oh: A 1.2V 30nm 3.2Gb/s/pin 4Gb DDR4 SDRAM with dual-error detection and PVT-tolerant data-fetch scheme. ISSCC 2012: 38-40 |
| c8 |  | Yong-Cheol Bae, Joon-Young Park, Sang Jae Rhee, Seung Bum Ko, Yonggwon Jeong, Kwang-Sook Noh, Younghoon Son, Jaeyoun Youn, Yonggyu Chu, Hyunyoon Cho, Mijo Kim, Daesik Yim, Hyo-Chang Kim, Sang-Hoon Jung, Hye-In Choi, Sungmin Yim, Jung-Bae Lee, Joo-Sun Choi, Kyungseok Oh: A 1.2V 30nm 1.6Gb/s/pin 4Gb LPDDR3 SDRAM with input skew calibration and enhanced control scheme. ISSCC 2012: 44-46 |
| c7 |  | |
| 2011 |
| j4 |  | Jong-Pil Son, Jin Ho Kim, Woo Song Ahn, Seung Uk Han, Satoru Yamada, Byung-Sick Moon, Churoo Park, Hong-Sun Hwang, Seong-Jin Jang, Joo-Sun Choi, Young-Hyun Jun, Soo-Won Kim: An Area-Efficient, Low-VDD, Highly Reliable Multi-Cell Antifuse System Fully Operative in DRAMs. IEICE Transactions 94-C(10): 1690-1697 (2011) |
| j3 |  | Tae-Young Oh, Young-Soo Sohn, Seung-Jun Bae, Min-Sang Park, Ji-Hoon Lim, Yong-Ki Cho, Dae-Hyun Kim, Dong-Min Kim, Hye-Ran Kim, Hyun-Joong Kim, Jin-Hyun Kim, Jin-Kook Kim, Young-Sik Kim, Byeong-Cheol Kim, Sang-Hyup Kwak, Jae-Hyung Lee, Jae-Young Lee, Chang-Ho Shin, Yun-Seok Yang, Beom-Sig Cho, Sam-Young Bang, Hyang-Ja Yang, Young-Ryeol Choi, Gil-Shin Moon, Cheol-Goo Park, Seokwon Hwang, Jeong-Don Lim, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun: A 7 Gb/s/pin 1 Gbit GDDR5 SDRAM With 2.5 ns Bank to Bank Active Time and No Bank Group Restriction. J. Solid-State Circuits 46(1): 107-118 (2011) |
| c6 |  | Jung-Sik Kim, Chi Sung Oh, Hocheol Lee, Donghyuk Lee, Hyong-Ryol Hwang, Sooman Hwang, Byongwook Na, Joungwook Moon, Jin-Guk Kim, Hanna Park, Jang-Woo Ryu, Kiwon Park, Sang-Kyu Kang, So-Young Kim, Hoyoung Kim, Jong-Min Bang, Hyunyoon Cho, Minsoo Jang, Cheolmin Han, Jung-Bae Lee, Kyehyun Kyung, Joo-Sun Choi, Young-Hyun Jun: A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using TSV-based stacking. ISSCC 2011: 496-498 |
| c5 |  | Seung-Jun Bae, Young-Soo Sohn, Tae-Young Oh, Si-Hong Kim, Yun-Seok Yang, Dae-Hyun Kim, Sang-Hyup Kwak, Ho-Seok Seol, Chang-Ho Shin, Min-Sang Park, Gong-Heom Han, Byeong-Cheol Kim, Yong-Ki Cho, Hye-Ran Kim, Su-Yeon Doo, Young-Sik Kim, Dong-Seok Kang, Young-Ryeol Choi, Sam-Young Bang, Sun-Young Park, Yong-Jae Shin, Gil-Shin Moon, Cheol-Goo Park, Woo-Seop Kim, Hyang-Ja Yang, Jeong-Don Lim, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun: A 40nm 2Gb 7Gb/s/pin GDDR5 SDRAM with a programmable DQ ordering crosstalk equalizer and adjustable clock-tracking BW. ISSCC 2011: 498-500 |
| 2010 |
| j2 |  | Uksong Kang, Hoeju Chung, Seongmoo Heo, Dukha Park, Hoon Lee, Jin Ho Kim, Soon-Hong Ahn, Sooho Cha, Jaesung Ahn, Dukmin Kwon, Jaewook Lee, Han-Sung Joo, Woo-Seop Kim, Dong Hyeon Jang, Nam-Seog Kim, Jung-Hwan Choi, Tae-Gyeong Chung, Jei-Hwan Yoo, Joo-Sun Choi, Changhyun Kim, Young-Hyun Jun: 8 Gb 3-D DDR3 DRAM Using Through-Silicon-Via Technology. J. Solid-State Circuits 45(1): 111-119 (2010) |
| j1 |  | |
| c4 |  | |
| c3 |  | Tae-Young Oh, Young-Soo Sohn, Seung-Jun Bae, Min-Sang Park, Ji-Hoon Lim, Yong-Ki Cho, Dae-Hyun Kim, Dong-Min Kim, Hye-Ran Kim, Hyun-Joong Kim, Jin-Hyun Kim, Jin-Kook Kim, Young-Sik Kim, Byeong-Cheol Kim, Sang-Hyup Kwak, Jae-Hyung Lee, Jae-Young Lee, Chang-Ho Shin, Yun-Seok Yang, Beom-Sig Cho, Sam-Young Bang, Hyang-Ja Yang, Young-Ryeol Choi, Gil-Shin Moon, Cheol-Goo Park, Seokwon Hwang, Jeong-Don Lim, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun: A 7Gb/s/pin GDDR5 SDRAM with 2.5ns bank-to-bank active time and no bank-group restriction. ISSCC 2010: 434-435 |
| 2009 |
| c2 |  | |
| 2008 |
| c1 |  | |