| 2012 | ||
|---|---|---|
| j60 | Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr: Emerging memory technologies: Trends, challenges, and modeling methods. Microelectronics Reliability 52(4): 628-634 (2012) | |
| j59 | Hajdin Ceric, Roberto Lacerda de Orio, Siegfried Selberherr: Interconnect reliability dependence on fast diffusivity paths. Microelectronics Reliability 52(8): 1532-1538 (2012) | |
| j58 | R. L. de Orio, Hajdin Ceric, Siegfried Selberherr: Electromigration failure in a copper dual-damascene structure with a through silicon via. Microelectronics Reliability 52(9-10): 1981-1986 (2012) | |
| c33 | Hiwa Mahmoudi, Viktor Sverdlov, Siegfried Selberherr: MTJ-based implication logic gates and circuit architecture for large-scale spintronic stateful logic systems. ESSDERC 2012: 254-257 | |
| c32 | Volodymyr Kysenko, Karl Rupp, Oleksandr Marchenko, Siegfried Selberherr, Anatoly Anisimov: GPU-Accelerated Non-negative Matrix Factorization for Text Mining. NLDB 2012: 158-163 | |
| c31 | Jorge Rodríguez, Josef Weinbub, Dieter Pahr, Karl Rupp, Siegfried Selberherr: Distributed High-Performance Parallel Mesh Generation with ViennaMesh. PARA 2012: 548-552 | |
| c30 | Josef Weinbub, Karl Rupp, Siegfried Selberherr: A Lightweight Task Graph Scheduler for Distributed High-Performance Scientific Computing. PARA 2012: 563-566 | |
| 2011 | ||
| j57 | R. L. de Orio, Hajdin Ceric, Siegfried Selberherr: A compact model for early electromigration failures of copper dual-damascene interconnects. Microelectronics Reliability 51(9-11): 1573-1577 (2011) | |
| c29 | Lado Filipovic, Hajdin Ceric, Johann Cervenka, Siegfried Selberherr: A simulator for local anodic oxidation of silicon surfaces. CCECE 2011: 695-698 | |
| c28 | Josef Weinbub, Karl Rupp, Siegfried Selberherr: Towards Distributed Heterogenous High-Performance Computing with ViennaCL. LSSC 2011: 359-367 | |
| c27 | Lado Filipovic, Siegfried Selberherr: A Monte Carlo Simulator for Non-contact Mode Atomic Force Microscopy. LSSC 2011: 447-454 | |
| c26 | Philipp Schwaha, Mihail Nedjalkov, Siegfried Selberherr, Ivan Dimov: Phonon-Induced Decoherence in Electron Evolution. LSSC 2011: 472-479 | |
| c25 | D. Osintsev, Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr: Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins. LSSC 2011: 630-637 | |
| 2010 | ||
| j56 | R. L. de Orio, Hajdin Ceric, Siegfried Selberherr: Physically based models of electromigration: From Black's equation to modern TCAD models. Microelectronics Reliability 50(6): 775-789 (2010) | |
| j55 | Karl Rupp, Siegfried Selberherr: The Economic Limit to Moore's Law [Point of View]. Proceedings of the IEEE 98(3): 351-353 (2010) | |
| c24 | Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr: Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations. NMA 2010: 87-94 | |
| c23 | Mihail Nedjalkov, Siegfried Selberherr, Ivan Dimov: Stochastic Algorithm for Solving the Wigner-Boltzmann Correction Equation. NMA 2010: 95-102 | |
| 2009 | ||
| j54 | Otmar Ertl, Siegfried Selberherr: A fast level set framework for large three-dimensional topography simulations. Computer Physics Communications 180(8): 1242-1250 (2009) | |
| j53 | René Heinzl, Philipp Schwaha, Franz Stimpfl, Siegfried Selberherr: GUIDE: Parallel library-centric application design by a generic scientific simulation environment. IJPEDS 24(6): 505-520 (2009) | |
| j52 | Philipp Schwaha, René Heinzl, Franz Stimpfl, Siegfried Selberherr: Synergies in scientific computing by combining multi-paradigmatic languages for high-performance applications. IJPEDS 24(6): 539-549 (2009) | |
| c22 | Thomas Windbacher, Viktor Sverdlov, Siegfried Selberherr, Clemens Heitzinger, Norbert J. Mauser, Christian A. Ringhofer: Study of the Properties of Biotin-streptavidin Sensitive BioFETs. BIODEVICES 2009: 24-30 | |
| c21 | Mihail Nedjalkov, Philipp Schwaha, O. Baumgartner, Siegfried Selberherr: Particle Model of the Scattering-Induced Wigner Function Correction. LSSC 2009: 411-418 | |
| c20 | M. Vasicek, Viktor Sverdlov, Johann Cervenka, Tibor Grasser, Hans Kosina, Siegfried Selberherr: Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models. LSSC 2009: 443-450 | |
| 2008 | ||
| j51 | Mahdi Pourfath, Hans Kosina, Siegfried Selberherr: Numerical study of quantum transport in carbon nanotube transistors. Mathematics and Computers in Simulation 79(4): 1051-1059 (2008) | |
| j50 | Enzo Ungersboeck, Wolfgang Gös, S. Dhar, Hans Kosina, Siegfried Selberherr: The effect of uniaxial stress on band structure and electron mobility of silicon. Mathematics and Computers in Simulation 79(4): 1071-1077 (2008) | |
| 2007 | ||
| j49 | Viktor Sverdlov, Hans Kosina, Siegfried Selberherr: Modeling current transport in ultra-scaled field-effect transistors. Microelectronics Reliability 47(1): 11-19 (2007) | |
| j48 | Stefan Holzer, Alireza Sheikholeslami, Markus Karner, Tibor Grasser, Siegfried Selberherr: Comparison of deposition models for a TEOS LPCVD process. Microelectronics Reliability 47(4-5): 623-625 (2007) | |
| j47 | Markus Karner, Andreas Gehring, M. Wagner, R. Entner, Stefan Holzer, Wolfgang Gös, M. Vasicek, Tibor Grasser, Hans Kosina, Siegfried Selberherr: VSP - A gate stack analyzer. Microelectronics Reliability 47(4-5): 704-708 (2007) | |
| j46 | ||
| c19 | René Heinzl, Philipp Schwaha, Siegfried Selberherr: Modern Concepts for High-Perfomance Scientific Computing - Library Centric Application Design. ICSOFT (SE) 2007: 100-107 | |
| c18 | Philipp Schwaha, Markus Schwaha, René Heinzl, Enzo Ungersboeck, Siegfried Selberherr: Simulation Methodologies for Scientific Computing - Modern Application Design. ICSOFT (SE) 2007: 270-276 | |
| c17 | Alexandre Nentchev, Siegfried Selberherr: Three-dimensional on-chip inductance and resistance extraction. SBCCI 2007: 218-223 | |
| 2006 | ||
| j45 | Johann Cervenka, W. Wessner, E. Al-Ani, Tibor Grasser, Siegfried Selberherr: Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations. IEEE Trans. on CAD of Integrated Circuits and Systems 25(10): 2118-2128 (2006) | |
| j44 | W. Wessner, Johann Cervenka, Clemens Heitzinger, Andreas Hössinger, Siegfried Selberherr: Anisotropic Mesh Refinement for the Simulation of Three-Dimensional Semiconductor Manufacturing Processes. IEEE Trans. on CAD of Integrated Circuits and Systems 25(10): 2129-2139 (2006) | |
| c16 | Michael Spevak, René Heinzl, Philipp Schwaha, Siegfried Selberherr: A Computational Framework for Topological Operations. PARA 2006: 781-790 | |
| c15 | René Heinzl, Michael Spevak, Philipp Schwaha, Siegfried Selberherr: A High Performance Generic Scientific Simulation Environment. PARA 2006: 996-1005 | |
| 2005 | ||
| j43 | Stephan Wagner, Tibor Grasser, Claus Fischer, Siegfried Selberherr: An advanced equation assembly module. Eng. Comput. (Lond.) 21(2): 151-163 (2005) | |
| j42 | Clemens Heitzinger, Alireza Sheikholeslami, Jong Mun Park, Siegfried Selberherr: A method for generating structurally aligned grids for semiconductor device simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 24(10): 1485-1491 (2005) | |
| c14 | Viktor Sverdlov, Hans Kosina, Christian A. Ringhofer, Mihail Nedjalkov, Siegfried Selberherr: Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator. LSSC 2005: 594-601 | |
| 2004 | ||
| j41 | Hans Kosina, Mihail Nedjalkov, Siegfried Selberherr: Solution of the Space-dependent Wigner Equation Using a Particle Model. Monte Carlo Meth. and Appl. 10(3-4): 359-368 (2004) | |
| j40 | Mihail Nedjalkov, Emanouil I. Atanassov, Hans Kosina, Siegfried Selberherr: Operator-Split Method for Variance Reduction in Stochastic Solutions of the Wigner Equation. Monte Carlo Meth. and Appl. 10(3-4): 461-468 (2004) | |
| j39 | Clemens Heitzinger, Andreas Hössinger, Siegfried Selberherr: An algorithm for smoothing three-dimensional Monte Carlo ion implantation simulation results. Mathematics and Computers in Simulation 66(2-3): 219-230 (2004) | |
| j38 | Clemens Heitzinger, Siegfried Selberherr: On the simulation of the formation and dissolution of silicon self-interstitial clusters and the corresponding inverse modeling problem. Microelectronics Journal 35(2): 167-171 (2004) | |
| j37 | Jong Mun Park, R. Klima, Siegfried Selberherr: High-voltage lateral trench gate SOI-LDMOSFETs. Microelectronics Journal 35(3): 299-304 (2004) | |
| j36 | Stefan Holzer, Rainer Minixhofer, Clemens Heitzinger, Johannes Fellner, Tibor Grasser, Siegfried Selberherr: Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures. Microelectronics Journal 35(10): 805-810 (2004) | |
| j35 | Vassil Palankovski, Siegfried Selberherr: Rigorous modeling of high-speed semiconductor devices. Microelectronics Reliability 44(6): 889-897 (2004) | |
| j34 | Christian A. Ringhofer, Hans Kosina, Mihail Nedjalkov, Siegfried Selberherr: Semiclassical Approximation of Electron-Phonon Scattering Beyond Fermi's Golden Rule. SIAM Journal of Applied Mathematics 64(6): 1933-1953 (2004) | |
| j33 | Thomas Binder, Clemens Heitzinger, Siegfried Selberherr: A study on global and local optimization techniques for TCAD analysis tasks. IEEE Trans. on CAD of Integrated Circuits and Systems 23(6): 814-822 (2004) | |
| 2003 | ||
| b1 | Robert Klima, Siegfried Selberherr: Programmieren in C. Springer 2003, isbn 978-3-211-40514-7, pp. I-XVI, 1-354 | |
| j32 | Hans Kosina, Mihail Nedjalkov, Siegfried Selberherr: An event bias technique for Monte Carlo device simulation. Mathematics and Computers in Simulation 62(3-6): 367-375 (2003) | |
| j31 | Mihail Nedjalkov, Hans Kosina, Siegfried Selberherr: Monte Carlo algorithms for stationary device simulations. Mathematics and Computers in Simulation 62(3-6): 453-461 (2003) | |
| j30 | Mihail Nedjalkov, Hans Kosina, Siegfried Selberherr: Stochastic interpretation of the Wigner transport in nanostructures. Microelectronics Journal 34(5-8): 443-445 (2003) | |
| j29 | Christian Harlander, Rainer Sabelka, Siegfried Selberherr: Efficient inductance calculation in interconnect structures by applying the Monte Carlo method. Microelectronics Journal 34(9): 815-821 (2003) | |
| j28 | Andreas Gehring, F. Jiménez-Molinos, Hans Kosina, A. Palma, F. Gámiz, Siegfried Selberherr: Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices. Microelectronics Reliability 43(9-11): 1495-1500 (2003) | |
| j27 | T. Ayalew, Andreas Gehring, Jong Mun Park, Tibor Grasser, Siegfried Selberherr: Improving SiC lateral DMOSFET reliability under high field stress. Microelectronics Reliability 43(9-11): 1889-1894 (2003) | |
| j26 | Clemens Heitzinger, Wolfgang Pyka, Naoki Tamaoki, Toshiro Takase, Toshimitsu Ohmine, Siegfried Selberherr: Simulation of arsenic in situ doping with polysilicon CVD and its application to high aspect ratio trenches. IEEE Trans. on CAD of Integrated Circuits and Systems 22(3): 285-292 (2003) | |
| j25 | Clemens Heitzinger, Andreas Hössinger, Siegfried Selberherr: On smoothing three-dimensional Monte Carlo ion implantation simulation results. IEEE Trans. on CAD of Integrated Circuits and Systems 22(7): 879-883 (2003) | |
| j24 | Thomas Binder, Andreas Hössinger, Siegfried Selberherr: Rigorous integration of semiconductor process and device simulators. IEEE Trans. on CAD of Integrated Circuits and Systems 22(9): 1204-1214 (2003) | |
| c13 | Hans Kosina, Mihail Nedjalkov, Siegfried Selberherr: A Stable Backward Monte Carlo Method for the Solution of the Boltzmann Equation. LSSC 2003: 170-177 | |
| c12 | Mihail Nedjalkov, Hans Kosina, Siegfried Selberherr: A Weight Decomposition Approach to the Sign Problem in Wigner Transport Simulations. LSSC 2003: 178-184 | |
| c11 | Sergey Smirnov, Hans Kosina, Mihail Nedjalkov, Siegfried Selberherr: A Zero Field Monte Carlo Algorithm Accounting for the Pauli Exclusion Principle. LSSC 2003: 185-193 | |
| 2002 | ||
| j23 | Hajdin Ceric, Siegfried Selberherr: Simulative prediction of the resistance change due to electromigration induced void evolution. Microelectronics Reliability 42(9-11): 1457-1460 (2002) | |
| c10 | Clemens Heitzinger, Siegfried Selberherr: On the Topography Simulation of Memory Cell Trenches for Semiconductor Manufacturing Deposition Processes using the Level Set Method. ESM 2002: 653-660 | |
| 2001 | ||
| c9 | Hans Kosina, Mihail Nedjalkov, Siegfried Selberherr: Monte Carlo Analysis of the Small-Signal Response of Charge Carriers. LSSC 2001: 175-182 | |
| 2000 | ||
| j22 | Andreas Hössinger, Erasmus Langer, Siegfried Selberherr: Parallelization of a Monte Carlo ion implantation simulator. IEEE Trans. on CAD of Integrated Circuits and Systems 19(5): 560-567 (2000) | |
| j21 | Robert Kosik, Peter Fleischmann, Bernhard Haindl, Paola Pietra, Siegfried Selberherr: On the interplay between meshing and discretization inthree-dimensional diffusion simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 19(11): 1233-1240 (2000) | |
| c8 | ||
| 1999 | ||
| j20 | Wolfgang Pyka, Peter Fleischmann, Bernhard Haindl, Siegfried Selberherr: Three-dimensional simulation of HPCVD-linking continuum transport and reaction kinetics with topography simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 18(12): 1741-1749 (1999) | |
| c7 | ||
| c6 | Peter Fleischmann, Robert Kosik, Siegfried Selberherr: Simple Mesh Examples to Illustrate Specific Finite Element Mesh Requirements. IMR 1999: 241-246 | |
| 1998 | ||
| j19 | Ernst Leitner, Siegfried Selberherr: Mixed-element decomposition method for three-dimensional grid adaptation. IEEE Trans. on CAD of Integrated Circuits and Systems 17(7): 561-572 (1998) | |
| j18 | Rui Martins, Wolfgang Pyka, Rainer Sabelka, Siegfried Selberherr: High-precision interconnect analysis. IEEE Trans. on CAD of Integrated Circuits and Systems 17(11): 1148-1159 (1998) | |
| j17 | Walter Bohmayr, Alexander Burenkov, Jürgen Lorenz, Heiner Ryssel, Siegfried Selberherr: Monte Carlo simulation of silicon amorphization during ion implantation. IEEE Trans. on CAD of Integrated Circuits and Systems 17(12): 1236-1243 (1998) | |
| j16 | Richard Plasun, Michael Stockinger, Siegfried Selberherr: Integrated optimization capabilities in the VISTA technology CAD framework. IEEE Trans. on CAD of Integrated Circuits and Systems 17(12): 1244-1251 (1998) | |
| 1997 | ||
| j15 | Christoph Wasshuber, Hans Kosina, Siegfried Selberherr: SIMON-A simulator for single-electron tunnel devices and circuits. IEEE Trans. on CAD of Integrated Circuits and Systems 16(9): 937-944 (1997) | |
| j14 | Heinrich Kirchauer, Siegfried Selberherr: Rigorous three-dimensional photoresist exposure and development simulation over nonplanar topography. IEEE Trans. on CAD of Integrated Circuits and Systems 16(12): 1431-1438 (1997) | |
| 1995 | ||
| j13 | Ernst Strasser, Siegfried Selberherr: Algorithms and models for cellular based topography simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 14(9): 1104-1114 (1995) | |
| j12 | Stefan Halama, Christoph Pichler, Gerhard Rieger, Gerhard Schrom, Thomas Simlinger, Siegfried Selberherr: VISTA-user interface, task level, and tool integration. IEEE Trans. on CAD of Integrated Circuits and Systems 14(10): 1208-1222 (1995) | |
| 1994 | ||
| j11 | Franz Fasching, Walter Tuppa, Siegfried Selberherr: VISTA-the data level. IEEE Trans. on CAD of Integrated Circuits and Systems 13(1): 72-81 (1994) | |
| j10 | Hans Kosina, Siegfried Selberherr: A hybrid device simulator that combines Monte Carlo and drift-diffusion analysis. IEEE Trans. on CAD of Integrated Circuits and Systems 13(2): 201-210 (1994) | |
| 1992 | ||
| j9 | Gerd Nanz, Peter Dickinger, Siegfried Selberherr: Calculation of contact currents in device simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 11(1): 128-136 (1992) | |
| 1991 | ||
| c5 | Karl P. Traar, Martin Stiftinger, Otto Heinreichsberger, Siegfried Selberherr: Three-dimensional simulation of semiconductor devices on supercomputers. ICS 1991: 154-162 | |
| c4 | Otto Heinreichsberger, Siegfried Selberherr, Martin Stiftinger: Three-Dimensional MOS Device Simulation on a Connection Machine. PPSC 1991: 388-393 | |
| 1990 | ||
| j8 | Martin Thurner, Siegfried Selberherr: Three-dimensional effects due to the field oxide in MOS devices analyzed with MINIMOS 5. IEEE Trans. on CAD of Integrated Circuits and Systems 9(8): 856-867 (1990) | |
| j7 | Martin Thurner, Philipp Lindorfer, Siegfried Selberherr: Numerical treatment of nonrectangular field-oxide for 3-D MOSFET simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 9(11): 1189-1197 (1990) | |
| c3 | Karl P. Traar, Wolfgang R. Mader, Otto Heinreichsberger, Siegfried Selberherr, Martin Stiftinger: High performance preconditioning on supercomputers for the 3D device simulator MINIMOS. SC 1990: 224-231 | |
| 1989 | ||
| j6 | Gerhard Hobler, Siegfried Selberherr: Monte Carlo simulation of ion implantation into two- and three-dimensional structures. IEEE Trans. on CAD of Integrated Circuits and Systems 8(5): 450-459 (1989) | |
| 1988 | ||
| j5 | Gerhard Hobler, Siegfried Selberherr: Two-dimensional modeling of ion implantation induced point defects. IEEE Trans. on CAD of Integrated Circuits and Systems 7(2): 174-180 (1988) | |
| 1985 | ||
| j4 | Peter Pichler, Werner Jüngling, Siegfried Selberherr, Edgar Guerrero, Hans W. Pötzl: Simulation of Critical IC-Fabrication Steps. IEEE Trans. on CAD of Integrated Circuits and Systems 4(4): 384-397 (1985) | |
| 1984 | ||
| j3 | Siegfried Selberherr, Christian A. Ringhofer: Implications of Analytical Investigations About the Semiconductor Equations on Device Modeling Programs. IEEE Trans. on CAD of Integrated Circuits and Systems 3(1): 52-64 (1984) | |
| j2 | Johannes Demel, Siegfried Selberherr: VDPACK - Ein benutzerorientiertes Unterprogrammpaket zur Realisierung einer dynamischen Speicherverwaltung in FORTRAN. Angewandte Informatik 26(6): 244-247 (1984) | |
| c2 | Johannes Demel, Siegfried Selberherr: JANAP - ein Programm zur Simulation des Zeitverhaltens von nichtlinearen elektrischen Schaltungen. Simulationstechnik 1984: 149-153 | |
| c1 | Siegfried Selberherr, Hans W. Pötzl: Numerische Simulation von Halbleiterbauelementen. Simulationstechnik 1984: 154-158 | |
| 1982 | ||
| j1 | A. Schütz, Siegfried Selberherr, Hans W. Pötzl: Analysis of Breakdown Phenomena in MOSFET's. IEEE Trans. on CAD of Integrated Circuits and Systems 1(2): 77-85 (1982) | |
Colors in the list of coauthors
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