Antonio Gnudi

Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani: Deterministic solution of the 1D Boltzmann transport equation: Application to the study of current transport in nanowire FETs. Microelectronics Journal 44(1): 20-25 (2013)

Elena Gnani, Susanna Reggiani, Antonio Gnudi, Giorgio Baccarani: Drain-conductance optimization in nanowire TFETs. ESSDERC 2012: 105-108

Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, S. Poli, M.-Y. Chuang, W. Tian, R. Wise: TCAD degradation modeling for LDMOS transistors. ESSDERC 2012: 185-188

Eleonora Franchi Scarselli, Antonio Gnudi, Federico Natali, Mauro Scandiuzzo, Roberto Canegallo, Roberto Guerrieri: Automatic Compensation of the Voltage Attenuation in 3-D Interconnection Based on Capacitive Coupling. J. Solid-State Circuits 46(2): 498-506 (2011)

Luca Larcher, Riccardo Brama, Marcello Ganzerli, Jacopo Iannacci, Marco Bedani, Antonio Gnudi: A MEMS reconfigurable quad-band Class-E Power Amplifier for GSM standard. DATE 2009: 364-368

Jacopo Iannacci, Jason Tian, Roberto Gaddi, Antonio Gnudi, Marian Bartek: A Fully Parameterized Fem Model for Electromagnetic Optimization of an RF Mems Wafer Level Package. CoRR abs/0802.3057 (2008)

Marco Bedani, F. Carozza, Roberto Gaddi, Antonio Gnudi, Benno Margesin, Flavio Giacomozzi: A Reconfigurable Impedance Matching Network Employing RF-MEMS Switches. CoRR abs/0802.3088 (2008)

Jacopo Iannacci, Jason Tian, Saoer Sinaga, Roberto Gaddi, Antonio Gnudi, Marian Bartek: Parasitic Effects Reduction for Wafer-Level Packaging of RF-Mems. CoRR abs/0711.3275 (2007)

Stefano Vitali, Eleonora Franchi, Antonio Gnudi: A gain/phase mismatch calibration procedure for RF I/Q downconverters. ISCAS (3) 2005: 2108-2111

Paola Tortori, Davide Guermandi, Eleonora Franchi, Antonio Gnudi: Quadrature VCO based on direct second harmonic locking. ISCAS (1) 2004: 169-172

Alberto Leone, Antonio Gnudi, Giorgio Baccarani: Hydrodynamic simulation of semiconductor devices operating at low temperature. IEEE Trans. on CAD of Integrated Circuits and Systems 13(11): 1400-1408 (1994)

Antonio Gnudi, Davide Ventura, Giorgio Baccarani: Modeling impact ionization in a BJT by means of spherical harmonics expansion of the Boltzmann transport equation. IEEE Trans. on CAD of Integrated Circuits and Systems 12(11): 1706-1713 (1993)

Wai Lee, Steven E. Laux, Massimo V. Fischetti, Giorgio Baccarani, Antonio Gnudi, Johannes M. C. (Hans) Stork, Jack A. Mandelman, Emmanuel F. Crabbé, Matthew R. Wordeman, Farouk Odeh: Numerical modeling of advanced semiconductor devices. IBM Journal of Research and Development 36(2): 208-232 (1992)

Antonio Gnudi, Farouk Odeh, Massimo Rudan: Investigation of non-local transport phenomena in small semiconductor devices. European Transactions on Telecommunications 1(3): 307-312 (1990)

Paolo Ciampolini, Alessandro Forghieri, Anna Pierantoni, Antonio Gnudi, Massimo Rudan, Giorgio Baccarani: Adaptive mesh generation preserving the quality of the initial grid. IEEE Trans. on CAD of Integrated Circuits and Systems 8(5): 490-500 (1989)

Alessandro Forghieri, Roberto Guerrieri, Paolo Ciampolini, Antonio Gnudi, Massimo Rudan, Giorgio Baccarani: A new discretization strategy of the semiconductor equations comprising momentum and energy balance. IEEE Trans. on CAD of Integrated Circuits and Systems 7(2): 231-242 (1988)

Antonio Gnudi, Paolo Ciampolini, Roberto Guerrieri, Massimo Rudan, Giorgio Baccarani: Sensitivity Analysis for Device Design. IEEE Trans. on CAD of Integrated Circuits and Systems 6(5): 879-885 (1987)