Matt Goldman

G. G. Marotta, A. Macerola, A. D'Alessandro, A. Torsi, C. Cerafogli, C. Lattaro, C. Musilli, D. Rivers, E. Sirizotti, F. Paolini, G. Imondi, G. Naso, G. Santin, L. Botticchio, L. De Santis, L. Pilolli, M. L. Gallese, M. Incarnati, M. Tiburzi, P. Conenna, S. Perugini, V. Moschiano, W. Di Francesco, Matt Goldman, Chris Haid, D. Di Cicco, D. Orlandi, F. Rori, Massimo Rossini, Tommaso Vali, R. Ghodsi, F. Roohparvar: A 3bit/cell 32Gb NAND flash memory at 34nm with 6MB/s program throughput and with dynamic 2b/cell blocks configuration mode for a program throughput increase up to 13MB/s. ISSCC 2010: 444-445

Raymond Zeng, Navneet Chalagalla, Dan Chu, Daniel Elmhurst, Matt Goldman, Chris Haid, Atif Huq, Takaaki Ichikawa, Joel Jorgensen, Owen Jungroth, Nishnat Kajla, Ravinder Kajley, Koichi Kawai, Jiro Kishimoto, Ali Madraswala, Tetsuji Manabe, Vikram Mehta, Midori Morooka, Katie Nguyen, Yoko Oikawa, Bharat Pathak, Rod Rozman, Tom Ryan, Andy Sendrowski, William Sheung, Martin Szwarc, Yasuhiro Takashima, Satoru Tamada, Toru Tanzawa, Tomoharu Tanaka, Mase Taub, Darshak Udeshi, Sjigekazu Yamada, Hiroyuki Yokoyama: A 172mm² 32Gb MLC NAND flash memory in 34nm CMOS. ISSCC 2009: 236-237