Cor Claeys

N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, Eddy Simoen, Cor Claeys: Drain currents and their excess noise in triple gate bulk p-channel FinFETs of different geometry. Microelectronics Reliability 53(3): 394-399 (2013)

Valeria Kilchytska, Joaquín Alvarado, S. Put, Nadine Collaert, Eddy Simoen, Cor Claeys, O. Militaru, G. Berger, Denis Flandre: High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs. Microelectronics Reliability 52(1): 118-123 (2012)

Renan Trevisoli Doria, João Antonio Martino, Eddy Simoen, Cor Claeys, Marcelo Antonio Pavanello: An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices. Microelectronics Reliability 52(3): 519-524 (2012)

Tommaso Romeo, Luigi Pantisano, Eddy Simoen, Raymond Krom, M. Togo, N. Horiguchi, Jérôme Mitard, A. Thean, Guido Groeseneken, Cor Claeys, Felice Crupi: Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs. ESSDERC 2012: 330-333

Eddy Simoen, Marc Aoulaiche, Anabela Veloso, M. Jurczak, Cor Claeys, L. Mendes Almeida, M. G. C. Andrade, A. Luque Rodriguez, J. A. Jimenez Tejada, C. Caillat, P. Fazan: On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs. ESSDERC 2012: 338-341

Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen, Cor Claeys: Study of the linear kink effect in PD SOI nMOSFETs. Microelectronics Journal 38(1): 114-119 (2007)

Paolo Srinivasan, Felice Crupi, Eddy Simoen, Paolo Magnone, Calogero Pace, D. Misra, Cor Claeys: Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks. Microelectronics Reliability 47(4-5): 501-504 (2007)

Kerem Akarvardar, Abdelkarim Mercha, Eddy Simoen, Vaidyanathan Subramanian, Cor Claeys, Pierre Gentil, Sorin Cristoloveanu: High-temperature performance of state-of-the-art triple-gate transistors. Microelectronics Reliability 47(12): 2065-2069 (2007)

Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen, Cor Claeys: Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS. Microelectronics Journal 37(8): 681-685 (2006)

L. M. Camillo, João Antonio Martino, Eddy Simoen, Cor Claeys: The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETs. Microelectronics Journal 37(9): 952-957 (2006)

J. M. Rafí, Eddy Simoen, K. Hayama, Abdelkarim Mercha, F. Campabadal, H. Ohyama, Cor Claeys: Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs. Microelectronics Reliability 46(9-11): 1657-1663 (2006)

K. Hayama, K. Takakura, K. Shigaki, H. Ohyama, J. M. Rafí, Abdelkarim Mercha, Eddy Simoen, Cor Claeys: Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation. Microelectronics Reliability 46(9-11): 1731-1735 (2006)

K. Hayama, K. Takakura, H. Ohyama, S. Kuboyama, S. Matsuda, J. M. Rafí, Abdelkarim Mercha, Eddy Simoen, Cor Claeys: Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs. Microelectronics Reliability 45(9-11): 1376-1381 (2005)

Cor Claeys: Technological Challenges of Advanced CMOS Processing and Their Impact on Design Aspects. VLSI Design 2004: 275-

H. Ohyama, Eddy Simoen, S. Kuroda, Cor Claeys, Y. Takami, T. Hakata, K. Kobayashi, M. Nakabayashi, H. Sunaga: Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle. Microelectronics Reliability 41(1): 79-85 (2001)

M. Nakabayashi, H. Ohyama, Eddy Simoen, M. Ikegami, Cor Claeys, K. Kobayashi, M. Yoneoka, K. Miyahara: Reliability of polycrystalline silicon thin film resistors. Microelectronics Reliability 41(9-10): 1341-1346 (2001)

H. Ohyama, M. Nakabayashi, Eddy Simoen, Cor Claeys, T. Tanaka, T. Hirao, S. Onada, K. Kobayashi: Radiation damages of polycrystalline silicon films and npn Si transistors by high-energy particle irradiation. Microelectronics Reliability 41(9-10): 1443-1448 (2001)