 | 2013 |
| c4 |  | Masanori Natsui, Daisuke Suzuki, Noboru Sakimura, Ryusuke Nebashi, Yukihide Tsuji, Ayuka Morioka, Tadahiko Sugibayashi, Sadahiko Miura, Hiroaki Honjo, Keizo Kinoshita, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu: Nonvolatile logic-in-memory array processor in 90nm MTJ/MOS achieving 75% leakage reduction using cycle-based power gating. ISSCC 2013: 194-195 |
| 2012 |
| j4 |  | |
| c3 |  | Noboru Sakimura, Ryusuke Nebashi, Yukihide Tsuji, Hiroaki Honjo, Tadahiko Sugibayashi, Hiroki Koike, Takashi Ohsawa, Shunsuke Fukami, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh: High-speed simulator including accurate MTJ models for spintronics integrated circuit design. ISCAS 2012: 1971-1974 |
| 2011 |
| c2 |  | Makoto Miyamura, Shogo Nakaya, Munehiro Tada, Toshitsugu Sakamoto, Koichiro Okamoto, Naoki Banno, Shinji Ishida, Kimihiko Ito, Hiromitsu Hada, Noboru Sakimura, Tadahiko Sugibayashi, Masato Motomura: Programmable cell array using rewritable solid-electrolyte switch integrated in 90nm CMOS. ISSCC 2011: 228-229 |
| 2009 |
| j3 |  | |
| c1 |  | Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo, Shinsaku Saito, Yuichi Ito, Sadahiko Miura, Yuko Kato, Kaoru Mori, Yasuaki Ozaki, Yosuke Kobayashi, Norikazu Ohshima, Keizo Kinoshita, Tetsuhiro Suzuki, Kiyokazu Nagahara, Nobuyuki Ishiwata, Katsumi Suemitsu, Shunsuke Fukami, Hiromitsu Hada, Tadahiko Sugibayashi, Naoki Kasai: A 90nm 12ns 32Mb 2T1MTJ MRAM. ISSCC 2009: 462-463 |
| 2007 |
| j2 |  | |
| j1 |  | |