Nobuyuki Sugii

C. Dou, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, A. Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai: Resistive switching behavior of a CeO₂ based ReRAM cell incorporated with Si buffer layer. Microelectronics Reliability 52(4): 688-691 (2012)

M. Mamatrishat, T. Kubota, T. Seki, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Yoshinori Kataoka, A. Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai: Oxide and interface trap densities estimation in ultrathin W/La₂O₃/Si MOS capacitors. Microelectronics Reliability 52(6): 1039-1042 (2012)

Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, A. Nishiyama, Nobuyuki Sugii, Kazuo Tsutsui, Kenji Natori, Takeo Hattori, Hiroshi Iwai: (100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture. ESSDERC 2012: 89-92

D. Zade, Soshi Sato, Kuniyuki Kakushima, A. Srivastava, Parhat Ahmet, Kazuo Tsutsui, A. Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Chandan Kumar Sarkar, Hiroshi Iwai: Effects of La₂O₃ incorporation in HfO₂ gated nMOSFETs on low-frequency noise. Microelectronics Reliability 51(4): 746-750 (2011)

Kuniyuki Kakushima, K. Okamoto, T. Koyanagi, M. Kouda, Kiichi Tachi, Takamasa Kawanago, J. Song, Parhat Ahmet, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai: SrO capping effect for La₂O₃/Ce-silicate gate dielectrics. Microelectronics Reliability 50(3): 356-359 (2010)

Kuniyuki Kakushima, Kiichi Tachi, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai: Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La₂O₃ gate dielectrics. Microelectronics Reliability 50(6): 790-793 (2010)

Parhat Ahmet, Kentaro Nakagawa, Kuniyuki Kakushima, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai: Electrical characteristics of MOSFETs with La₂O₃/Y₂O₃ gate stack. Microelectronics Reliability 48(11-12): 1769-1771 (2008)