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 | 2012 | |
|---|---|---|
| j7 |      | Renan Trevisoli Doria, João Antonio Martino, Eddy Simoen, Cor Claeys, Marcelo Antonio Pavanello: An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices. Microelectronics Reliability 52(3): 519-524 (2012) |
| 2010 | ||
| e1 |  | João Antonio Martino, Guido Araujo, Alex Orailoglu, Felipe Klein (Eds.): Proceedings of the 23rd Annual Symposium on Integrated Circuits and Systems Design, SBCCI 2010, São Paulo, Brazil, September 6-9, 2010. ACM 2010, isbn 978-1-4503-0152-7 |
| 2007 | ||
| j6 | | Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen, Cor Claeys: Study of the linear kink effect in PD SOI nMOSFETs. Microelectronics Journal 38(1): 114-119 (2007) |
| 2006 | ||
| j5 | | Salvador Pinillos Gimenez, Marcelo Antonio Pavanello, João Antonio Martino, Denis Flandre: Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS. Microelectronics Journal 37(1): 31-37 (2006) |
| j4 | | Marcelo Antonio Pavanello, Paula Ghedini Der Agopian, João Antonio Martino, Denis Flandre: Cryogenic operation of graded-channel silicon-on-insulator nMOSFETs for high performance analog applications. Microelectronics Journal 37(2): 137-144 (2006) |
| j3 | | Milene Galeti, Marcelo Antonio Pavanello, João Antonio Martino: Evaluation of graded-channel SOI MOSFET operation at high temperatures. Microelectronics Journal 37(7): 601-607 (2006) |
| j2 | | Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen, Cor Claeys: Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS. Microelectronics Journal 37(8): 681-685 (2006) |
| j1 | | L. M. Camillo, João Antonio Martino, Eddy Simoen, Cor Claeys: The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETs. Microelectronics Journal 37(9): 952-957 (2006) |
| 2003 | ||
| c1 | | Salvador Pinillos Gimenez, Marcelo Antonio Pavanello, João Antonio Martino, S. Adriaensen, Denis Flandre: Design of Operational Transconductance Amplifiers with Improved Gain by Using Graded-Channel SOI nMOSFETs. SBCCI 2003: 26- |
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