| 2012 | ||
|---|---|---|
| j3 | José Luis González, Baudouin Martineau, Didier Belot: On the electrical properties of slotted metallic planes in CMOS processes for RF and millimeter-wave applications. Microelectronics Journal 43(8): 582-591 (2012) | |
| c5 | Sophie Drean, Nathalie Deltimple, Eric Kerherve, Baudouin Martineau, Didier Belot: A 65nm CMOS 60 GHz class F-E power amplifier for WPAN applications. SBCCI 2012: 1-4 | |
| 2011 | ||
| j2 | Alexandre Siligaris, Olivier Richard, Baudouin Martineau, Christopher Mounet, Fabrice Chaix, Romain Ferragut, Cedric Dehos, Jérôme Lanteri, Laurent Dussopt, Silas D. Yamamoto, Romain Pilard, Pierre Busson, Andreia Cathelin, Didier Belot, Pierre Vincent: A 65-nm CMOS Fully Integrated Transceiver Module for 60-GHz Wireless HD Applications. J. Solid-State Circuits 46(12): 3005-3017 (2011) | |
| c4 | Mathieu Egot, Baudouin Martineau, Olivier Richard, Nathalie Rolland, Andreia Cathelin, Andreas Kaiser: A 20-23GHz Coupled Oscillators Array in 65nm CMOS for HDR 60GHz beamforming applications. ESSCIRC 2011: 463-466 | |
| c3 | Alexandre Siligaris, Olivier Richard, Baudouin Martineau, Christopher Mounet, Fabrice Chaix, Romain Ferragut, Cedric Dehos, Jérôme Lanteri, Laurent Dussopt, Silas D. Yamamoto, Romain Pilard, Pierre Busson, Andreia Cathelin, Didier Belot, Pierre Vincent: A 65nm CMOS fully integrated transceiver module for 60GHz wireless HD applications. ISSCC 2011: 162-164 | |
| 2010 | ||
| j1 | Alexandre Siligaris, Yasuhiro Hamada, Christopher Mounet, Christine Raynaud, Baudouin Martineau, Nicolas Deparis, Nathalie Rolland, Muneo Fukaishi, Pierre Vincent: A 60 GHz Power Amplifier With 14.5 dBm Saturation Power and 25% Peak PAE in CMOS 65 nm SOI. J. Solid-State Circuits 45(7): 1286-1294 (2010) | |
| c2 | Baudouin Martineau, Vincent Knopik, Alexandre Siligaris, Frederic Gianesello, Didier Belot: A 53-to-68GHz 18dBm power amplifier with an 8-way combiner in standard 65nm CMOS. ISSCC 2010: 428-429 | |
| 2005 | ||
| c1 | Vincent Knopik, Didier Belot, Baudouin Martineau: 20 dBm CMOS class AB power amplifier design for low cost 2 GHz-2.45 GHz consumer applications in a 0.13µm technology. ISCAS (3) 2005: 2675-2678 | |
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