| 2012 | ||
|---|---|---|
| j3 | Hossein Aghababa, Alireza Khosropour, Ali Afzali-Kusha, Behjat Forouzandeh, Massoud Pedram: Statistical estimation of leakage power dissipation in nano-scale complementary metal oxide semiconductor digital circuits using generalised extreme value distribution. IET Circuits, Devices & Systems 6(5): 273-278 (2012) | |
| j2 | Hossein Aghababa, Behjat Forouzandeh, Ali Afzali-Kusha: High-performance low-leakage regions of nano-scaled CMOS digital gates under variations of threshold voltage and mobility. Journal of Zhejiang University - Science C 13(6): 460-471 (2012) | |
| j1 | Pedram Payandehnia, Samad Sheikhaei, Aliazam Abbasfar, Behjat Forouzandeh: A 12.5 Gb/s 6.6 mW receiver with analog equalizer and 1-tap DFE. Microelectronics Journal 43(12): 1029-1037 (2012) | |
| 2011 | ||
| c5 | Pedram Payandehnia, Behjat Forouzandeh, Aliazam Abbasfar, Samad Sheikhaei, Kambiz Nanbakhsh: A 12.5Gb/s active-inductor based transmitter for I/O applications. ECCTD 2011: 186-189 | |
| c4 | Alireza Khosropour, Hossein Aghababa, Behjat Forouzandeh: Quantum Division Circuit Based on Restoring Division Algorithm. ITNG 2011: 1037-1040 | |
| c3 | Alireza Khosropour, Hossein Aghababa, Ali Afzali-Kusha, Behjat Forouzandeh: Chip Level Statistical Leakage Power Estimation Using Generalized Extreme Value Distribution. PATMOS 2011: 173-179 | |
| 2010 | ||
| c2 | Hossein Aghababa, Mahmoud Zangeneh, Ali Afzali-Kusha, Behjat Forouzandeh: Statistical delay modeling of read operation of SRAMs due to channel length variation. ISCAS 2010: 2502-2505 | |
| 2006 | ||
| c1 | Fatemeh Aezinia, Behjat Forouzandeh: A Novel Low Power NOR gate in SOI CMOS Technology. APCCAS 2006: 1403-1405 | |
| 1 | Aliazam Abbasfar | |
| 2 | Fatemeh Aezinia | |
| 3 | Ali Afzali-Kusha | |
| 4 | Hossein Aghababa | |
| 5 | Alireza Khosropour | |
| 6 | Kambiz Nanbakhsh | |
| 7 | Pedram Payandehnia | |
| 8 | Massoud Pedram | |
| 9 | Samad Sheikhaei | |
| 10 | Mahmoud Zangeneh |
Colors in the list of coauthors
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