- 2012
[j1]
Jung-Sik Kim,
Chi Sung Oh,
Hocheol Lee,
Donghyuk Lee,
Hyong-Ryol Hwang,
Sooman Hwang,
Byongwook Na,
Joungwook Moon,
Jin-Guk Kim,
Hanna Park,
Jang-Woo Ryu,
Kiwon Park,
Sang-Kyu Kang,
So-Young Kim,
Hoyoung Kim,
Jong-Min Bang,
Hyunyoon Cho,
Minsoo Jang,
Cheolmin Han,
Jung-Bae Lee,
Joo-Sun Choi,
Young-Hyun Jun:
A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 × 128 I/Os Using TSV Based Stacking. J. Solid-State Circuits 47(1): 107-116 (2012)
- 2011
[c1]
Jung-Sik Kim,
Chi Sung Oh,
Hocheol Lee,
Donghyuk Lee,
Hyong-Ryol Hwang,
Sooman Hwang,
Byongwook Na,
Joungwook Moon,
Jin-Guk Kim,
Hanna Park,
Jang-Woo Ryu,
Kiwon Park,
Sang-Kyu Kang,
So-Young Kim,
Hoyoung Kim,
Jong-Min Bang,
Hyunyoon Cho,
Minsoo Jang,
Cheolmin Han,
Jung-Bae Lee,
Kyehyun Kyung,
Joo-Sun Choi,
Young-Hyun Jun:
A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using TSV-based stacking. ISSCC 2011: 496-498
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