| 2012 | ||
|---|---|---|
| j14 | Matteo Meneghini, Matteo Dal Lago, Nicola Trivellin, Giovanna Mura, Massimo Vanzi, Gaudenzio Meneghesso, Enrico Zanoni: Chip and package-related degradation of high power white LEDs. Microelectronics Reliability 52(5): 804-812 (2012) | |
| j13 | Matteo Meneghini, Matteo Dal Lago, L. Rodighiero, Nicola Trivellin, Enrico Zanoni, Gaudenzio Meneghesso: Reliability issues in GaN-based light-emitting diodes: Effect of dc and PWM stress. Microelectronics Reliability 52(8): 1621-1626 (2012) | |
| j12 | Isabella Rossetto, Matteo Meneghini, Tiziana Tomasi, Dai Yufeng, Gaudenzio Meneghesso, Enrico Zanoni: Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits. Microelectronics Reliability 52(9-10): 2093-2097 (2012) | |
| j11 | Matteo Dal Lago, Matteo Meneghini, Nicola Trivellin, Giovanna Mura, Massimo Vanzi, Gaudenzio Meneghesso, Enrico Zanoni: Phosphors for LED-based light sources: Thermal properties and reliability issues. Microelectronics Reliability 52(9-10): 2164-2167 (2012) | |
| j10 | P. Marko, Matteo Meneghini, Sergey Bychikhin, D. Marcon, Gaudenzio Meneghesso, Enrico Zanoni, Dionyz Pogany: IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors. Microelectronics Reliability 52(9-10): 2194-2199 (2012) | |
| j9 | A. Zanandrea, Eldad Bahat-Treidel, F. Rampazzo, A. Stocco, Matteo Meneghini, Enrico Zanoni, O. Hilt, Ponky Ivo, J. Wuerfl, Gaudenzio Meneghesso: Single- and double-heterostructure GaN-HEMTs devices for power switching applications. Microelectronics Reliability 52(9-10): 2426-2430 (2012) | |
| 2011 | ||
| j8 | Matteo Dal Lago, Matteo Meneghini, Nicola Trivellin, Gaudenzio Meneghesso, Enrico Zanoni: Degradation mechanisms of high-power white LEDs activated by current and temperature. Microelectronics Reliability 51(9-11): 1742-1746 (2011) | |
| j7 | Nicola Trivellin, Matteo Meneghini, C. De Santi, S. Vaccari, Gaudenzio Meneghesso, Enrico Zanoni, Kenji Orita, S. Takigawa, Tsuyoshi Tanaka, Daisuke Ueda: Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency. Microelectronics Reliability 51(9-11): 1747-1751 (2011) | |
| 2010 | ||
| j6 | Matteo Meneghini, Nicola Trivellin, Kenji Orita, Masaaki Yuri, Tsuyoshi Tanaka, Daisuke Ueda, Enrico Zanoni, Gaudenzio Meneghesso: Reliability evaluation for Blu-Ray laser diodes. Microelectronics Reliability 50(4): 467-470 (2010) | |
| j5 | Matteo Meneghini, D. Barbisan, Y. Bilenko, M. Shatalov, J. Yang, R. Gaska, Gaudenzio Meneghesso, Enrico Zanoni: Defect-related degradation of Deep-UV-LEDs. Microelectronics Reliability 50(9-11): 1538-1542 (2010) | |
| 2009 | ||
| j4 | Nicola Trivellin, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Kenji Orita, Masaaki Yuri, Tsuyoshi Tanaka, Daisuke Ueda: Reliability analysis of InGaN Blu-Ray laser diode. Microelectronics Reliability 49(9-11): 1236-1239 (2009) | |
| 2007 | ||
| j3 | Matteo Meneghini: An Analysis of the Compositional Techniques in John Chowning's Stria. Computer Music Journal 31(3): 26-37 (2007) | |
| j2 | Matteo Meneghini, L. Trevisanello, C. Sanna, G. Mura, Massimo Vanzi, Gaudenzio Meneghesso, Enrico Zanoni: High temperature electro-optical degradation of InGaN/GaN HBLEDs. Microelectronics Reliability 47(9-11): 1625-1629 (2007) | |
| 2006 | ||
| j1 | Matteo Meneghini, Simona Podda, A. Morelli, Ruggero Pintus, L. Trevisanello, Gaudenzio Meneghesso, Massimo Vanzi, Enrico Zanoni: High brightness GaN LEDs degradation during dc and pulsed stress. Microelectronics Reliability 46(9-11): 1720-1724 (2006) | |
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