Léa Di Cioccio

H. Moriceau, F. Rieutord, F. Fournel, Léa Di Cioccio, C. Moulet, L. Libralesso, Pierric Gueguen, Rachid Taibi, C. Deguet: Low temperature direct bonding: An attractive technique for heterostructures build-up. Microelectronics Reliability 52(2): 331-341 (2012)

Léa Di Cioccio, Rachid Taibi, C. Chappaz, S. Moreau, Laurent-Luc Chapelon, Thomas Signamarcheix: 200°C direct bonding copper interconnects : Electrical results and reliability. 3DIC 2011: 1-4

S. Mermoz, L. Sanchez, Léa Di Cioccio, J. Berthier, E. Deloffre, C. Fretigny: Impact of containment and deposition method on sub-micron chip-to-wafer self-assembly yield. 3DIC 2011: 1-5

Ionut Radu, Didier Landru, Gweltaz Gaudin, Gregory Riou, Catherine Tempesta, F. Letertre, Léa Di Cioccio, Pierric Gueguen, Thomas Signamarcheix, C. Euvrard, Jérôme Dechamp, Laurent Clavelier, Mariam Sadaka: Recent Developments of Cu-Cu non-thermo compression bonding for wafer-to-wafer 3D stacking. 3DIC 2010: 1-6

Léa Di Cioccio, Pierric Gueguen, Rachid Taibi, Thomas Signamarcheix, Laurent Bally, Laurent Vandroux, Marc Zussy, Sophie Verrun, Jérôme Dechamp, Patrick Leduc, Myriam Assous, David Bouchu, François de Crecy, Laurent-Luc Chapelon, Laurent Clavelier: An innovative die to wafer 3D integration scheme: Die to wafer oxide or copper direct bonding with planarised oxide inter-die filling. 3DIC 2009: 1-4

Patrick Leduc, Myriam Assous, Léa Di Cioccio, Marc Zussy, Thomas Signamarcheix, Antonio Roman, Maxime Rousseau, Sophie Verrun, Laurent Bally, David Bouchu, Lionel Cadix, Alexis Farcy, Nicolas Sillon: First integration of Cu TSV using die-to-wafer direct bonding and planarization. 3DIC 2009: 1-5