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Heiner Ryssel

2010 – today

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2011
[j10]
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  - journals/mr/Le-HuuSNGSBFR11
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Martin Le-Huu, Holger Schmitt, Stefan Noll, Michael Grieb, Frederik F. Schrey, Anton J. Bauer, Lothar Frey, Heiner Ryssel: Investigation of the reliability of 4H-SiC MOS devices for high temperature applications. Microelectronics Reliability 51(8): 1346-1350 (2011)

2000 – 2009

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2007
[j9]
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  - journals/mr/RommelBR07
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M. Rommel, Anton J. Bauer, Heiner Ryssel: Quantitative oxide charge determination by photocurrent analysis. Microelectronics Reliability 47(4-5): 673-677 (2007)
2005
[j8]
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  - journals/mr/LembergerPZBFR05
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Martin Lemberger, Albena Paskaleva, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel: Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor. Microelectronics Reliability 45(5-6): 819-822 (2005)
2003
[j7]
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  - journals/mr/PaskalevaLZBFR03
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Albena Paskaleva, Martin Lemberger, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel: Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors. Microelectronics Reliability 43(8): 1253-1257 (2003)
2001
[j6]
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  - journals/mr/JankLBFR01
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M. P. M. Jank, Martin Lemberger, Anton J. Bauer, Lothar Frey, Heiner Ryssel: Electrical reliability aspects of through the gate implanted MOS structures with thin oxides. Microelectronics Reliability 41(7): 987-990 (2001)
[j5]
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  - journals/mr/StrobelBBR01
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S. Strobel, Anton J. Bauer, Matthias Beichele, Heiner Ryssel: Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices. Microelectronics Reliability 41(7): 1085-1088 (2001)
[j4]
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  - journals/mr/BeicheleBR01
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Matthias Beichele, Anton J. Bauer, Heiner Ryssel: Reliability of ultrathin nitrided oxides grown in low pressure N₂O ambient. Microelectronics Reliability 41(7): 1089-1092 (2001)

1990 – 1999

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1998
[j3]
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  - journals/tcad/BohmayrBLRS98
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Walter Bohmayr, Alexander Burenkov, Jürgen Lorenz, Heiner Ryssel, Siegfried Selberherr: Monte Carlo simulation of silicon amorphization during ion implantation. IEEE Trans. on CAD of Integrated Circuits and Systems 17(12): 1236-1243 (1998)
1990
[j2]
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  - journals/ett/PichlerR90
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Peter Pichler, Heiner Ryssel: Simulation of silicon semiconductor processing. European Transactions on Telecommunications 1(3): 293-299 (1990)

1980 – 1989

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1985
[j1]
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  - journals/tcad/LorenzPRSSS85
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Jürgen Lorenz, Joachim Pelka, Heiner Ryssel, Albert Sachs, Albert Seidl, Milos Svoboda: COMPOSITE -- A Complete Modeling Program of Silicon Technology. IEEE Trans. on CAD of Integrated Circuits and Systems 4(4): 421-430 (1985)