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Albena Paskaleva
2010 – today
- 2012
[j12]E. Atanassova, Albena Paskaleva, D. Spassov: Doped Ta2O5 and mixed HfO2-Ta2O5 films for dynamic memories applications at the nanoscale. Microelectronics Reliability 52(4): 642-650 (2012)- 2011
- [j11]D. Spassov, E. Atanassova, Albena Paskaleva: Lightly Al-doped Ta2O5: Electrical properties and mechanisms of conductivity. Microelectronics Reliability 51(12): 2102-2109 (2011)
- 2010
- [j10]E. Atanassova, N. Novkovski, Albena Paskaleva, D. Spassov: Constant current stress-induced leakage current in mixed HfO2-Ta2O5 stacks. Microelectronics Reliability 50(6): 794-800 (2010)
2000 – 2009
- 2008
- [j9]E. Atanassova, Albena Paskaleva, N. Novkovski: Effects of the metal gate on the stress-induced traps in Ta2O5/SiO2 stacks. Microelectronics Reliability 48(4): 514-525 (2008)
- [j8]E. Atanassova, Ninoslav Stojadinovic, Albena Paskaleva: Degradation behavior of Ta2O5 stacks and its dependence on the gate electrode. Microelectronics Reliability 48(8-9): 1193-1197 (2008)
- 2007
- [j7]E. Atanassova, Albena Paskaleva: Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs. Microelectronics Reliability 47(6): 913-923 (2007)
- [j6]E. Atanassova, D. Spassov, Albena Paskaleva: Metal gates and gate-deposition-induced defects in Ta2O5 stack capacitors. Microelectronics Reliability 47(12): 2088-2093 (2007)
- [j5]Albena Paskaleva, Martin Lemberger, Anton J. Bauer: Polarity asymmetry of stress and charge trapping behavior of thin Hf- and Zr-silicate layers. Microelectronics Reliability 47(12): 2094-2099 (2007)
- 2005
- [j4]Martin Lemberger, Albena Paskaleva, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel: Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor. Microelectronics Reliability 45(5-6): 819-822 (2005)
- [j3]Albena Paskaleva, Anton J. Bauer, Martin Lemberger: Conduction mechanisms and an evidence for phonon-assisted conduction process in thin high-k HfxTiySizO films. Microelectronics Reliability 45(7-8): 1124-1133 (2005)
- 2003
- [j2]Albena Paskaleva, Martin Lemberger, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel: Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors. Microelectronics Reliability 43(8): 1253-1257 (2003)
- 2002
- [j1]E. Atanassova, Albena Paskaleva: Breakdown fields and conduction mechanisms in thin Ta2O5 layers on Si for high density DRAMs. Microelectronics Reliability 42(2): 157-173 (2002)
Coauthor Index
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last updated on 2012-12-02 21:25 CET by the dblp team