E. F. da Silva, E. F. da Silva Jr.
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 | 2005 | |
|---|---|---|
| j12 |      | S. C. P. Rodrigues Jr., G. M. Sipahi Jr., E. F. da Silva: Optical and electronic properties of AlInGaN/InGaN superlattices. Microelectronics Journal 36(3-6): 434-437 (2005) |
| j11 | | V. Anjos, M. J. V. Bell, Elder A. de Vasconcelos, E. F. da Silva, A. A. Andrade, R. W. A. Franco, M. P. P. Castro, I. A. Esquef, R. T. Faria: Thermal-lens and photo-acoustic methods for the determination of SiC thermal properties. Microelectronics Journal 36(11): 977-980 (2005) |
| j10 | | Walter M. de Azevedo, E. F. da Silva, Elder A. de Vasconcelos, Henri Boudinov: Visible photoluminescence from Ge nanoclusters implanted in nanoporous aluminum oxide films. Microelectronics Journal 36(11): 992-994 (2005) |
| j9 | | S. C. P. Rodrigues Jr., M. N. d'Eurydice, G. M. Sipahi Jr., E. F. da Silva: Design of InGaN/AlInGaN superlattices for white-light device applications. Microelectronics Journal 36(11): 1002-1005 (2005) |
| j8 | | J. B. da Silva Jr., Elder A. de Vasconcelos, B. E. C. A. dos Santos, J. A. K. Freire, V. N. Freire, G. A. Farias, E. F. da Silva Jr.: Statistical analysis of topographic images of nanoporous silicon and model surfaces. Microelectronics Journal 36(11): 1011-1015 (2005) |
| j7 | | F. M. S. Lima, A. B. Veloso, A. L. A. Fonseca, O. A. C. Nunes Jr., E. F. da Silva: Variational results for electron mobility in modulation-doped In0.53Ga0.47As/InP single symmetric quantum wells. Microelectronics Journal 36(11): 1016-1019 (2005) |
| j6 | | M. N. d'Eurydice, G. M. Sipahi Jr., S. C. P. Rodrigues Jr., E. F. da Silva: Optical properties in p-type doping of nitrides quaternary alloys multiple quantum wells. Microelectronics Journal 36(11): 1029-1033 (2005) |
| j5 | | E. Souto, O. A. C. Nunes Jr., D. A. Agrello, A. L. A. Fonseca, E. F. da Silva: Magneto-quantum oscillations of the Korringa relaxation rate of manganese ion near a two-dimensional electron gas. Microelectronics Journal 36(11): 1041-1044 (2005) |
| 2003 | ||
| j4 | | T. A. S. Pereira, J. A. K. Freire, V. N. Freire, G. A. Farias, L. M. R. Scolfaro, J. R. Leite, E. F. da Silva Jr.: Confined excitons in Si/SrTiO3 quantum wells. Microelectronics Journal 34(5-8): 507-509 (2003) |
| j3 | | Jane M. G. Laranjeira, E. F. da Silva Jr., Walter M. de Azevedo, Elder A. de Vasconcelos, Helen J. Khoury, R. A. Simão, C. A. Achete: AFM studies of polyaniline nanofilms irradiated with gamma rays. Microelectronics Journal 34(5-8): 511-513 (2003) |
| j2 | | Dyanna G. D. Teixeira, Jane M. G. Laranjeira, Elder A. de Vasconcelos, E. F. da Silva, Walter M. de Azevedo, Helen J. Khoury: Reliability physics study for semiconductor-polymer device development. Microelectronics Journal 34(5-8): 713-715 (2003) |
| j1 | | M. Z. S. Flores, F. F. Maia, V. N. Freire, J. A. P. da Costa, E. F. da Silva: Band structure anisotropy effects on the hole transport transient in 4H-SiC. Microelectronics Journal 34(5-8): 717-719 (2003) |
Colors in the list of coauthors
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