James H. Stathis

James H. Stathis, M. Wang, K. Zhao: Reliability of advanced high-k/metal-gate n-FET devices. Microelectronics Reliability 50(9-11): 1199-1202 (2010)

Aditya Bansal, Rahul M. Rao, Jae-Joon Kim, Sufi Zafar, James H. Stathis, Ching-Te Chuang: Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probability. Microelectronics Reliability 49(6): 642-649 (2009)

R. Pagano, Salvatore Lombardo, F. Palumbo, P. Kirsch, S. A. Krishnan, C. Young, R. Choi, G. Bersuker, James H. Stathis: A novel approach to characterization of progressive breakdown in high-k/metal gate stacks. Microelectronics Reliability 48(11-12): 1759-1764 (2008)

E. Amat, Rosana Rodríguez, M. Nafría, X. Aymerich, James H. Stathis: Influence of the SiO₂ layer thickness on the degradation of HfO₂/SiO₂ stacks subjected to static and dynamic stress conditions. Microelectronics Reliability 47(4-5): 544-547 (2007)

Javier Martín-Martínez, Rosana Rodríguez, M. Nafría, X. Aymerich, James H. Stathis: Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror. Microelectronics Reliability 47(4-5): 665-668 (2007)

James H. Stathis, Sufi Zafar: The negative bias temperature instability in MOS devices: A review. Microelectronics Reliability 46(2-4): 270-286 (2006)

James H. Stathis, Rosana Rodríguez, Barry P. Linder: Circuit implications of gate oxide breakdown. Microelectronics Reliability 43(8): 1193-1197 (2003)

James H. Stathis, Barry P. Linder, Rosana Rodríguez, Salvatore Lombardo: Reliability of ultra-thin oxides in CMOS circuits. Microelectronics Reliability 43(9-11): 1353-1360 (2003)

Rosana Rodríguez, James H. Stathis, Barry P. Linder, Rajiv V. Joshi, Ching-Te Chuang: Influence and model of gate oxide breakdown on CMOS inverters. Microelectronics Reliability 43(9-11): 1439-1444 (2003)

James H. Stathis: Reliability limits for the gate insulator in CMOS technology. IBM Journal of Research and Development 46(2-3): 265-286 (2002)

Rosana Rodríguez, James H. Stathis, Barry P. Linder, S. Kowalczyk, Ching-Te Chuang, Rajiv V. Joshi, Gregory A. Northrop, Kerry Bernstein, A. J. Bhavnagarwala, Salvatore Lombardo: Analysis of the effect of the gate oxide breakdown on SRAM stability. Microelectronics Reliability 42(9-11): 1445-1448 (2002)

Salvatore Lombardo, James H. Stathis, Barry P. Linder: Dependence of Post-Breakdown Conduction on Gate Oxide Thickness. Microelectronics Reliability 42(9-11): 1481-1484 (2002)