Francisco J. García-Sánchez

Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juan Muci, Alberto Terán Barrios, Juin J. Liou, Ching-Sung Ho: Revisiting MOSFET threshold voltage extraction methods. Microelectronics Reliability 53(1): 90-104 (2013)

Denise C. Lugo Muñoz, Juan Muci, Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Michelly de Souza, Marcelo A. Pavanello: An explicit multi-exponential model for semiconductor junctions with series and shunt resistances. Microelectronics Reliability 51(12): 2044-2048 (2011)

Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juin J. Liou, Ching-Sung Ho: Integration-based approach to evaluate the sub-threshold slope of MOSFETs. Microelectronics Reliability 50(2): 312-315 (2010)

Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juan Muci, Denise C. Lugo Muñoz, Álvaro D. Latorre Rey, Ching-Sung Ho, Juin J. Liou: Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction. Microelectronics Reliability 49(7): 689-692 (2009)

Francisco J. García-Sánchez, Adelmo Ortiz-Conde, Juan Muci: Understanding threshold voltage in undoped-body MOSFETs: An appraisal of various criteria. Microelectronics Reliability 46(5-6): 731-742 (2006)

Juin J. Liou, R. Shireen, Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Antonio Cerdeira, Xiaofang Gao, Xuecheng Zou, Ching-Sung Ho: Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs. Microelectronics Reliability 42(3): 343-347 (2002)

Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juin J. Liou, Antonio Cerdeira, Magali Estrada, Y. Yue: A review of recent MOSFET threshold voltage extraction methods. Microelectronics Reliability 42(4-5): 583-596 (2002)

Magali Estrada, Antonio Cerdeira, Adelmo Ortiz-Conde, Francisco J. García-Sánchez: Determination of trap cross-section in a-Si: H p-i-n diodes parameters using simulation and parameter extraction. Microelectronics Reliability 41(4): 605-610 (2001)