| 2007 | ||
|---|---|---|
| j2 | Hideaki Kurata, Satoshi Noda, Yoshitaka Sasago, Kazuo Otsuga, Tsuyoshi Arigane, Tetsufumi Kawamura, Takashi Kobayashi, Hitoshi Kume, Kazuki Homma, Teruhiko Ito, Yoshinori Sakamoto, Masahiro Shimizu, Yoshinori Ikeda, Osamu Tsuchiya, Kazunori Furusawa: A 126 mm2 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology. IEICE Transactions 90-C(11): 2146-2156 (2007) | |
| 2006 | ||
| j1 | Hideaki Kurata, Shunichi Saeki, Takashi Kobayashi, Yoshitaka Sasago, Tsuyoshi Arigane, Keiichi Yoshida, Yoshinori Takase, Takayuki Yoshitake, Osamu Tsuchiya, Yoshinori Ikeda, Shunichi Narumi, Michitaro Kanamitsu, Kazuto Izawa, Kazunori Furusawa: A 130-nm CMOS 95-mm2 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming Throughput. IEICE Transactions 89-C(10): 1469-1479 (2006) | |
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