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Nathalie Labat
2010 – today
- 2012
[j22]B. Lambert, Nathalie Labat, D. Carisetti, S. Karboyan, Jean-Guy Tartarin, J. Thorpe, Laurent Brunel, A. Curutchet, N. Malbert, E. Latu-Romain, M. Mermoux: Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test. Microelectronics Reliability 52(9-10): 2184-2187 (2012)- [c1]Laurent Brunel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat, B. Lambert: Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements. ESSDERC 2012: 270-273
- 2011
- [j21]
- [j20]G. A. Koné, Brice Grandchamp, C. Hainaut, François Marc, C. Maneux, Nathalie Labat, Thomas Zimmer, Virginie Nodjiadjim, Muriel Riet, Jean Godin: Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses. Microelectronics Reliability 51(9-11): 1730-1735 (2011)
- [j19]A. Aubert, S. Jacques, S. Pétremont, Nathalie Labat, Hélène Frémont: Experimental power cycling on insulated TRIAC package: Reliability interpretation thanks to an innovative failure analysis flow. Microelectronics Reliability 51(9-11): 1845-1849 (2011)
- 2010
- [j18]M. Faqir, M. Bouya, N. Malbert, Nathalie Labat, D. Carisetti, B. Lambert, G. Verzellesi, Fausto Fantini: Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations. Microelectronics Reliability 50(9-11): 1520-1522 (2010)
- [j17]G. A. Koné, Brice Grandchamp, C. Hainaut, François Marc, C. Maneux, Nathalie Labat, Thomas Zimmer, Virginie Nodjiadjim, Jean Godin: Preliminary results of storage accelerated aging test on InP/InGaAs DHBT. Microelectronics Reliability 50(9-11): 1548-1553 (2010)
- [j16]A. Aubert, J. P. Rebrasse, L. Dantas de Morais, Nathalie Labat, Hélène Frémont: Failure analysis case study on a Cu/low-k technology in package: New front-side approach using laser and plasma de-processing. Microelectronics Reliability 50(9-11): 1688-1691 (2010)
2000 – 2009
- 2009
- [j15]
- [j14]N. Malbert, Nathalie Labat, A. Curutchet, C. Sury, V. Hoel, J.-C. de Jaeger, N. Defrance, Y. Douvry, Christian Dua, Mourad Oualli, C. Bru-Chevallier, J.-M. Bluet, W. Chikhaoui: Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs. Microelectronics Reliability 49(9-11): 1216-1221 (2009)
- 2008
- [j13]M. Bouya, N. Malbert, Nathalie Labat, D. Carisetti, Philippe Perdu, J. C. Clement, B. Lambert, M. Bonnet: Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques. Microelectronics Reliability 48(8-9): 1366-1369 (2008)
- 2007
- [j12]
- [j11]M. Bouya, D. Carisetti, N. Malbert, Nathalie Labat, Philippe Perdu, J. C. Clement, M. Bonnet, G. Pataut: Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC. Microelectronics Reliability 47(9-11): 1630-1633 (2007)
- [j10]M. Faqir, G. Verzellesi, Fausto Fantini, Francesca Danesin, F. Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Anna Cavallini, Antonio Castaldini, Nathalie Labat, André Touboul, Christian Dua: Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs. Microelectronics Reliability 47(9-11): 1639-1642 (2007)
- 2006
- [j9]A. Sozza, A. Curutchet, Christian Dua, N. Malbert, Nathalie Labat, André Touboul: AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements. Microelectronics Reliability 46(9-11): 1725-1730 (2006)
- 2005
- [j8]
- [j7]N. Ismail, N. Malbert, Nathalie Labat, André Touboul, J. L. Muraro, F. Brasseau, D. Langrez: Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions. Microelectronics Reliability 45(9-11): 1611-1616 (2005)
- 2003
- [j6]
- [j5]A. Curutchet, N. Malbert, Nathalie Labat, André Touboul, C. Gaquière, A. Minko, M. Uren: Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. Microelectronics Reliability 43(9-11): 1713-1718 (2003)
- [j4]J. C. Martin, C. Maneux, Nathalie Labat, André Touboul, Muriel Riet, S. Blayac, M. Kahn, Jean Godin: 1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal stresses. Microelectronics Reliability 43(9-11): 1725-1730 (2003)
- [j3]M. Belhaj, C. Maneux, Nathalie Labat, André Touboul, P. Bove: High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects. Microelectronics Reliability 43(9-11): 1731-1736 (2003)
- 2002
- [j2]Nathalie Labat, N. Malbert, B. Lambert, André Touboul, F. Garat, B. Proust: Degradation mechanisms induced by thermal and bias stresses in InP HEMTs. Microelectronics Reliability 42(9-11): 1575-1580 (2002)
- 2001
- [j1]B. Lambert, N. Malbert, Nathalie Labat, F. Verdier, André Touboul, P. Huguet, R. Bonnet, G. Pataut: Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses. Microelectronics Reliability 41(9-10): 1573-1578 (2001)
Coauthor Index
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last updated on 2012-12-02 21:06 CET by the dblp team