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V. N. Freire
2000 – 2009
- 2005
[j5]M. G. Bezerra, J. A. K. Freire, V. N. Freire, G. A. Farias, F. M. S. Lima, A. L. A. Fonseca, O. A. C. Nunes Jr.: Interface effects in modulation-doped GaAs/AlGaAs single quantum wells and superlattices. Microelectronics Journal 36(3-6): 359-361 (2005)- [j4]J. B. da Silva Jr., Elder A. de Vasconcelos, B. E. C. A. dos Santos, J. A. K. Freire, V. N. Freire, G. A. Farias, E. F. da Silva Jr.: Statistical analysis of topographic images of nanoporous silicon and model surfaces. Microelectronics Journal 36(11): 1011-1015 (2005)
- [j3]S. K. Medeiros, E. L. Albuquerque, F. F. Maia, E. W. S. Caetano, G. A. Farias, V. N. Freire, B. S. Cavada, M. L. Pessati, T. L. P. Pessati: Structural and optical properties of CaO. Microelectronics Journal 36(11): 1058-1061 (2005)
- 2003
- [j2]T. A. S. Pereira, J. A. K. Freire, V. N. Freire, G. A. Farias, L. M. R. Scolfaro, J. R. Leite, E. F. da Silva Jr.: Confined excitons in Si/SrTiO3 quantum wells. Microelectronics Journal 34(5-8): 507-509 (2003)
- [j1]M. Z. S. Flores, F. F. Maia, V. N. Freire, J. A. P. da Costa, E. F. da Silva: Band structure anisotropy effects on the hole transport transient in 4H-SiC. Microelectronics Journal 34(5-8): 717-719 (2003)
Coauthor Index
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last updated on 2012-12-02 20:42 CET by the dblp team