| 2012 | ||
|---|---|---|
| j1 | A. Ohata, Y. Bae, Sorin Cristoloveanu, Thomas Signamarcheix, J. Widiez, B. Ghyselen, Olivier Faynot, Laurent Clavelier: Deep-amorphization and solid-phase epitaxial regrowth processes for hybrid orientation technologies in SOI MOSFETs with thin body. Microelectronics Reliability 52(11): 2602-2608 (2012) | |
| 2011 | ||
| c4 | Léa Di Cioccio, Rachid Taibi, C. Chappaz, S. Moreau, Laurent-Luc Chapelon, Thomas Signamarcheix: 200°C direct bonding copper interconnects : Electrical results and reliability. 3DIC 2011: 1-4 | |
| 2010 | ||
| c3 | Ionut Radu, Didier Landru, Gweltaz Gaudin, Gregory Riou, Catherine Tempesta, F. Letertre, Léa Di Cioccio, Pierric Gueguen, Thomas Signamarcheix, C. Euvrard, Jérôme Dechamp, Laurent Clavelier, Mariam Sadaka: Recent Developments of Cu-Cu non-thermo compression bonding for wafer-to-wafer 3D stacking. 3DIC 2010: 1-6 | |
| 2009 | ||
| c2 | Léa Di Cioccio, Pierric Gueguen, Rachid Taibi, Thomas Signamarcheix, Laurent Bally, Laurent Vandroux, Marc Zussy, Sophie Verrun, Jérôme Dechamp, Patrick Leduc, Myriam Assous, David Bouchu, François de Crecy, Laurent-Luc Chapelon, Laurent Clavelier: An innovative die to wafer 3D integration scheme: Die to wafer oxide or copper direct bonding with planarised oxide inter-die filling. 3DIC 2009: 1-4 | |
| c1 | Patrick Leduc, Myriam Assous, Léa Di Cioccio, Marc Zussy, Thomas Signamarcheix, Antonio Roman, Maxime Rousseau, Sophie Verrun, Laurent Bally, David Bouchu, Lionel Cadix, Alexis Farcy, Nicolas Sillon: First integration of Cu TSV using die-to-wafer direct bonding and planarization. 3DIC 2009: 1-5 | |
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