Marcelo Antonio Pavanello

Renan Trevisoli Doria, João Antonio Martino, Eddy Simoen, Cor Claeys, Marcelo Antonio Pavanello: An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices. Microelectronics Reliability 52(3): 519-524 (2012)

Rodrigo Trevisoli Doria, Antonio Cerdeira, Jean-Pierre Raskin, Denis Flandre, Marcelo Antonio Pavanello: Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation. Microelectronics Journal 39(12): 1663-1670 (2008)

Salvador Pinillos Gimenez, Marcelo Antonio Pavanello, João Antonio Martino, Denis Flandre: Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS. Microelectronics Journal 37(1): 31-37 (2006)

Marcelo Antonio Pavanello, Paula Ghedini Der Agopian, João Antonio Martino, Denis Flandre: Cryogenic operation of graded-channel silicon-on-insulator nMOSFETs for high performance analog applications. Microelectronics Journal 37(2): 137-144 (2006)

Milene Galeti, Marcelo Antonio Pavanello, João Antonio Martino: Evaluation of graded-channel SOI MOSFET operation at high temperatures. Microelectronics Journal 37(7): 601-607 (2006)

Salvador Pinillos Gimenez, Marcelo Antonio Pavanello, João Antonio Martino, S. Adriaensen, Denis Flandre: Design of Operational Transconductance Amplifiers with Improved Gain by Using Graded-Channel SOI nMOSFETs. SBCCI 2003: 26-