Salvatore Lombardo

S. Libertino, D. Corso, G. Murè, A. Marino, F. Palumbo, F. Principato, G. Cannella, T. Schillaci, S. Giarusso, F. Celi, M. Lisiansky, Y. Roizin, Salvatore Lombardo: Radiation effects in nitride read-only memories. Microelectronics Reliability 50(9-11): 1857-1860 (2010)

R. Pagano, Salvatore Lombardo, F. Palumbo, P. Kirsch, S. A. Krishnan, C. Young, R. Choi, G. Bersuker, James H. Stathis: A novel approach to characterization of progressive breakdown in high-k/metal gate stacks. Microelectronics Reliability 48(11-12): 1759-1764 (2008)

Calogero Pace, Gino Giusi, Felice Crupi, Salvatore Lombardo: Detection and Classification of Single-Electron Jumps in Si Nanocrystal Memories. IEEE T. Instrumentation and Measurement 57(2): 364-368 (2008)

Salvatore Lombardo: Guest Editorial. Microelectronics Reliability 47(4-5): 477-478 (2007)

Cosimo Gerardi, Salvatore Lombardo, Giuseppe Ammendola, Giovanni Costa, Valentina Ancarani, Domenico Mello, Stella Giuffrida, Maria Cristina Plantamura: Study of nanocrystal memory integration in a Flash-like NOR device. Microelectronics Reliability 47(4-5): 593-597 (2007)

D. Corso, S. Aurite, E. Sciacca, D. Naso, Salvatore Lombardo, A. Santangelo, M. C. Nicotra, S. Cascino: Measurement of the hot carrier damage profile in LDMOS devices stressed at high drain voltage. Microelectronics Reliability 47(4-5): 806-809 (2007)

F. Palumbo, G. Condorelli, Salvatore Lombardo, K. L. Pey, C. H. Tung, L. J. Tang: Structure of the oxide damage under progressive breakdown. Microelectronics Reliability 45(5-6): 845-848 (2005)

E. Spitale, D. Corso, I. Crupi, Salvatore Lombardo, Cosimo Gerardi: Improvement of the P/E window in nanocrystal memories by the use of high-k materials in the control dielectric. Microelectronics Reliability 45(5-6): 895-898 (2005)

James H. Stathis, Barry P. Linder, Rosana Rodríguez, Salvatore Lombardo: Reliability of ultra-thin oxides in CMOS circuits. Microelectronics Reliability 43(9-11): 1353-1360 (2003)

Rosana Rodríguez, James H. Stathis, Barry P. Linder, S. Kowalczyk, Ching-Te Chuang, Rajiv V. Joshi, Gregory A. Northrop, Kerry Bernstein, A. J. Bhavnagarwala, Salvatore Lombardo: Analysis of the effect of the gate oxide breakdown on SRAM stability. Microelectronics Reliability 42(9-11): 1445-1448 (2002)

Salvatore Lombardo, James H. Stathis, Barry P. Linder: Dependence of Post-Breakdown Conduction on Gate Oxide Thickness. Microelectronics Reliability 42(9-11): 1481-1484 (2002)