| 2006 | ||
|---|---|---|
| j1 | Hideaki Kurata, Shunichi Saeki, Takashi Kobayashi, Yoshitaka Sasago, Tsuyoshi Arigane, Keiichi Yoshida, Yoshinori Takase, Takayuki Yoshitake, Osamu Tsuchiya, Yoshinori Ikeda, Shunichi Narumi, Michitaro Kanamitsu, Kazuto Izawa, Kazunori Furusawa: A 130-nm CMOS 95-mm2 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming Throughput. IEICE Transactions 89-C(10): 1469-1479 (2006) | |
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