Maria Stangoni

Mauro Ciappa, Luigi Mangiacapra, Maria Stangoni, Stephan Ott, Wolfgang Fichtner: Design of optimum electron beam irradiation processes for the reliability of electric cables used in critical applications. Microelectronics Reliability 51(9-11): 1479-1483 (2011)

Mauro Ciappa, Luigi Mangiacapra, Maria Stangoni, Stephan Ott, Wolfgang Fichtner: Ensuring the reliability of electron beam crosslinked electric cables by the optimization of the dose depth distribution with Monte Carlo simulation. Microelectronics Reliability 49(9-11): 972-976 (2009)

Marco Buzzo, Mauro Ciappa, Maria Stangoni, Wolfgang Fichtner: Two-dimensional Dopant Profiling and Imaging of 4H Silicon Carbide Devices by Secondary Electron Potential Contrast. Microelectronics Reliability 45(9-11): 1499-1504 (2005)

Maria Stangoni, Mauro Ciappa, Wolfgang Fichtner: Assessment of the Analytical Capabilities of Scanning Capacitance and Scanning Spreading Resistance Microscopy Applied to Semiconductor Devices. Microelectronics Reliability 45(9-11): 1532-1537 (2005)

Maria Stangoni, Mauro Ciappa, Wolfgang Fichtner: A New Procedure to Define the Zero-Field Condition and to Delineate pn-Junctions in Silicon Devices by Scanning Capacitance Microscopy. Microelectronics Reliability 43(9-11): 1651-1656 (2003)

G. Mura, Massimo Vanzi, Maria Stangoni, Mauro Ciappa, Wolfgang Fichtner: On the behaviour of the selective iodine-based gold etch for the failure analysis of aged optoelectronic devices. Microelectronics Reliability 43(9-11): 1771-1776 (2003)

Maria Stangoni, Mauro Ciappa, Marco Buzzo, M. Leicht, Wolfgang Fichtner: Simulation and Experimental Validation of Scanning Capacitance Microscopy Measurements across Low-doped Epitaxial PN-Junction. Microelectronics Reliability 42(9-11): 1701-1706 (2002)