- 2012
[c1]
Youngseung Cho,
Yoosang Hwang,
Huijung Kim,
Eunok Lee,
Soojin Hong,
Hyun-Woo Chung,
Daeik Kim,
Jinyoung Kim,
Yong Chul Oh,
Hyeongsun Hong,
Gyo-Young Jin,
Chilhee Chung:
Novel Deep Trench Buried-Body-Contact (DBBC) of 4F2 cell for sub 30nm DRAM technology. ESSDERC 2012: 193-196
- 2010
[j1]
Ki-Whan Song,
Jinyoung Kim,
Jae-Man Yoon,
Sua Kim,
Huijung Kim,
Hyun-Woo Chung,
Hyungi Kim,
Kanguk Kim,
Hwan-Wook Park,
Hyun Chul Kang,
Nam-Kyun Tak,
Dukha Park,
Woo-Seop Kim,
Yeong-Taek Lee,
Yong Chul Oh,
Gyo-Young Jin,
Jei-Hwan Yoo,
Donggun Park,
Kyungseok Oh,
Changhyun Kim,
Young-Hyun Jun:
A 31 ns Random Cycle VCAT-Based 4F 2 DRAM With Manufacturability and Enhanced Cell Efficiency. J. Solid-State Circuits 45(4): 880-888 (2010)
data released under the ODC-BY 1.0 license. See also our legal information page