| 2003 | ||
|---|---|---|
| j11 | Ali Keshavarzi, Kaushik Roy, Charles F. Hawkins, Vivek De: Multiple-parameter CMOS IC testing with increased sensitivity for IDDQ. IEEE Trans. VLSI Syst. 11(5): 863-870 (2003) | |
| c26 | Charles F. Hawkins, Ali Keshavarzi, Jaume Segura: A View from the Bottom: Nanometer Technology AC Parametric Failures -- Why, Where, and How to Detect. DFT 2003: 267- | |
| c25 | Oleg Semenov, Arman Vassighi, Manoj Sachdev, Ali Keshavarzi, Charles F. Hawkins: Burn-in Temperature Projections for Deep Sub-micron Technologies. ITC 2003: 95-104 | |
| 2002 | ||
| j10 | Ali Keshavarzi, James Tschanz, Siva Narendra, Vivek De, W. Robert Daasch, Kaushik Roy, Manoj Sachdev, Charles F. Hawkins: Leakage and Process Variation Effects in Current Testing on Future CMOS Circuits. IEEE Design & Test of Computers 19(5): 36-43 (2002) | |
| c24 | Jaume Segura, Ali Keshavarzi, Jerry M. Soden, Charles F. Hawkins: Parametric Failures in CMOS ICs - A Defect-Based Analysis. ITC 2002: 90-99 | |
| c23 | Bartomeu Alorda, M. Rosales, Jerry M. Soden, Charles F. Hawkins, Jaume Segura: Charge Based Transient Current Testing (CBT) for Submicron CMOS SRAMs. ITC 2002: 947-953 | |
| 2001 | ||
| c22 | Ivan de Paúl, M. Rosales, Bartomeu Alorda, Jaume Segura, Charles F. Hawkins, Jerry M. Soden: Defect Oriented Fault Diagnosis for Semiconductor Memories using Charge Analysis: Theory and Experiments. VTS 2001: 286-291 | |
| 2000 | ||
| j9 | Ali Keshavarzi, Kaushik Roy, Charles F. Hawkins: Intrinsic leakage in deep submicron CMOS ICs-measurement-based test solutions. IEEE Trans. VLSI Syst. 8(6): 717-723 (2000) | |
| c21 | Ali Keshavarzi, Kaushik Roy, Charles F. Hawkins, Manoj Sachdev, K. Soumyanath, Vivek De: Multiple-parameter CMOS IC testing with increased sensitivity for I_DDQ. ITC 2000: 1051-1059 | |
| 1999 | ||
| j8 | Charles F. Hawkins, Jaume Segura: Test and Reliability: Partners in IC Manufacturing, Part 1. IEEE Design & Test of Computers 16(3): 64-71 (1999) | |
| j7 | Charles F. Hawkins, Jerry M. Soden: Deep Submicron CMOS Current IC Testing: Is There a Future? IEEE Design & Test of Computers 16(4): 14-15 (1999) | |
| j6 | Charles F. Hawkins, Jaume Segura, Jerry M. Soden, Ted Dellin: Test and Reliability: Partners in IC Manufacturing, Part 2. IEEE Design & Test of Computers 16(4): 66-73 (1999) | |
| c20 | Ali Keshavarzi, Siva Narendra, Shekhar Borkar, Charles F. Hawkins, Kaushik Roy, Vivek De: Technology scaling behavior of optimum reverse body bias for standby leakage power reduction in CMOS IC's. ISLPED 1999: 252-254 | |
| 1998 | ||
| c19 | Alan W. Righter, Charles F. Hawkins, Jerry M. Soden, Peter C. Maxwell: CMOS IC reliability indicators and burn-in economics. ITC 1998: 194-203 | |
| 1997 | ||
| c18 | Edward I. Cole Jr., Jerry M. Soden, Paiboon Tangyunyong, Patrick L. Candelaria, Richard W. Beegle, Daniel L. Barton, Christopher L. Henderson, Charles F. Hawkins: Transient Power Supply Voltage (VDDT) Analysis for Detecting IC Defects. ITC 1997: 23-31 | |
| c17 | Ali Keshavarzi, Kaushik Roy, Charles F. Hawkins: Intrinsic Leakage in Low-Power Deep Submicron CMOS ICs. ITC 1997: 146-155 | |
| 1996 | ||
| j5 | Jerry M. Soden, Charles F. Hawkins: IDDQ Testing: Issues Present and Future. IEEE Design & Test of Computers 13(4): 61-65 (1996) | |
| j4 | Jaume Segura, Carol de Benito, A. Rubio, Charles F. Hawkins: A detailed analysis and electrical modeling of gate oxide shorts in MOS transistors. J. Electronic Testing 8(3): 229-239 (1996) | |
| 1995 | ||
| j3 | Charles F. Hawkins, Jerry M. Soden: IDDQ Design and Test Advantages Propel Industry. IEEE Design & Test of Computers 12(2): 40-41 (1995) | |
| c16 | Jaume Segura, Carol de Benito, A. Rubio, Charles F. Hawkins: A Detailed Analysis of GOS Defects in MOS Transistors: Testing Implications at Circuit Level. ITC 1995: 544-551 | |
| 1994 | ||
| c15 | Charles F. Hawkins, Jerry M. Soden, Alan W. Righter, F. Joel Ferguson: Defect Classes - An Overdue Paradigm for CMOS IC. ITC 1994: 413-425 | |
| 1993 | ||
| c14 | ||
| c13 | ||
| c12 | Kenneth M. Wallquist, Alan W. Righter, Charles F. Hawkins: A General Purpose IDDQ Measurement Circuit. ITC 1993: 642-651 | |
| 1992 | ||
| j2 | ||
| j1 | Jerry M. Soden, Charles F. Hawkins, Ravi K. Gulati, Weiwei Mao: IDDQ testing: A review. J. Electronic Testing 3(4): 291-303 (1992) | |
| c11 | Richard H. Williams, R. Glenn Wagner, Charles F. Hawkins: Testing Errors: Data and Calculations in an IC Manufacturing Process. ITC 1992: 352-361 | |
| c10 | Christopher L. Henderson, Richard H. Williams, Charles F. Hawkins: Economic Impact of Type I Test Errors at System and Board Levels. ITC 1992: 444-452 | |
| c9 | ||
| 1991 | ||
| c8 | Christopher L. Henderson, Jerry M. Soden, Charles F. Hawkins: The Behavior and Testing Implications of CMOS IC Logic Gate Open Circuits. ITC 1991: 302-310 | |
| c7 | Charles F. Hawkins, Richard H. Williams: EE Curriculum - Continuous Process Improvement? ITC 1991: 1118 | |
| 1990 | ||
| c6 | Jerry M. Soden, Ronald R. Fritzemeier, Charles F. Hawkins: Zero defects or zero stuck-at faults-CMOS IC process improvement with IDDQ. ITC 1990: 255-256 | |
| c5 | Ronald R. Fritzemeier, Jerry M. Soden, R. Keith Treece, Charles F. Hawkins: Increased CMOS IC stuck-at fault coverage with reduced I DDQ test sets. ITC 1990: 427-435 | |
| c4 | ||
| 1989 | ||
| c3 | Jerry M. Soden, R. Keith Treece, Michael R. Taylor, Charles F. Hawkins: CMOS IC Stuck-Open Fault Electrical Effects and Design Considerations. ITC 1989: 423-430 | |
| 1986 | ||
| c2 | Jerry M. Soden, Charles F. Hawkins: Reliability and Electrical Properties of Gate Oxide Shorts in CMOS ICs. ITC 1986: 443-451 | |
| 1985 | ||
| c1 | Jerry M. Soden, Charles F. Hawkins: Electrical Characteristics and Testing Considerations for Gate Oxide Shorts in CMOS ICs. ITC 1985: 544-557 | |
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